公开(公告)号：US20240365685A1

公开(公告)日：2024-10-31

申请号：US18771255

申请日：2024-07-12

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Shy-Jay LIN ,  Mingyuan SONG

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10B61/22 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

Abstract: A spin-orbit-torque (SOT) magnetic device includes a bottom metal layer, a first magnetic layer, as a magnetic free layer, disposed over the bottom metal layer, a spacer layer disposed over the first magnetic layer, and a second magnetic layer disposed over the spacer layer. The first magnetic layer includes a lower magnetic layer, a middle layer made of non-magnetic layer and an upper magnetic layer.

公开(公告)号：US20240071450A1

公开(公告)日：2024-02-29

申请号：US18257161

申请日：2021-12-16

Applicant: Commissariat à l'énergie atomique et aux énergies alternatives ,  THALES ,  Centre national de la recherche scientifique ,  UNIVERSITE GRENOBLE ALPES

Inventor： Jean-Philippe ATTANE ,  Laurent VILA ,  Manuel BIBES

IPC: G11C11/16 ,  G11C19/08 ,  H10B61/00 ,  H10N50/80 ,  H10N52/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C19/0808 ,  H10B61/00 ,  H10N50/80 ,  H10N52/00

Abstract: A device for modifying at least the direction of magnetization of a magnetic layer, the modifying device including a ferroelectric layer having a ferroelectric polarization, arranged on or under the magnetic layer so as to define a stack including at least the magnetic layer and the ferroelectric layer, a generator apt to inject an electric current into the stack along a direction parallel to the plane of the layers of the stack, and a modification unit apt to modify the ferroelectric polarization of the ferroelectric layer, for modifying, with the generator, the direction of magnetization of the magnetic layer.

公开(公告)号：US20240047314A1

公开(公告)日：2024-02-08

申请号：US18490815

申请日：2023-10-20

Applicant: Allegro MicroSystems, LLC

Inventor： Robert A. Briano ,  Shixi Louis Liu

IPC: H01L23/495 ,  H01L23/31 ,  H10N52/00 ,  G01R15/20 ,  G01R19/00

CPC classification number: H01L23/49541 ,  H01L23/3107 ,  H10N52/00 ,  G01R15/202 ,  G01R19/0092 ,  H01L2224/48245 ,  H01L24/48

Abstract: A current sensor integrated circuit package includes a primary conductor having an input portion and an output portion, both with reduced area edges. Secondary leads each have an exposed portion and an elongated portion that is offset with respect to the exposed portion. A semiconductor die is disposed adjacent to the primary conductor on an insulator portion and at least one magnetic field sensing element is supported by the semiconductor die. A package body includes a first portion enclosing the semiconductor die and a portion of the primary conductor and a second portion enclosing the elongated portion of the plurality of secondary leads. The first package body portion has a first width configured to expose the input and output portions of the primary conductor and the second package body portion has a second width between a first and second package body side edges that is larger than the first width.

公开(公告)号：US11730065B2

公开(公告)日：2023-08-15

申请号：US17359822

申请日：2021-06-28

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Byong Guk Park ,  Min-Gu Kang ,  Jong-Guk Choi

IPC: G11C11/00 ,  H10N52/80 ,  G11C11/18 ,  G11C11/16 ,  H10B61/00 ,  H10N52/00

CPC classification number: H10N52/80 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/18 ,  H10B61/00 ,  H10N52/00

Abstract: Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.

公开(公告)号：US11694713B2

公开(公告)日：2023-07-04

申请号：US17100199

申请日：2020-11-20

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang Le ,  Cherngye Hwang ,  Brian R. York ,  Thao A. Nguyen ,  Zheng Gao ,  Kuok San Ho ,  Pham Nam Hai

IPC: G11B5/11 ,  H01F10/32 ,  G11B5/147 ,  H10N50/85 ,  H10N52/80 ,  H10B61/00 ,  H10N52/00 ,  G11B5/00

CPC classification number: G11B5/11 ,  G11B5/147 ,  H01F10/329 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80 ,  G11B2005/0024

Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.

公开(公告)号：US12096700B2

公开(公告)日：2024-09-17

申请号：US16909718

申请日：2020-06-23

Applicant: IMEC vzw

Inventor： Sebastien Couet ,  Van Dai Nguyen

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

CPC classification number: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

Abstract: The disclosed technology relates generally to magnetic devices, and more particularly to magnetic memory and/or logic devices. In an aspect, a spintronic device comprises a tunnel barrier, a storage layer provided on the tunnel barrier, and a seed layer provided on the storage layer. The storage layer includes a first magnetic layer having a first crystallographic orientation provided on the tunnel barrier, a spacer layer provided on the first magnetic layer, a second magnetic layer having a second crystallographic orientation provided on the spacer layer and exchange coupled to the first magnetic layer, an antiferromagnetic coupling layer provided on the second magnetic layer, and a third magnetic layer having the second crystallographic orientation provided on the antiferromagnetic coupling layer and antiferromagnetically coupled to the second magnetic layer.

