公开(公告)号：US07253081B2

公开(公告)日：2007-08-07

申请号：US09893340

申请日：2001-06-26

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L21/30

CPC分类号： H01L21/3065 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/967

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in an etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

公开(公告)号：US06969668B1

公开(公告)日：2005-11-29

申请号：US09710628

申请日：2000-11-08

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/46 ,  H01L21/311 ,  H01L21/11

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S148/012

摘要： A method of fabricating substrates, e.g., bulk wafers, silicon on insulator wafers, silicon on saphire, optoelectronic substrates. The method includes providing a substrate (e.g., silicon, gallium arsenide, gallium nitride, quartz). The substrate has a film characterized by a non-uniform surface, which includes a plurality of defects. At least some of the defects are of a size ranging from about 100 Angstroms and greater. The method also includes applying a combination of a deposition species for deposition of a deposition material and an etching species for etching etchable material. The combination of the deposition species and the etching species contact the non-uniform surface in a thermal setting to reduce a level of non-uniformity of the non-uniform surface by filling a portion of the defects to smooth the film of material. The smoothed film of material is substantially free from the defects and is characterized by a surface roughness of a predetermined value.

摘要翻译： 一种制造衬底的方法，例如体晶片，绝缘体上硅晶片，硅片上的硅片，光电衬底。 该方法包括提供衬底（例如，硅，砷化镓，氮化镓，石英）。 基板具有由不均匀的表面表征的膜，其包括多个缺陷。 至少一些缺陷的尺寸范围为约100埃或更大。 该方法还包括应用用于沉积沉积材料的沉积物质和用于蚀刻可蚀刻材料的蚀刻物质的组合。 沉积物质和蚀刻物质的组合在热定形中接触非均匀表面，以通过填充一部分缺陷来平滑材料膜来降低不均匀表面的不均匀度。 平滑的材料膜基本上没有缺陷，其特征在于具有预定值的表面粗糙度。

公开(公告)号：US06171965B2

公开(公告)日：2001-01-09

申请号：US09295858

申请日：1999-04-21

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L21311

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S148/012

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其特征在于预定的表面粗糙度值。 衬底还具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在带有蚀刻剂的环境中，以将预定的表面粗糙度值降低约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US08187377B2

公开(公告)日：2012-05-29

申请号：US10264393

申请日：2002-10-04

申请人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

发明人： Igor J. Malik ,  Sien G. Kang ,  Martin Fuerfanger ,  Harry Kirk ,  Ariel Flat ,  Michael Ira Current ,  Philip James Ong

IPC分类号： C30B33/00

CPC分类号： H01L21/3065 ,  C30B33/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02658

摘要： The present invention provides for treating a surface of a semiconductor material. The method comprises exposing the surface of the semiconductor material to a halogen etchant in a hydrogen environment at an elevated temperature. The method controls the surface roughness of the semiconductor material. The method also has the unexpected benefit of reducing dislocations in the semiconductor material.

摘要翻译： 本发明提供用于处理半导体材料的表面。 该方法包括在高温下在氢气环境中将半导体材料的表面暴露于卤素蚀刻剂。 该方法控制半导体材料的表面粗糙度。 该方法还具有减少半导体材料中位错的意想不到的好处。

公开(公告)号：US06455399B2

公开(公告)日：2002-09-24

申请号：US09808661

申请日：2001-03-14

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L2178

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254

摘要： In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombardment of the face of the wafer by means of ions creating in the volume of the wafer at a depth close to the average penetration depth of the ions, where a layer of gaseous microbubbles defines the volume of the wafer a lower region constituting a majority of the substrate and an upper region constituting the thin film. A temperature of the wafer during implantation is kept below the temperature at which the gas produced by the implanted ions can escape from the semiconductor by diffusion. The process also includes contacting the planar face of the wafer with a stiffener constituted by at least one rigid material layer. The process includes treating the assembly of the wafer and the stiffener at a temperature above that at which the ion bombardment takes place and adequate to create by a crystalline rearrangement effect in the wafer and a pressure effect in the microbubbles to create separation between the thin film and the majority of the substrate. The stiffener and the planar face of the wafer are kept in intimate contact during the stage to free the thin film from the majority of the substrate. The method also includes applying a combination of thermal treatment and an etchant to the thin film to reduce a surface roughness of the thin film to a predetermined value.

摘要翻译： 在具体实施方案中，本发明提供了用于使分离的膜的表面平滑的新方法。 本方法用于制备薄的半导体材料薄膜。 该方法包括通过离子轰击晶片表面的离子轰击的步骤，该离子在晶片的体积中以接近离子的平均穿透深度的深度产生离子，其中一层气体微泡限定了 所述晶片构成所述基板的大部分的下部区域和构成所述薄膜的上部区域。 植入时晶片的温度保持在由注入的离子产生的气体通过扩散从半导体中逸出的温度以下。 该方法还包括使晶片的平面与由至少一个刚性材料层构成的加强件相接触。 该方法包括在高于离子轰击发生的温度下处理晶片和加强件的组件，并且足以通过晶片中的晶体重排效应产生并且在微泡中产生压力效应以在薄膜之间形成分离 和大部分的底物。 在阶段期间，晶片的加强件和平面保持紧密接触，以从基板的大部分释放薄膜。 该方法还包括将热处理和蚀刻剂的组合应用于薄膜以将薄膜的表面粗糙度减小到预定值。

