公开(公告)号：US11990546B2

公开(公告)日：2024-05-21

申请号：US18120995

申请日：2023-03-13

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Hua Yang ,  Chih-Chien Chang ,  Shen-De Wang

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7816 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368

Abstract: A semiconductor device includes a semiconductor substrate, a gate structure, a source region, a drain region, a first oxide layer, a field plate, and a second oxide layer. The gate structure is disposed on the semiconductor substrate. The source region and the drain region are disposed in the semiconductor substrate and located at two opposite sides of the gate structure respectively. The first oxide layer includes a first portion disposed between the gate structure and the semiconductor substrate and a second portion disposed between the gate structure and the drain region. The field plate is partly disposed above the gate structure and partly disposed above the second portion of the first oxide layer. The second oxide layer includes a first portion disposed between the field plate and the gate structure and a second portion disposed between the field plate and the second portion of the first oxide layer.

公开(公告)号：US08937352B2

公开(公告)日：2015-01-20

申请号：US14181733

申请日：2014-02-17

Applicant: United Microelectronics Corp.

Inventor： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Chih-Wei Hsu ,  Po-Ching Chuang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368

Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.

Abstract translation: 植入层的布局图案至少包括线性区域和至少非线性区域。 线性区域包括容纳第一掺杂剂的多个第一图案，并且非线性区域包括多个第二图案以容纳第一掺杂剂。 线性区域邻接非线性区域。 此外，线性区域中的第一图案的图案密度小于非线性区域中的第二图案的图案密度。