公开(公告)号：US20160032443A1

公开(公告)日：2016-02-04

申请号：US14880148

申请日：2015-10-09

Applicant: University of Electronic Science and Technology of China

Inventor： Deen Gu ,  Tao Wang ,  Yadong Jiang

IPC: C23C14/08 ,  H01B1/02 ,  C23C14/34 ,  C23C14/35 ,  C23C14/00

CPC classification number: C23C14/083 ,  C01G31/02 ,  C23C14/0036 ,  C23C14/3464 ,  C23C14/35 ,  C23C14/352 ,  C23C14/58 ,  C23C14/5853 ,  H01B1/02

Abstract: A vanadium oxide thermo-sensitive film material with a high temperature coefficient of resistance (TCR) contains a rare earth element of Yttrium serving as a dopant in a preparation process. The vanadium oxide thermo-sensitive film material includes a substrate and a yttrium-doped vanadium oxide film layer. The yttrium-doped vanadium oxide film layer includes three elements of vanadium, oxygen and yttrium, wherein the atomic concentration of yttrium is at a range of 1%-8%, the atomic concentration of vanadium is at a range of 20-40% and the residue is oxygen. The method for preparing the vanadium oxide thermo-sensitive film material with high TCR includes a reactive magnetron sputtering method using a low-concentration yttrium-vanadium alloy target as a sputtering source or a reactive magnetron co-sputtering method using dual targets including a high-concentration yttrium-vanadium alloy target and a pure vanadium target as a co-sputtering source.