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    Optically active epoxy compound
    1.
    发明授权
    Optically active epoxy compound 有权
    光学活性环氧化合物

    公开(公告)号：US06444814B1

    公开(公告)日：2002-09-03

    申请号：US09622895

    申请日：2000-08-31

    申请人： Hisao Ikeda ,  Motohiko Hidaka ,  Atsumi Aoki

    发明人： Hisao Ikeda ,  Motohiko Hidaka ,  Atsumi Aoki

    IPC分类号： C07D2132

    CPC分类号： C07D405/14

    摘要： Optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate is obtained by a method of reacting isocyanuric acid with an optically active epihalohydrin, or a method of optically resolving a racemic modification of tris-(2,3-epoxypropyl)-isocyanurate by using an amylose or cellulose derivative. It is a method for producing a high melting point type tris-(2,3-epoxypropyl)-isocyanurate obtained by mixing two enantiomers of optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate.

    摘要翻译： 通过使异氰尿酸与光学活性表卤代醇反应的方法得到光学活性β型三 - （2,3-环氧丙基） - 异氰脲酸酯，或光学拆分三 - （2,3-环氧丙基） - 异氰脲酸酯，通过使用直链淀粉或纤维素衍生物。 它是通过混合光学活性β-型三（2,3-环氧丙基） - 异氰脲酸酯的两种对映异构体得到的高熔点型三 - （2,3-环氧丙基） - 异氰脲酸酯的制备方法。

    Optically active epoxy compound
    3.
    发明授权
    Optically active epoxy compound 有权

    公开(公告)号：US06605717B2

    公开(公告)日：2003-08-12

    申请号：US10118260

    申请日：2002-04-09

    申请人： Hisao Ikeda ,  Motohiko Hidaka ,  Atsumi Aoki

    发明人： Hisao Ikeda ,  Motohiko Hidaka ,  Atsumi Aoki

    IPC分类号： C07D25110

    CPC分类号： C07D405/14

    摘要： Optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate is obtained by a method of reacting isocyanuric acid with an optically active epihalohydrin, or a method of optically resolving a racemic modification of tris-(2,3-epoxypropyl)-isocyanurate by using an amylose or cellulose derivative. It is a method for producing a high melting point type tris-(2,3-epoxypropyl)-isocyanurate obtained by mixing two enantiomers of optically active &bgr;-type tris-(2,3-epoxypropyl)-isocyanurate.

    Manufacturing method for semiconductor integrated circuit device
    5.
    发明授权
    Manufacturing method for semiconductor integrated circuit device 失效
    半导体集成电路器件的制造方法

    公开(公告)号：US5512502A

    公开(公告)日：1996-04-30

    申请号：US396786

    申请日：1995-03-01

    申请人： Fumio Ootsuka ,  Yusuke Nonaka ,  Atsumi Aoki

    发明人： Fumio Ootsuka ,  Yusuke Nonaka ,  Atsumi Aoki

    IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L21/265

    CPC分类号： H01L21/823835 ,  H01L21/28052 ,  Y10S148/147

    摘要： In forming a MISFET having a salicide structure, a polysilicon film forming a gate electrode in the MISFET is constructed of a first silicon film having a high n-type impurity concentration on the side of a gate insulating film and a second silicon film having a low n-type impurity concentration on the surface side of the gate electrode. Further, a Ti film is deposited on the second silicon film. The Ti film and the second silicon film are annealed twice at proper different temperatures to thereby promote a silicide reaction and form a low-resistance silicide layer in the second silicon film.

    摘要翻译： 在形成具有硅化物结构的MISFET时，在MISFET中形成栅电极的多晶硅膜由在栅极绝缘膜一侧具有高n型杂质浓度的第一硅膜和具有低的栅极绝缘膜的第二硅膜构成 n型杂质浓度在栅电极的表面侧。 此外，在第二硅膜上沉积Ti膜。 Ti膜和第二硅膜在合适的不同温度下退火两次，从而促进硅化物反应，并在第二硅膜中形成低电阻硅化物层。

    Method of manufacturing semiconductor IC using selective poly and EPI silicon growth
    6.
    发明授权
    Method of manufacturing semiconductor IC using selective poly and EPI silicon growth 失效
    使用选择性聚和EPI硅生长制造半导体IC的方法

    公开(公告)号：US5234845A

    公开(公告)日：1993-08-10

    申请号：US859789

    申请日：1992-03-30

    申请人： Atsumi Aoki ,  Hizuru Yamaguchi ,  Nobuo Owada

    发明人： Atsumi Aoki ,  Hizuru Yamaguchi ,  Nobuo Owada

    IPC分类号： H01L21/205 ,  H01L21/285 ,  H01L21/316 ,  H01L21/331 ,  H01L21/76 ,  H01L29/10 ,  H01L29/732

    CPC分类号： H01L29/66287 ,  H01L21/28525 ,  H01L29/1004 ,  H01L29/732 ,  Y10S438/969

    摘要： Herein disclosed is an improved bipolar transistor manufacturing method which adopts an EBT (Epitaxial Base Transistor) structure using an SPESG (Selective Poly-and-Epitaxial-Silicon Growth) technique. Specifically, the method of manufacturing a bipolar transistor according to the present invention comprises the steps of: forming an isolation oxide layer to enclose an active region of a single crystal semiconductor substrate and to have a lower surface than that of the substrate of said active region; simultaneously forming a single crystal silicon layer over the substrate surface of said active region and a polycrystal silicon layer to become integral with said single crystal silicon layer over the surface of said isolation oxide layer by simultaneously growing silicon films over the substrate surface of said active region and the surface of said isolation oxide layer; and forming an active region of a semiconductor element in said single crystal silicon layer.

    摘要翻译： 本文公开了一种改进的双极晶体管制造方法，其采用使用SPESG（_Selectial _Poly-and-_Piaxial-_Silicon _Growth）技术的EBT（_Epitaxial _Base _Transistor）结构。 具体地，根据本发明的制造双极晶体管的方法包括以下步骤：形成隔离氧化物层以包围单晶半导体衬底的有源区并具有比所述有源区的衬底的表面更低的表面 ; 同时在所述有源区的衬底表面上形成单晶硅层和多晶硅层，以在所述隔离氧化物层的表面上与所述单晶硅层成一体，通过在所述有源区的衬底表面上同时生长硅膜 和所述隔离氧化物层的表面; 以及在所述单晶硅层中形成半导体元件的有源区。