公开(公告)号：US10068654B2

公开(公告)日：2018-09-04

申请号：US15391969

申请日：2016-12-28

Applicant: Winbond Electronics Corp.

Inventor： Robin John Jigour ,  Hui Chen ,  Oron Michael

IPC: G11C16/26 ,  G11C29/04 ,  G06F11/10 ,  G11C16/34 ,  G11C16/20 ,  G06F3/06 ,  G11C29/52

CPC classification number: G11C16/26 ,  G06F3/0619 ,  G06F3/064 ,  G06F3/0656 ,  G06F3/0679 ,  G06F11/1068 ,  G11C16/20 ,  G11C16/3404 ,  G11C29/04 ,  G11C29/52 ,  G11C2029/0411

Abstract: Serial NAND flash memory may be provided with the characteristics of continuous read of the memory across page boundaries and from logically contiguous memory locations without wait intervals, while also being clock-compatible with the high performance serial flash NOR (“HPSF-NOR”) memory read commands so that the serial NAND flash memory may be used with controllers designed for HPSF-NOR memory. Serial NAND flash memory having these compatibilities is referred to herein as high-performance serial flash NAND (“SPSF-NAND”) memory. Since devices and systems which use HPSF-NOR memories and controllers often have extreme space limitations, HPSF-NAND may also be provided with the same physical attributes of low pin count and small package size of HPSF-NOR memory for further compatibility. HPSF-NAND memory is particularly suitable for code shadow applications, even while enjoying the low “cost per bit” and low per bit power consumption of a NAND memory array at higher densities.