公开(公告)号：US06455399B2

公开(公告)日：2002-09-24

申请号：US09808661

申请日：2001-03-14

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L2178

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254

摘要： In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombardment of the face of the wafer by means of ions creating in the volume of the wafer at a depth close to the average penetration depth of the ions, where a layer of gaseous microbubbles defines the volume of the wafer a lower region constituting a majority of the substrate and an upper region constituting the thin film. A temperature of the wafer during implantation is kept below the temperature at which the gas produced by the implanted ions can escape from the semiconductor by diffusion. The process also includes contacting the planar face of the wafer with a stiffener constituted by at least one rigid material layer. The process includes treating the assembly of the wafer and the stiffener at a temperature above that at which the ion bombardment takes place and adequate to create by a crystalline rearrangement effect in the wafer and a pressure effect in the microbubbles to create separation between the thin film and the majority of the substrate. The stiffener and the planar face of the wafer are kept in intimate contact during the stage to free the thin film from the majority of the substrate. The method also includes applying a combination of thermal treatment and an etchant to the thin film to reduce a surface roughness of the thin film to a predetermined value.

摘要翻译： 在具体实施方案中，本发明提供了用于使分离的膜的表面平滑的新方法。 本方法用于制备薄的半导体材料薄膜。 该方法包括通过离子轰击晶片表面的离子轰击的步骤，该离子在晶片的体积中以接近离子的平均穿透深度的深度产生离子，其中一层气体微泡限定了 所述晶片构成所述基板的大部分的下部区域和构成所述薄膜的上部区域。 植入时晶片的温度保持在由注入的离子产生的气体通过扩散从半导体中逸出的温度以下。 该方法还包括使晶片的平面与由至少一个刚性材料层构成的加强件相接触。 该方法包括在高于离子轰击发生的温度下处理晶片和加强件的组件，并且足以通过晶片中的晶体重排效应产生并且在微泡中产生压力效应以在薄膜之间形成分离 和大部分的底物。 在阶段期间，晶片的加强件和平面保持紧密接触，以从基板的大部分释放薄膜。 该方法还包括将热处理和蚀刻剂的组合应用于薄膜以将薄膜的表面粗糙度减小到预定值。

公开(公告)号：US06204151B1

公开(公告)日：2001-03-20

申请号：US09295822

申请日：1999-04-12

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L2178

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254

摘要： In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombardment of the face of the wafer by means of ions creating in the volume of the wafer at a depth close to the average penetration depth of the ions, where a layer of gaseous microbubbles defines the volume of the wafer a lower region constituting a majority of the substrate and an upper region constituting the thin film. A temperature of the wafer during implantation is kept below the temperature at which the gas produced by the implanted ions can escape from the semiconductor by diffusion. The process also includes contacting the planar face of the wafer with a stiffener constituted by at least one rigid material layer. The process includes treating the assembly of the wafer and the stiffener at a temperature above that at which the ion bombardment takes place and adequate to create by a crystalline rearrangement effect in the wafer and a pressure effect in the microbubbles to create separation between the thin film and the majority of the substrate. The stiffener and the planar face of the wafer are kept in intimate contact during the stage to free the thin film from the majority of the substrate. The method also includes applying a combination of thermal treatment and an etchant to the thin film to reduce a surface roughness of the thin film to a predetermined value.

摘要翻译： 在具体实施方案中，本发明提供了用于使分离的膜的表面平滑的新方法。 本方法用于制备薄的半导体材料薄膜。 该方法包括通过离子轰击晶片表面的离子轰击的步骤，该离子在晶片的体积中以接近离子的平均穿透深度的深度产生离子，其中一层气体微泡限定了 所述晶片构成所述基板的大部分的下部区域和构成所述薄膜的上部区域。 植入时晶片的温度保持在由注入的离子产生的气体通过扩散从半导体中逸出的温度以下。 该方法还包括使晶片的平面与由至少一个刚性材料层构成的加强件相接触。 该方法包括在高于离子轰击发生的温度下处理晶片和加强件的组件，并且足以通过晶片中的晶体重排效应产生并且在微泡中产生压力效应以在薄膜之间形成分离 和大部分的底物。 在阶段期间，晶片的加强件和平面保持紧密接触，以从基板的大部分释放薄膜。 该方法还包括将热处理和蚀刻剂的组合应用于薄膜以将薄膜的表面粗糙度减小到预定值。

