Guide wire
    12.
    发明授权
    Guide wire 有权
    导丝

    公开(公告)号:US08187206B2

    公开(公告)日:2012-05-29

    申请号:US12048664

    申请日:2008-03-14

    IPC分类号: A61B5/00 A61M25/00

    摘要: A guide wire includes a member with a core wire. The guide wire may have a marker-forming layer which partly encircles the outer surface of the member and differs in color from the member, and a coating layer which covers the marker-forming layer and the member at least in the region where the marker-forming layer is formed and has such transparency as to make the marker-forming layer visible. The marker-forming layer and the coating layer can be formed from mutually miscible resins, while the marker-forming layer functions as a visible marker.

    摘要翻译: 引导线包括具有芯线的部件。 导丝线可以具有部分地包围构件的外表面并且与构件颜色不同的标记形成层,以及至少在标记形成层的区域中覆盖标记形成层和构件的涂层, 形成层,并且具有使标记形成层可见的透明性。 标记形成层和涂层可以由相互混溶的树脂形成,而标记形成层用作可见标记。

    Optical pickup having thermal expansion compensation
    13.
    发明授权
    Optical pickup having thermal expansion compensation 失效
    具有热膨胀补偿的光学拾取器

    公开(公告)号:US08087038B2

    公开(公告)日:2011-12-27

    申请号:US11668034

    申请日:2007-01-29

    IPC分类号: G11B7/135

    摘要: An aspect of the invention provides an optical pickup in which an optical axis is not displaced even if ambient temperature is changed. The optical pickup of the invention has an optical unit and an optical pickup case. The optical unit has a lens member having an optical axis, and the optical axis of the lens member is offset to one side from the center of the optical unit. The optical pickup case holds the optical unit from both sides. A thermal expansion amount of the optical unit is absorbed by compression amounts of a first adhesive and a second adhesive such that the optical axis of the lens member is not displaced when the optical unit is thermal expanded.

    摘要翻译: 本发明的一个方面提供了一种光学拾取器,其中光轴即使环境温度改变也不会移动。 本发明的光拾取器具有光学单元和光拾取盒。 光学单元具有具有光轴的透镜构件,透镜构件的光轴偏离光学单元的中心一侧。 光拾取器盒从两侧保持光学单元。 光学单元的热膨胀量被第一粘合剂和第二粘合剂的压缩量吸收,使得当光学单元热膨胀时透镜构件的光轴不移位。

    Guide Wire
    14.
    发明申请
    Guide Wire 有权
    导丝

    公开(公告)号:US20080281230A1

    公开(公告)日:2008-11-13

    申请号:US12116685

    申请日:2008-05-07

    IPC分类号: A61M25/09

    摘要: A guide wire includes a wire body having a core wire and a resin coating layer covering an outer periphery of a distal section of the wire body, and an annular member provided on the proximal side of the resin coating layer. The outer diameter of the distal end of the annular member and the outer diameter of the proximal end of the resin coating layer are preferably equal, and a distal end face of the annular member is joined to a proximal end face of the resin coating layer.

    摘要翻译: 导线包括具有芯线的线体和覆盖线体的远端部分的外周的树脂涂层以及设置在树脂涂层的近侧的环形构件。 环状构件的前端的外径和树脂被覆层的近端的外径优选相等,并且环状构件的前端面与树脂被覆层的基端面接合。

    OPTICAL PICKUP
    15.
    发明申请

    公开(公告)号:US20080189726A1

    公开(公告)日:2008-08-07

    申请号:US11668034

    申请日:2007-01-29

    IPC分类号: G11B7/00

    摘要: An aspect of the invention provides an optical pickup in which an optical axis is not displaced even if ambient temperature is changed. The optical pickup of the invention has an optical unit and an optical pickup case. The optical unit has a lens member having an optical axis, and the optical axis of the lens member is offset to one side from the center of the optical unit. The optical pickup case holds the optical unit from both sides. A thermal expansion amount of the optical unit is absorbed by compression amounts of a first adhesive and a second adhesive such that the optical axis of the lens member is not displaced when the optical unit is thermal expanded.

