公开(公告)号：US20160334208A1

公开(公告)日：2016-11-17

申请号：US14737475

申请日：2015-06-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： En-Chiuan Liou ,  Yu-Cheng Tung ,  Yi-Jing Wang

IPC: G01B11/26

CPC classification number: G03F7/70633

Abstract: The present invention provides an overlay mark information, including at least a pair of first overlay mark patterns disposed in a first layer, each first overlay mark pattern consisting of a plurality of first mark units arranged along a first direction, where each first mark unit includes at least one first pattern and at least one second pattern, and the dimension of the first pattern is different from the dimension of the second pattern. The overlay mark information also includes at least a pair of second overlay patterns disposed in the first layer, each second overlay mark pattern consisting of a plurality of second mark units arranged along the first direction, where the pattern of each first mark unit is the same as the pattern of each second mark unit after 180 degrees rotated.

Abstract translation: 本发明提供一种重叠标记信息，其包括设置在第一层中的至少一对第一覆盖标记图案，每个第一覆盖标记图案由沿着第一方向布置的多个第一标记单元组成，其中每个第一标记单元包括 至少一个第一图案和至少一个第二图案，并且所述第一图案的尺寸不同于所述第二图案的尺寸。 覆盖标记信息还包括设置在第一层中的至少一对第二覆盖图案，每个第二覆盖标记图案由沿着第一方向布置的多个第二标记单元组成，其中每个第一标记单元的图案是相同的 作为180度旋转后的每个第二标记单元的图案。

公开(公告)号：US20150294058A1

公开(公告)日：2015-10-15

申请号：US14278296

申请日：2014-05-15

Applicant: United Microelectronics Corp.

Inventor： En-Chiuan Liou ,  Yu-Ying Huang ,  Jen-Hsiu Li ,  Mei-Chen Chen ,  Ya-Ling Chen ,  Yi-Jing Wang ,  Chi-Ming Huang

IPC: G06F17/50 ,  H01L21/033

CPC classification number: H01L21/0334 ,  H01L21/0337 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.

Abstract translation: 在本公开中，提供了一种标记分割方法及其制造应用该半导体结构的方法。 标记分割方法包括以下步骤。 首先，通过处理器识别具有宽度WS并且由形成在基板上的空间SS彼此分离的多个段。 此后，处理器在片段上设置多个标记。 该步骤包括：（1）处理器调整每一个标记的宽度WM等于m（WS + SS）+ WS或m（WS + SS）+ SS，其中m是整数; 和（2）由处理器调整相邻两个标记的空格SM，使得WM + SM = n（WS + SS），其中n是整数。