公开(公告)号：US07595499B2

公开(公告)日：2009-09-29

申请号：US12070574

申请日：2008-02-19

申请人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

发明人： Francois J. Henley ,  Philip James Ong ,  Igor J. Malik ,  Harry R. Kirk

IPC分类号： H01L29/06 ,  H01L31/072 ,  H01L31/0336 ,  H01L31/0328

CPC分类号： H01L21/302 ,  H01L21/2007 ,  Y10T29/41

摘要： A method for forming a strained layer of semiconductor material, e.g., silicon, germanium, Group III/V, silicon germanium alloy. The method includes providing a non-deformable surface region having a first predetermined radius of curvature, which is defined by R(1) and is defined normal to the surface region. The method includes providing a first substrate (e.g., silicon wafer) having a first thickness. Preferably, the first substrate has a face, a backside, and a cleave plane defined within the first thickness. The method includes a step of overlying the backside of the first substrate on a portion of the surface region having the predetermined radius of curvature to cause a first bend within the thickness of material to form a first strain within a portion of the first thickness. The method provides a second substrate having a second thickness, which has a face and a backside. The method includes a step of overlying the face of the second substrate on a portion of the face of the first substrate to cause a second bend within the thickness of material to form a second strain within a portion of the second thickness. A step of joining the face of the second substrate to the face of the first substrate form a sandwich structure while maintaining the first bend in the first substrate and the second bend in the second substrate. Preferably, joining occurs using a low temperature process such as plasma activated bonding or the like.

摘要翻译： 一种用于形成半导体材料的应变层的方法，例如硅，锗，III / V族，硅锗合金。 该方法包括提供具有第一预定曲率半径的不可变形表面区域，其由R（1）限定并且与该表面区域垂直地限定。 该方法包括提供具有第一厚度的第一衬底（例如，硅晶片）。 优选地，第一衬底具有限定在第一厚度内的面，背面和解理面。 该方法包括在具有预定曲率半径的表面区域的一部分上覆盖第一基底的背面以使材料厚度内的第一弯曲在第一厚度的一部分内形成第一应变的步骤。 该方法提供具有第二厚度的第二基底，其具有面和背面。 该方法包括在第一基板的表面的一部分上覆盖第二基板的表面以在材料厚度内引起第二弯曲以在第二厚度的一部分内形成第二应变的步骤。 将第二基板的表面接合到第一基板的表面的步骤形成夹层结构，同时保持第一基板中的第一弯曲并且在第二基板中保持第二弯曲。 优选地，使用诸如等离子体激活键合等的低温工艺进行接合。

公开(公告)号：US06881644B2

公开(公告)日：2005-04-19

申请号：US10150483

申请日：2002-05-17

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/00

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其上具有多孔硅层。 基底可以具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中以将表面粗糙度值降低大约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06448152B1

公开(公告)日：2002-09-10

申请号：US09906865

申请日：2001-07-16

申请人： Francois J. Henley ,  Sien G. Kang ,  Igor J. Malik

发明人： Francois J. Henley ,  Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  G05B2219/32024 ,  G05B2219/45031

摘要： A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.

摘要翻译： 一种用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法。 例如，制造具有不同硅层厚度的多个施主晶片以及具有不同氧化物层厚度的多个处理晶片。 随后，客户可以订购共享定义参数的绝缘体上硅（SOI）晶圆。 因此，根据客户定义的参数选择预制的供体晶片和处理晶片，然后结合在一起。 接下来，施主晶片从手柄晶片切割，其中处理晶片保持施主晶片的硅层。 可以改变处理晶片的硅层厚度以满足客户的参数。 例如，外延平滑处理可以减小硅层厚度，而外延增厚工艺可以增加硅层厚度。

公开(公告)号：US06391219B1

公开(公告)日：2002-05-21

申请号：US09364209

申请日：1999-07-30

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2176

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其上具有多孔硅层。 基底可以具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中以将表面粗糙度值降低大约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06287941B1

公开(公告)日：2001-09-11

申请号：US09399985

申请日：1999-09-20

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2130

CPC分类号： H01L21/3065 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/967

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in an etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其特征在于预定的表面粗糙度值。 衬底还具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中，以将预定的表面粗糙度值减小约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06221774B1

公开(公告)日：2001-04-24

申请号：US09286259

申请日：1999-04-05

申请人： Igor J. Malik

发明人： Igor J. Malik

IPC分类号： H01L2120

CPC分类号： H01L21/67046 ,  B24B37/105

摘要： A polishing pad (24) is rotated about an axis parallel to a surface (10) of a semiconductor wafer (12). The polishing pad (24) is supported by a roller (22) that receives fluid (38) and distributes the fluid through the polishing pad (24) across the surface of the wafer. The surface (10) of the wafer is moved in relation to the polishing pad so that the wafer surface is smoothed, or touch-polished, with or without the use of abrasive slurry. In one embodiment the wafer is rotated between an upper roller assembly (20) and a lower roller assembly (14). In another embodiment, the polishing pad is held at an angle to the surface of the wafer to remove a ridge of material from a donor wafer for re-use in a thin film transfer process.

摘要翻译： 抛光垫（24）围绕平行于半导体晶片（12）的表面（10）的轴线旋转。 抛光垫（24）由接收流体（38）的辊（22）支撑并且通过抛光垫（24）将流体分布在晶片的表面上。 晶片的表面（10）相对于抛光垫移动，以便在或不使用磨料浆料的情况下使晶片表面平滑或触摸抛光。 在一个实施例中，晶片在上辊组件（20）和下辊组件（14）之间旋转。 在另一个实施例中，抛光垫与晶片的表面保持一定角度以从施主晶片去除材料脊，以在薄膜转移过程中重新使用。