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公开(公告)号：US09897881B2
公开(公告)日：2018-02-20
申请号：US14902551
申请日：2015-09-23
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Gui Chen , Caiqin Chen
IPC: H01L27/12 , G02F1/1368 , G02F1/1362 , G02F1/1343 , H01L29/786
CPC classification number: G02F1/1368 , G02F1/134309 , G02F1/13439 , G02F1/136209 , G02F1/136227 , G02F1/136286 , G02F2001/13685 , G02F2201/121 , G02F2201/123 , G02F2201/40 , G02F2202/104 , H01L29/78633
Abstract: The present invention provides a thin film transistor array substrate and a liquid crystal display panel. The thin film transistor array substrate comprises: a substrate; a light shielding layer, located at a middle part on a surface of the substrate; a buffer layer, covering the light shielding layer; a Low Temperature Poly-silicon layer, being located on the buffer layer, and corresponding to the light shielding layer; an isolation layer, covering the Low Temperature Poly-silicon layer, and the isolation layer comprises a through hole, wherein a width of the through hole is smaller than a width of the light shielding layer; a metal layer, located on the isolation layer, and the metal layer is connected with the Low Temperature Poly-silicon layer via the through hole. The thin film transistor array substrate and the liquid crystal display panel have a higher aperture ratio.
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公开(公告)号：US09760206B2
公开(公告)日：2017-09-12
申请号：US14759281
申请日：2015-04-27
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Gui Chen , Jingfeng Xue
CPC classification number: G06F3/0416 , G02F1/13338 , G06F3/0412 , G06F3/044 , G06F2203/04108 , G06F2203/04111
Abstract: A self-capacitive touch panel structure includes a touch detection chip and multiple self-capacitance electrodes which are isolated with each other and arranged as a matrix. Each self-capacitance electrode is connected with the touch detection chip through a connection line, each self-capacitance electrode is connected with a corresponding connection line through at least one via hole. Wherein, for a same column of the multiple self-capacitance electrodes and according to a sequence of gradually far away from the touch detection chip, a cross-sectional area of a connection line connected with a following self-capacitance electrode is larger than a cross-sectional area of a connection line connected with a previous self-capacitance electrode such that resistance values of the connection lines connected between the self-capacitance electrodes and the touch detection chip are approximately equal. An in-cell touch panel and a liquid crystal display including above structure are also disclosed.
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公开(公告)号：US20170256651A1
公开(公告)日：2017-09-07
申请号：US14912610
申请日：2016-01-29
Inventor： Gui Chen , Qiang Gong
IPC: H01L29/786 , H01L29/49 , H01L27/12
CPC classification number: H01L29/78696 , H01L27/1222 , H01L27/127 , H01L29/4908 , H01L29/78621 , H01L29/78678
Abstract: The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LTPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.
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公开(公告)号：US20170102811A1
公开(公告)日：2017-04-13
申请号：US14778310
申请日：2015-04-23
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd , Wuhan China Star Optoelectronics Technology Co., Ltd
Inventor： Gui Chen , Jingfeng Xue , Shibo Zhou
CPC classification number: G06F3/0416 , G02F1/13338 , G02F1/136286 , G06F3/044 , G06F2203/04111
Abstract: A touch panel and a display device are disclosed. The present disclosure relates to the technical field of display, whereby the technical problem of mura of the touch panel can be solved. In the touch panel, each first signal line, after being electrically connected with a corresponding touch electrode, further extends to one end of the touch panel far from the driving circuit, so that each touch electrode overlaps with a group of first signal lines that are connected with the column of touch electrodes including said touch electrode. The touch panel according to the present disclosure can be used in liquid crystal television, liquid crystal display device, mobile phone, tablet personal computer and other display devices.
