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公开(公告)号:US11172131B1
公开(公告)日:2021-11-09
申请号:US16915739
申请日:2020-06-29
Applicant: Western Digital Technologies, Inc.
Inventor: Quang Le , Rajeev Nagabhirava , Kuok San Ho , Zhigang Bai , Zhanjie Li , Xiaoyong Liu , Daniele Mauri
Abstract: Aspects of the present disclosure generally relate to optical devices and related methods that facilitate tilt in camera systems, such as tilt of a lens. In one example, an optical device includes a lens, an image sensor disposed below the lens, a plurality of magnets disposed about the lens, and a plurality of: (1) vertical coil structures coiled in one or more vertical planes and (2) horizontal coil structures coiled in one or more horizontal planes. When power is applied, the coil structures can generate magnetic fields that, in the presence of the magnets, cause relative movement of the coil structures and associated structures. The plurality of vertical coil structures are configured to horizontally move the lens. The plurality of horizontal coil structures are configured to tilt the lens when differing electrical power is applied to at least two of the plurality of horizontal coil structures.
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公开(公告)号:US11170803B1
公开(公告)日:2021-11-09
申请号:US16783057
申请日:2020-02-05
Applicant: Western Digital Technologies, Inc.
Inventor: Xiaoyong Liu , Quang Le , Hongquan Jiang , Guangli Liu , Jui-lung Li
Abstract: A magnetic recording write head includes a spin torque oscillator (STO) between a seed layer disposed on a write pole and trailing shield. The seed layer has a cross-track width greater than the width of the STO and a depth in a direction orthogonal to the disk-facing surface of the write pole greater than the depth of the STO. A first insulating refill layer is formed on the sides of the seed layer and STO, and a second insulating refill layer in contact with the first refill layer has a thermal conductivity greater than that of the first refill layer. When current is passing through the STO, the seed layer spreads the current to reduce heating of the write pole and STO, and the bilayer refill material facilitates the transfer of heat away from the write pole and STO.
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13.
公开(公告)号:US20190279662A1
公开(公告)日:2019-09-12
申请号:US15607604
申请日:2017-05-29
Applicant: Western Digital Technologies, Inc.
Inventor: Xiaoyong Liu , Quang Le , Hongquan Jiang , Guangli Liu , Jui-Lung Li
Abstract: A magnetic recording write head includes a spin torque oscillator (STO) between the write pole and trailing shield and an extended seed layer on the write pole beneath the STO. The seed layer has a cross-track width greater than the width of the STO and a depth in a direction orthogonal to the disk-facing surface of the write pole greater than the depth of the STO. A first insulating refill layer is formed on the sides of the extended seed layer and STO and a second insulating refill layer in contact with the first refill layer has a thermal conductivity greater than that of the first refill layer. When current is passing through the STO the extended seed layer spreads the current to reduce heating of the write pole and STO and the bilayer refill material facilitates the transfer of heat away from the write pole and STO.
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公开(公告)号:US10311901B1
公开(公告)日:2019-06-04
申请号:US15992488
申请日:2018-05-30
Applicant: Western Digital Technologies, Inc.
Inventor: Quang Le , Hongquan Jiang , Yongchul Ahn , Alexander M. Zeltser
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic read head. The magnetic read head includes an antiferromagnetic layer recessed from the MFS, a reference layer disposed over the antiferromagnetic layer, a free layer disposed over the reference layer, and a thermally conductive structure disposed over the reference layer. The thermally conductive structure is recessed from the MFS. The thermally conductive structure includes a first portion and a second portion. The first portion of the thermally conductive structure extends from the second portion of the thermally conductive structure towards the MFS. The first portion of the thermally conductive structure is aligned with the free layer in a stripe height direction. With the thermally conductive structure, thermal stabilization of the read head is achieved.
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15.
公开(公告)号:US10157632B1
公开(公告)日:2018-12-18
申请号:US15631932
申请日:2017-06-23
Applicant: Western Digital Technologies, Inc.
Inventor: Suping Song , Zhanjie Li , Michael Kuok San Ho , Quang Le , Alexander M. Zeltser
Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole, a heavy metal structure surrounding at least a portion of the main pole at a media facing surface (MFS), and two magnetic structures sandwiching the heavy metal structure. Spin-orbit torque (SOT) is generated from the heavy metal structure, inducing magnetization switching (or precession) in the magnetic structures. The SOT reduces the magnetic flux shunting from the main pole to the trailing shield, and the magnetization switching sharpens the write field profile in the cross-track direction. The SOT based head with the magnetic structures sandwiching the heavy metal structure increases both track density (tracks per inch) and linear density (bit per inch), which in turn increases the areal density capability (ADC), which is the product of tracks per inch and bit per inch.
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公开(公告)号:US12176132B2
公开(公告)日:2024-12-24
申请号:US17855045
申请日:2022-06-30
Applicant: Western Digital Technologies, Inc.
Inventor: Quang Le , Brian R. York , Cherngye Hwang , Xiaoyong Liu , Michael A. Gribelyuk , Xiaoyu Xu , Randy G. Simmons , Kuok San Ho , Hisashi Takano
IPC: H01F10/32 , C23C8/12 , C30B29/52 , G11B5/00 , G11B5/39 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/01 , H10N52/80
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
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公开(公告)号:US11908496B2
公开(公告)日:2024-02-20
申请号:US18082721
申请日:2022-12-16
Applicant: Western Digital Technologies, Inc.
Inventor: Quang Le , Brian R. York , Cherngye Hwang , Susumu Okamura , Xiaoyong Liu , Kuok San Ho , Hisashi Takano
CPC classification number: G11B5/3909 , G11B5/313 , G11B5/314 , G11C11/161 , H01F10/329 , H01F10/3254 , H10B61/00 , H10N50/85 , H10N52/00 , H10N52/80 , G11B5/39
Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.
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公开(公告)号:US11776567B2
公开(公告)日:2023-10-03
申请号:US17395306
申请日:2021-08-05
Applicant: Western Digital Technologies, Inc.
Inventor: Cherngye Hwang , Xiaoyong Liu , Quang Le , Kuok San Ho , Hisashi Takano , Brian R. York
Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).
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公开(公告)号:US11514930B1
公开(公告)日:2022-11-29
申请号:US17359132
申请日:2021-06-25
Applicant: Western Digital Technologies, Inc.
Inventor: Quang Le , Hongquan Jiang , Hisashi Takano , Cherngye Hwang
Abstract: The present disclosure generally relates to magnetic storage devices, such as magnetic tape drives, comprising a read head. The read head comprises a plurality of read sensors disposed between a lower shield and an upper shield. A plurality of soft bias side shields are disposed adjacent to and outwardly of the plurality of read sensors in a cross-track direction. A plurality of hard bias side shields are disposed on and in contact with the soft bias side shields to stabilize the soft bias side shields. Each of the plurality of soft bias side shields are spaced a first distance from the lower shield and each of the hard bias side shields are spaced a second distance from the upper shield, the first distance being substantially equal to the second distance.
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公开(公告)号:US11489108B2
公开(公告)日:2022-11-01
申请号:US16861118
申请日:2020-04-28
Applicant: Western Digital Technologies, Inc.
Inventor: Quang Le , Cherngye Hwang , Brian R. York , Andrew Chen , Thao A. Nguyen , Yongchul Ahn , Xiaoyong Liu , Hongquan Jiang , Zheng Gao , Kuok San Ho
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
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