公开(公告)号：US06204151B1

公开(公告)日：2001-03-20

申请号：US09295822

申请日：1999-04-12

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L2178

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254

摘要： In a specific embodiment, the present invention provides a novel process for smoothing a surface of a separated film. The present process is for the preparation of thin semiconductor material films. The process includes a step of implanting by ion bombardment of the face of the wafer by means of ions creating in the volume of the wafer at a depth close to the average penetration depth of the ions, where a layer of gaseous microbubbles defines the volume of the wafer a lower region constituting a majority of the substrate and an upper region constituting the thin film. A temperature of the wafer during implantation is kept below the temperature at which the gas produced by the implanted ions can escape from the semiconductor by diffusion. The process also includes contacting the planar face of the wafer with a stiffener constituted by at least one rigid material layer. The process includes treating the assembly of the wafer and the stiffener at a temperature above that at which the ion bombardment takes place and adequate to create by a crystalline rearrangement effect in the wafer and a pressure effect in the microbubbles to create separation between the thin film and the majority of the substrate. The stiffener and the planar face of the wafer are kept in intimate contact during the stage to free the thin film from the majority of the substrate. The method also includes applying a combination of thermal treatment and an etchant to the thin film to reduce a surface roughness of the thin film to a predetermined value.

摘要翻译： 在具体实施方案中，本发明提供了用于使分离的膜的表面平滑的新方法。 本方法用于制备薄的半导体材料薄膜。 该方法包括通过离子轰击晶片表面的离子轰击的步骤，该离子在晶片的体积中以接近离子的平均穿透深度的深度产生离子，其中一层气体微泡限定了 所述晶片构成所述基板的大部分的下部区域和构成所述薄膜的上部区域。 植入时晶片的温度保持在由注入的离子产生的气体通过扩散从半导体中逸出的温度以下。 该方法还包括使晶片的平面与由至少一个刚性材料层构成的加强件相接触。 该方法包括在高于离子轰击发生的温度下处理晶片和加强件的组件，并且足以通过晶片中的晶体重排效应产生并且在微泡中产生压力效应以在薄膜之间形成分离 和大部分的底物。 在阶段期间，晶片的加强件和平面保持紧密接触，以从基板的大部分释放薄膜。 该方法还包括将热处理和蚀刻剂的组合应用于薄膜以将薄膜的表面粗糙度减小到预定值。

公开(公告)号：US06881644B2

公开(公告)日：2005-04-19

申请号：US10150483

申请日：2002-05-17

申请人： Igor J. Malik ,  Sien G. Kang

发明人： Igor J. Malik ,  Sien G. Kang

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/762 ,  H01L21/00

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其上具有多孔硅层。 基底可以具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中以将表面粗糙度值降低大约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06448152B1

公开(公告)日：2002-09-10

申请号：US09906865

申请日：2001-07-16

申请人： Francois J. Henley ,  Sien G. Kang ,  Igor J. Malik

发明人： Francois J. Henley ,  Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2130

CPC分类号： H01L21/76254 ,  G05B2219/32024 ,  G05B2219/45031

摘要： A method for generating a plurality of donor wafers and handle wafers prior to an order being placed by a customer. For example, a plurality of donor wafers with different silicon layer thicknesses along with a plurality of handle wafers with different oxide layer thicknesses are fabricated. Subsequently, a customer may place an order for silicon-on-insulator (SOI) wafers which share defined parameters. Therefore, a prefabricated donor wafer and handle wafer are selected based on the customer's defined parameters and then bonded together. Next, the donor wafer is cleaved from the handle wafer wherein the handle wafer retains the silicon layer of the donor wafer. The silicon layer thickness of the handle wafer may be altered to meet the customer's parameters. For example, an epitaxial smoothing process may decrease the silicon layer thickness while an epitaxial thickening process may increase the silicon layer thickness.

摘要翻译： 一种用于在订单由客户放置之前产生多个供体晶片并处理晶片的方法。 例如，制造具有不同硅层厚度的多个施主晶片以及具有不同氧化物层厚度的多个处理晶片。 随后，客户可以订购共享定义参数的绝缘体上硅（SOI）晶圆。 因此，根据客户定义的参数选择预制的供体晶片和处理晶片，然后结合在一起。 接下来，施主晶片从手柄晶片切割，其中处理晶片保持施主晶片的硅层。 可以改变处理晶片的硅层厚度以满足客户的参数。 例如，外延平滑处理可以减小硅层厚度，而外延增厚工艺可以增加硅层厚度。

公开(公告)号：US06391219B1

公开(公告)日：2002-05-21

申请号：US09364209

申请日：1999-07-30

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2176

CPC分类号： H01L21/76259 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/76254 ,  Y10S438/96 ,  Y10S438/977

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其上具有多孔硅层。 基底可以具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中以将表面粗糙度值降低大约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。

公开(公告)号：US06287941B1

公开(公告)日：2001-09-11

申请号：US09399985

申请日：1999-09-20

申请人： Sien G. Kang ,  Igor J. Malik

发明人： Sien G. Kang ,  Igor J. Malik

IPC分类号： H01L2130

CPC分类号： H01L21/3065 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/967

摘要： A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which is characterized by a predetermined surface roughness value. The substrate also has a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in an etchant bearing environment to reduce the predetermined surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.

摘要翻译： 一种用于处理材料膜的方法，其可以限定在诸如硅的衬底上。 该方法包括提供包含切割表面的基底，其特征在于预定的表面粗糙度值。 衬底还具有从切割表面限定到所述切割表面下方的区域的含氢颗粒的分布。 该方法还包括将切割的表面的温度升高到大约1000摄氏度，同时将蚀刻的表面保持在有蚀刻剂的环境中，以将预定的表面粗糙度值减小约百分之五十以上。 优选地，取决于实施例，该值可以减少大约八十或九十个百分比和更大。