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15.发明授权公开(公告)号：US10345946B2
公开(公告)日：2019-07-09
申请号：US14778310
申请日：2015-04-23
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Gui Chen , Jingfeng Xue , Shibo Zhou
IPC: G06F3/045 , G06F3/041 , G06F3/044 , G02F1/1333 , G02F1/1362
Abstract: The present disclosure relates to the technical field of display, whereby the technical problem of mura of the touch panel can be solved. In the touch panel, each first signal line, after being electrically connected with a corresponding touch electrode, further extends to one end of the touch panel far from the driving circuit, so that each touch electrode overlaps with a group of first signal lines that are connected with the column of touch electrodes including the touch electrode. The touch panel according to the present disclosure can be used in liquid crystal television, liquid crystal display device, mobile phone, tablet personal computer and other display devices.
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Patent Agency Ranking
公开(公告)号：US09977560B2
公开(公告)日：2018-05-22
申请号：US14904760
申请日：2015-09-28
Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
Inventor： Gui Chen , Caiqin Chen
IPC: G06F3/047 , G06F3/041 , G02F1/1333
CPC classification number: G06F3/047 , G02F1/1333 , G02F1/13338 , G06F3/0412 , G06F3/0416 , G06F3/044
Abstract: The present invention provides a touch control structure, comprising a touch control zone, and the touch control zone comprises touch control units and first lead wires corresponding to the touch control units, and the touch control units are arranged in array having a plurality of column of the touch control units, and the touch control units of each column are aligned in spaces from top to bottom in the touch control structure, and the first lead wires sequentially penetrate the touch control units in each column from top to bottom in the touch control structure, and the first lead wire is electrically coupled to one touch control unit, and is disconnected with the next touch control unit, which is adjacent to the touch control unit in the same column and close to the top of the touch control structure.
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公开(公告)号：US20180090625A1
公开(公告)日：2018-03-29
申请号：US15829970
申请日：2017-12-03
Inventor： Gui Chen , Qiang Gong
IPC: H01L29/786 , H01L27/12 , H01L29/49
Abstract: The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LIPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.
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公开(公告)号：US09876120B2
公开(公告)日：2018-01-23
申请号：US14912610
申请日：2016-01-29
Inventor： Gui Chen , Qiang Gong
IPC: H01L29/78 , H01L29/786 , H01L27/12 , H01L29/49
CPC classification number: H01L29/78696 , H01L27/1222 , H01L27/127 , H01L29/4908 , H01L29/78621 , H01L29/78678
Abstract: The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LTPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.
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公开(公告)号：US10749037B2
公开(公告)日：2020-08-18
申请号：US15829970
申请日：2017-12-03
Inventor： Gui Chen , Qiang Gong
IPC: H01L29/78 , H01L29/786 , H01L27/12 , H01L29/49
Abstract: The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LIPS TFT substrate of the present invention includes a metal layer formed on a channel zone so that the metal layer, a source electrode, and a drain electrode can be used as a mask to form LDD zones in a poly-silicon layer in order to save the mask needed for separately forming the LDD zones; further, due to the addition of the metal layer that is connected to the channel zone of the poly-silicon layer, the electrical resistance of the channel zone can be effectively reduced to increase a TFT on-state current. The LTPS TFT substrate manufacturing method of the present invention forms a metal layer on a channel zone at the same time of forming a source electrode and a drain electrode and uses the metal layer, the source electrode, and the drain electrode as a mask to form LDD zones in a poly-silicon layer so as to save the mask needed for separately forming the LDD zones thereby reducing the manufacturing cost and increasing throughput.
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公开(公告)号：US10180611B2
公开(公告)日：2019-01-15
申请号：US14780332
申请日：2015-08-13
Inventor： Gui Chen , Jingfeng Xue
IPC: G09G3/36 , G06F3/041 , G02F1/1333 , G02F1/1335 , G02F1/1343 , G02F1/1345 , G02F1/1362 , G02F1/1368
Abstract: A liquid crystal display panel and a thin film transistor array substrate are provided. The thin film transistor array substrate includes a pixel area and a fan-out area. The fan-out area has a groove. The thin film transistor array substrate has a substrate, a light shielding layer, a buffer layer, a poly-silicon layer, a first insulating layer, a scan line layer, a second insulating layer, a data line layer, a third insulating layer, a common line layer, a touch-sensing line layer, a fourth insulating layer, and a pixel electrode layer. The present invention can prevent wire shorts.
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