公开(公告)号：US12035638B2

公开(公告)日：2024-07-09

申请号：US17463716

申请日：2021-09-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki

IPC: H10N52/80 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/00

CPC classification number: H10N52/80 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10 ,  H10N52/00 ,  G11C11/165 ,  H10N50/85

Abstract: A magnetoresistance effect element includes: a laminate in which a first ferromagnetic layer, a non-magnetic layer, and a second ferromagnetic layer are laminated in order in a first direction; a magnetic body that is present on the second ferromagnetic layer or above the second ferromagnetic layer of the laminate; and a wiring that is in contact with a first side surface of the magnetic body and extends in a second direction crossing the first direction. The thickness of the second ferromagnetic layer in the first direction is thinner than the minimum length of the second ferromagnetic layer in a plane orthogonal to the first direction. The thickness of the magnetic body in the first direction is thicker than the minimum length of the magnetic body in a plane orthogonal to the first direction.

公开(公告)号：US11991933B2

公开(公告)日：2024-05-21

申请号：US17161317

申请日：2021-01-28

Applicant: BEIHANG UNIVERSITY

Inventor： Weisheng Zhao ,  Daoqian Zhu ,  Zongxia Guo ,  Kaihua Cao ,  Shouzhong Peng

IPC: H10N52/00 ,  H10B61/00 ,  H10N50/85 ,  H10N52/80

CPC classification number: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

Abstract: The present disclosure provides a magnetic random-access memory, comprising: an antiferromagnetic layer; a magnetic tunnel junction disposed on the antiferromagnetic layer and comprising a ferromagnetic layer disposed corresponding to the antiferromagnetic layer; wherein the ferromagnetic layer of the magnetic tunnel junction has in-plane magnetic anisotropy, and an exchange bias field is formed between the antiferromagnetic layer and the ferromagnetic layer by an annealing process. A direction of the exchange bias field is changed by a spin orbit torque, thereby changing a direction of a magnetic moment of the ferromagnetic layer and realizing data writing. The present disclosure can improve a thermal stability of the i-MTJ and reduce a lateral dimension of the i-MTJ, thereby improving a storage density of the magnetic memory.

公开(公告)号：US11968910B2

公开(公告)日：2024-04-23

申请号：US17500971

申请日：2021-10-14

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Hung-Chan Lin ,  Yu-Ping Wang ,  Chien-Ting Lin

IPC: H10N52/01 ,  H10B61/00 ,  H10N52/00 ,  H10N52/80

CPC classification number: H10N52/01 ,  H10B61/00 ,  H10N52/00 ,  H10N52/80

Abstract: A method for fabricating a semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, forming an etch stop layer on the MTJ stack, forming a first spin orbit torque (SOT) layer on the etch stop layer, and then patterning the first SOT layer, the etch stop layer, and the MTJ stack to form a MTJ.

公开(公告)号：US11922986B2

公开(公告)日：2024-03-05

申请号：US17645215

申请日：2021-12-20

Applicant: SHAN DONG UNIVERSITY

Inventor： Shishen Yan ,  Yufeng Tian ,  Lihui Bai ,  Yibo Fan ,  Xiang Han

IPC: G11C11/16 ,  G11C11/18 ,  G11C11/56 ,  H01F10/32 ,  H03K19/18 ,  H03K19/20 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80

CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3268 ,  H03K19/18 ,  H10N50/85 ,  H10N52/00 ,  H10N52/80 ,  H03K19/20

Abstract: The present invention relates to a kind of magnetic heterojunction structure and the method of controlling and achieving spin logic and multiple-state storage functions. The said single magnetic heterojunction structure comprises the substrate, in-plane anti-ferromagnetic layer, in-plane ferromagnetic layer, nonmagnetic layer, vertical ferromagnetic layer, and vertical anti-ferromagnetic layer respectively from the bottom up; the said in-plane ferromagnetic layer and the said vertical ferromagnetic layer are coupled together through the said nonmagnetic layer in the middle; in-plane exchange biases, namely exchange biases in the plane, exist between the said in-plane ferromagnetic layer and the said in-plane anti-ferromagnetic layer, and out-of-plane exchange biases, namely exchange biases out of the plane, exist between the said vertical ferromagnetic layer and the said vertical anti-ferromagnetic layer.