摘要:
A method for reducing an organic solvent remaining in tris-(2,3-epoxypropyl)-isocyanurate crystals, which comprises pulverizing crystal particles of tris-(2,3-epoxypropyl)-isocyanurate while evaporating a volatile component from the surface of the particles.
摘要:
A 2,3-epoxypropyl derivative or a 2-methyl-2,3-epoxypropyl derivative of a compound having carboxyl groups or amido groups is produced as a purified product having an epoxide equivalent of 1.0 to 1.1 times the theoretical epoxide equivalent of the derivative, an ionic halogen content of 10 ppm or less, transparency when molten and a stability against increase in the epoxide equivalent when stored at 150.degree. C. for 24 hours, by a process comprising steps (A) reacting 1.2 to 60 mol of an epihalohydrin or a 2-methyl-epihalohydrin with 1 mol of active hydrogen atoms of the carboxyl or amido group of the compound in the presence of a particular catalyst, thereby forming a reaction product containing a 2-hydroxy-3-halopropyl derivative or a 2-hydroxy-2-methyl-3-halopropyl derivative, (B) dehydrohalogenating the derivative by adding to the reaction product a sufficient amount of an alkali metal hydroxide thereby forming a final slurry containing the 2,3-epoxypropyl derivative of the 2-methyl-2,3-epoxypropyl derivative and the alkali metal halide, (C) washing the final slurry or a liquid product formed by removing the alkali metal halide from the final slurry thereby forming a refined liquid containing the derivative, and (D) removing by evaporation the epihalohydrin or the 2-methyl-epihalohidrin from the refined liquid, thereby forming the 2,3-epoxypropyl derivative or the 2-methyl-2,3-epoxypropyl derivative as the purified product.
摘要:
There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable substance and a photopolymerization initiator.
摘要:
There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable substance and a photopolymerization initiator.
摘要:
A process for producing β-form tris-(2,3-epoxypropyl)-isocyanurate crystals containing from 2 to 15 wt % of α-form tris-(2,3-epoxypropyl)-isocyanurate in the interior of the crystals, which comprises the following steps (A), (B), (C) and (D): (A) a step of reacting cyanuric acid with epichlorohydrin to form an addition product of cyanuric acid and epichlorohydrin, followed by dehydrochlorination to obtain a reaction solution containing tris-(2,3-epoxypropyl)-isocyanurate, (B) a step of removing epichlorohydrin from the reaction solution containing tris-(2,3-epoxypropyl)-isocyanurate obtained in step (A), and dissolving the obtained tris-(2,3-epoxypropyl)-isocyanurate in a solvent, (C) a step of gradually cooling the liquid obtained in step (B) at a cooling rate within 20° C./hr for crystallization, followed by filtration to obtain crystals, and (D) a step of washing and drying the crystals obtained in step (C).
摘要:
A method for reducing organic solvents remaining in tris-(2,3-epoxypropyl)-isocyanurate crystals, which comprises pulverizing, as a material, crystal particles of tris-(2,3-epoxypropyl)-isocyanurate obtained by a recrystallization method, while evaporating a volatile component from the surface of the particles.
摘要:
Optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate is obtained by a method of reacting isocyanuric acid with an optically active epihalohydrin, or a method of optically resolving a racemic modification of tris-(2,3-epoxypropyl)-isocyanurate by using an amylose or cellulose derivative. It is a method for producing a high melting point type tris-(2,3-epoxypropyl)-isocyanurate obtained by mixing two enantiomers of optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate.
摘要:
An epoxy/acid anhydride composition characterized by containing, as a curing accelerator, a substituted triazine of the formula [I] ##STR1## (wherein X is an amino group, C.sub.1-18 monoalkylamino group, di C.sub.1-18 alkylamino group, morpholino group, piperidino group, methyl group or phenyl group; R.sup.1 and R.sup.2 independently each represent C.sub.1-12 alkyl group, C.sub.1-12 hydroxyalkyl group, C.sub.4-8 cycloalkyl group, C.sub.5-9 cycloalkylmethyl group or C.sub.5-9 methylcycloalkyl group) in an epoxy/acid anhydride composition in which an epoxy compound and an acid anhydride-curing agent are contained, and an epoxy/acid anhydride resin composition prepared by thermosetting the epoxy/acid anhydride composition.