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1.发明申请HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND LAYOUT PATTERN THEREOF 有权高电压金属氧化物半导体晶体管器件及其布局图案公开(公告)号：US20140159155A1
公开(公告)日：2014-06-12
申请号：US14181733
申请日：2014-02-17
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Ming-Tsung Lee , Cheng-Hua Yang , Wen-Fang Lee , Chih-Chung Wang , Chih-Wei Hsu , Po-Ching Chuang
IPC: H01L29/78
CPC classification number: H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/402 , H01L29/404 , H01L29/42368
Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.
Abstract translation: 植入层的布局图案至少包括线性区域和至少非线性区域。 线性区域包括容纳第一掺杂剂的多个第一图案，并且非线性区域包括多个第二图案以容纳第一掺杂剂。 线性区域邻接非线性区域。 此外，线性区域中的第一图案的图案密度小于非线性区域中的第二图案的图案密度。
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2.发明授权High voltage metal-oxide-semiconductor transistor device and layout pattern thereof 有权高压金属氧化物半导体晶体管器件及其布局图案公开(公告)号：US08937352B2
公开(公告)日：2015-01-20
申请号：US14181733
申请日：2014-02-17
Applicant: United Microelectronics Corp.
Inventor： Ming-Tsung Lee , Cheng-Hua Yang , Wen-Fang Lee , Chih-Chung Wang , Chih-Wei Hsu , Po-Ching Chuang
IPC: H01L29/78 , H01L29/06 , H01L29/40 , H01L29/423
CPC classification number: H01L29/7816 , H01L29/0634 , H01L29/0696 , H01L29/402 , H01L29/404 , H01L29/42368
Abstract: A layout pattern of an implant layer includes at least a linear region and at least a non-linear region. The linear region includes a plurality of first patterns to accommodate first dopants and the non-linear region includes a plurality of second patterns to accommodate the first dopants. The linear region abuts the non-linear region. Furthermore, a pattern density of the first patterns in the linear region is smaller than a pattern density of the second patterns in the non-linear region.
Abstract translation: 植入层的布局图案至少包括线性区域和至少非线性区域。 线性区域包括容纳第一掺杂剂的多个第一图案，并且非线性区域包括多个第二图案以容纳第一掺杂剂。 线性区域邻接非线性区域。 此外，线性区域中的第一图案的图案密度小于非线性区域中的第二图案的图案密度。
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