公开(公告)号：US20140159155A1

公开(公告)日：2014-06-12

申请号：US14181733

申请日：2014-02-17

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Chih-Wei Hsu ,  Po-Ching Chuang

IPC: H01L29/78

CPC classification number: H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368

Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.

Abstract translation: 植入层的布局图案至少包括线性区域和至少非线性区域。 线性区域包括容纳第一掺杂剂的多个第一图案，并且非线性区域包括多个第二图案以容纳第一掺杂剂。 线性区域邻接非线性区域。 此外，线性区域中的第一图案的图案密度小于非线性区域中的第二图案的图案密度。

公开(公告)号：US10276652B1

公开(公告)日：2019-04-30

申请号：US16005652

申请日：2018-06-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Cheng-Hua Yang ,  Ke-Feng Lin ,  Ming-Tsung Lee ,  Shih-Teng Huang ,  Chih-Chung Wang ,  Chiu-Te Lee ,  Shu-Wen Lin

IPC: H01L29/06 ,  H01L29/872

Abstract: A schottky diode includes a schottky junction, an ohmic junction, a first isolation structure and a plurality of doped regions. The schottky junction includes a first well in a substrate and a first electrode contacting the first well. The ohmic junction includes a junction region in the first well and a second electrode contacting the junction region. The first isolation structure is disposed in the substrate and separates the schottky junction from the ohmic junction. The doped regions are located in the first well and under the schottky junction, wherein the doped regions separating from each other constitute a top-view profile of concentric circles.

公开(公告)号：US09224859B1

公开(公告)日：2015-12-29

申请号：US14590957

申请日：2015-01-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shih-Chieh Pu ,  Ming-Tsung Lee ,  Cheng-Hua Yang ,  Nien-Chung Li ,  Wen-Fang Lee ,  Chih-Chung Wang

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/772 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/7835

Abstract: A high voltage metal-oxide-semiconductor (HV MOS) device includes a substrate including a first conductivity type, a gate positioned on the substrate, a drain region formed in the substrate, the drain region including a second conductivity type, and a source region formed in the substrate, where the source region includes at least one first part and at least one second part, the first part includes the second conductivity type, the second part includes the first conductivity type, and the first conductivity type and the second conductivity type are complementary.

Abstract translation: 一种高电压金属氧化物半导体（HV MOS）器件包括：包括第一导电类型的衬底，位于衬底上的栅极，形成在衬底中的漏极区，包括第二导电类型的漏极区和源极区 形成在基板中，其中源区域包括至少一个第一部分和至少一个第二部分，第一部分包括第二导电类型，第二部分包括第一导电类型，第一导电类型和第二导电类型 是互补的

公开(公告)号：US08937352B2

公开(公告)日：2015-01-20

申请号：US14181733

申请日：2014-02-17

Applicant: United Microelectronics Corp.

Inventor： Ming-Tsung Lee ,  Cheng-Hua Yang ,  Wen-Fang Lee ,  Chih-Chung Wang ,  Chih-Wei Hsu ,  Po-Ching Chuang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423

CPC classification number: H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368

Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.

Abstract translation: 植入层的布局图案至少包括线性区域和至少非线性区域。 线性区域包括容纳第一掺杂剂的多个第一图案，并且非线性区域包括多个第二图案以容纳第一掺杂剂。 线性区域邻接非线性区域。 此外，线性区域中的第一图案的图案密度小于非线性区域中的第二图案的图案密度。