公开(公告)号：US20220263012A1

公开(公告)日：2022-08-18

申请号：US17735094

申请日：2022-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yi-Ting Wu ,  Yan-Jou Chen ,  Cheng-Tung Huang ,  Jen-Yu Wang ,  Po-Chun Yang ,  Yung-Ching Hsieh ,  Jian-Jhong Chen ,  Bo-Chang Li

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22

Abstract: A memory device includes a substrate; an active area extending along a first direction on the substrate; a gate line traversing the active area and extending along a second direction that is not parallel to the first direction; a source doped region in the active area and on a first side of the gate line; a main source line extending along the first direction; a source line extension coupled to the main source line and extending along the second direction; a drain doped region in the active area and on a second side of the gate line that is opposite to the first side; and a data storage element electrically coupled to the drain doped region. The main source line is electrically connected to the source doped region via the source line extension.

公开(公告)号：US11171137B2

公开(公告)日：2021-11-09

申请号：US16594054

申请日：2019-10-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L21/8238 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423 ,  H01L29/165 ,  H01L27/092 ,  H01L27/02

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.

公开(公告)号：US20190006360A1

公开(公告)日：2019-01-03

申请号：US15660970

申请日：2017-07-27

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yen-Wei Tung ,  Jen-Yu Wang ,  Cheng-Tung Huang ,  Yan-Jou Chen

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/3213 ,  H01L21/762 ,  H01L21/02 ,  H01L29/06 ,  H01L27/02

Abstract: A method for fabricating semiconductor device includes the steps of: forming a first fin-shaped structure on a substrate; forming a first single diffusion break (SDB) structure in the first fin-shaped structure; forming a first gate structure on the first SDB structure and a second gate structure on the first fin-shaped structure; forming an interlayer dielectric (ILD) layer around the first gate structure and the second gate structure; forming a patterned mask on the first gate structure; and performing a replacement metal gate (RMG) process to transform the second gate structure into a metal gate.