    摘要翻译: 本发明的一个方面提供了一种光学拾取器,其中光轴即使环境温度改变也不会移动。 本发明的光拾取器具有光学单元和光拾取盒。 光学单元具有具有光轴的透镜构件,透镜构件的光轴偏离光学单元的中心一侧。 光拾取器盒从两侧保持光学单元。 光学单元的热膨胀量被第一粘合剂和第二粘合剂的压缩量吸收,使得当光学单元热膨胀时透镜构件的光轴不移位。

    LSI test socket for BGA
    17.
    发明申请
    LSI test socket for BGA 失效
    用于BGA的LSI测试插座

    公开(公告)号:US20070018667A1

    公开(公告)日:2007-01-25

    申请号:US11527538

    申请日:2006-09-27

    申请人: Yasushi Kinoshita

    发明人: Yasushi Kinoshita

    IPC分类号: G01R31/02

    摘要: There is provided an LSI socket containing a pogo-pin type decoupling capacitor for reducing the potential fluctuation of power supplies and GNDs at the time of testing LSI incorporated in a BGA package. The LSI socket comprises a printed board 102 containing decoupling capacitors 113 corresponding to one or more power supply voltages inside thereof, a pogo-pin supporting casing portion 104 on which the printed board 102 is overlapped into a single piece, and pogo-pins 103 inserted into penetrating holes in which hole positions of through holes 109 drilled in the printed board 102 and casing holes 114 drilled in the pogo-pin supporting casing portion 104 are allowed to be matched, wherein the printed board 102 is disposed on the upper surface side of the pogo-pin supporting casing portion 104 which faces the BGA package, or disposed on the lower surface side of the pogo-pin supporting casing portion 104, at the time of testing the LSI incorporated in the BGA package.

    摘要翻译: 提供了一种LSI插座,其包含用于在测试包含在BGA封装中的LSI时降低电源和GND的电位波动的pogo-pin型去耦电容器。 LSI插座包括:印刷电路板102,其包含对应于其内部的一个或多个电源电压的去耦电容器113;印刷电路板102重叠成单件的弹簧销支撑壳体部分104和插入的弹簧销103 能够匹配在印刷基板102上钻孔的贯通孔109的孔位置和在弹簧销支撑壳体部分104中钻出的壳体孔114的贯通孔,其中印刷基板102配置在 在测试包含在BGA封装中的LSI时,面向BGA封装的pogo-pin支撑壳体部分104或者布置在pogo-pin支撑壳体部分104的下表面侧上。

    Semiconductor device with high-speed switching circuit implemented by MIS transistors and process for fabrication thereof
    20.
    发明授权
    Semiconductor device with high-speed switching circuit implemented by MIS transistors and process for fabrication thereof 失效
    具有由MIS晶体管实现的高速开关电路的半导体器件及其制造方法

    公开(公告)号:US06531746B2

    公开(公告)日:2003-03-11

    申请号:US09725271

    申请日:2000-11-29

    申请人: Yasushi Kinoshita

    发明人: Yasushi Kinoshita

    IPC分类号: H01L2972

    CPC分类号: H01L27/0629

    摘要: An n-channel type MIS field effect transistor is fabricated on a p-type well defined in a standard p-type silicon substrate, and is expected to respond to a high-frequency signal, wherein a heavily-doped p-type well contact region is formed outside of the p-type well for increasing the substrate resistance, and a capacitor is coupled to the heavily-doped p-type well contact region for increasing the impedance so that the insertion loss is reduced by virtue of the large impedance of the silicon substrate.

    摘要翻译: n沟道型MIS场效应晶体管制造在标准p型硅衬底中限定的p型阱上,并且预期对高频信号做出响应,其中重掺杂p型阱接触区域 形成在p型阱的外部以增加衬底电阻,并且电容器耦合到重掺杂的p型阱接触区域,以增加阻抗,从而借助于阻抗的大阻抗来减小插入损耗 硅衬底。