公开(公告)号：US20080291307A1

公开(公告)日：2008-11-27

申请号：US12123707

申请日：2008-05-20

申请人： Yuki Honda ,  Masakazu Namba ,  Yoshiyuki Hirano ,  Saburo Okazaki ,  Norifumi Egami ,  Toshihisa Watabe ,  Yoshiro Takiguchi ,  Akira Kobayashi ,  Shigeo Itoh ,  Masateru Taniguchi ,  Kazuhito Nakamura ,  Kenta Miya ,  Yoshiyuki Okuda ,  Kazuto Sakemura

发明人： Yuki Honda ,  Masakazu Namba ,  Yoshiyuki Hirano ,  Saburo Okazaki ,  Norifumi Egami ,  Toshihisa Watabe ,  Yoshiro Takiguchi ,  Akira Kobayashi ,  Shigeo Itoh ,  Masateru Taniguchi ,  Kazuhito Nakamura ,  Kenta Miya ,  Yoshiyuki Okuda ,  Kazuto Sakemura

IPC分类号： H04N5/335

CPC分类号： H04N5/32 ,  H01J31/26 ,  H01J31/40

摘要： An imaging apparatus includes an electron emission array having electron sources arranged in matrix form, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film, wherein the control and drive circuit is further configured to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film in any one or more blanking periods excluding both a blanking period immediately following the given video signal output period and a blanking period immediately preceding a next video signal output period in which the one or more horizontal scan lines will be selected next time.

摘要翻译： 一种成像设备包括：具有以矩阵形式布置的电子源的电子发射阵列，与电子发射阵列相对的光电转换膜;以及控制和驱动电路，配置为在给定的视频信号输出周期中选择一个或多个水平扫描线， 使包括在所选择的一个或多个水平扫描线中的电子源向光电转换膜发射电子，其中控制和驱动电路还被配置为使包括在所选择的一个或多个水平扫描线中的电子源发射 在除了给定视频信号输出周期之后的消隐期以及紧接在下一个视频信号输出周期之前的消隐周期之外的任何一个或多个消隐周期中的一个或多个消隐周期中的电子朝向光电转换膜，其中将选择一个或多个水平扫描线 下次。

公开(公告)号：US20080290254A1

公开(公告)日：2008-11-27

申请号：US12123719

申请日：2008-05-20

申请人： Masakazu NAMBA ,  Yuki Honda ,  Yoshiyuki Hirano ,  Saburo Okazaki ,  Norifumi Egami ,  Toshihisa Watabe ,  Yoshiro Takiguchi ,  Akira Kobayashi ,  Shigeo Itoh ,  Masateru Taniguchi ,  Kazuhito Nakamura ,  Kenta Miya ,  Yoshiyuki Okuda ,  Nobuyasu Negishi

发明人： Masakazu NAMBA ,  Yuki Honda ,  Yoshiyuki Hirano ,  Saburo Okazaki ,  Norifumi Egami ,  Toshihisa Watabe ,  Yoshiro Takiguchi ,  Akira Kobayashi ,  Shigeo Itoh ,  Masateru Taniguchi ,  Kazuhito Nakamura ,  Kenta Miya ,  Yoshiyuki Okuda ,  Nobuyasu Negishi

IPC分类号： H01L31/00

CPC分类号： H01J31/38 ,  H01J31/49 ,  H04N5/217 ,  H04N5/30

摘要： An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period.

摘要翻译： 一种成像装置，包括：电子发射阵列，其具有以矩阵形式布置并具有多条水平扫描线的电子源，与电子发射阵列相对的光电转换膜;以及控制和驱动电路，被配置为选择一个或多个水平 在给定的视频信号输出周期中扫描线，并且使包括在所选择的一个或多个水平扫描线中的电子源向光电转换膜发射电子以产生视频信号，其中控制和驱动电路被配置为使得 电子源包括在给定视频信号输出周期内未选择的未选择的一个或多个水平扫描线，以在紧接在给定视频信号输出周期之前的消隐期间向光电转换膜发射电子。

公开(公告)号：US4916342A

公开(公告)日：1990-04-10

申请号：US317723

申请日：1989-03-02

申请人： Yoshiyuki Hirano ,  Yoshihiro Moribe

发明人： Yoshiyuki Hirano ,  Yoshihiro Moribe

IPC分类号： G11B21/02 ,  G11B5/55 ,  H02K33/18 ,  H02K41/035

CPC分类号： H02K41/0358 ,  G11B5/5521

摘要： In a rotary actuator including a voice coil motor having a coil fitted to the other end portion of a carriage fixed to a rotary shaft and having a load at one of the end portions thereof, the rotary actuator of the present invention is characterized in that the rotation on the coil side and the rotation on the load side with respect to the rotary shaft are balanced. The weight of the coil is adjusted by forming the coil by at least two kinds of coil wires having different specific gravities, and where a plurality of coils are disposed on the outer side of the rotary shaft, the weight of the coil on the load side is made smaller than that of the coil on the opposite side.

摘要翻译： 在具有线圈马达的旋转执行机构中，本发明的旋转执行机构具有线圈马达，该线圈马达具有与固定在旋转轴上的托架的另一端部并且在其一端部具有载荷的线圈，其特征在于， 平衡线圈侧的旋转和负载侧相对于旋转轴的旋转。 线圈的重量通过由具有不同比重的至少两种线圈线形成线圈来调节，并且多个线圈设置在旋转轴的外侧，负载侧的线圈的重量 比在相对侧的线圈小。

公开(公告)号：US4716131A

公开(公告)日：1987-12-29

申请号：US675768

申请日：1984-11-28

申请人： Takeshi Okazawa ,  Yoshiyuki Hirano

发明人： Takeshi Okazawa ,  Yoshiyuki Hirano

IPC分类号： H01L21/321 ,  H01L21/336 ,  H01L21/768 ,  H01L21/283

CPC分类号： H01L29/66575 ,  H01L21/32105 ,  H01L21/76889 ,  Y10S257/90 ,  Y10S438/911

摘要： A metal silicide film is formed on the sides of a polycrystalline silicon layer formed on a semiconductor substrate via an insulating film and the surface of the metal silicide film is covered by a silicon oxide film, whereby the silicon layer has a low electrical resistance and no short-circuiting is necessary. For example, in an insulated gate field effect transistor, the gate electrode is constituted by the polycrystalline silicon layer and the metal silicide film at the side walls of the polycrystalline silicon layer. Such a gate electrode has a low electrical resistance and does not cause undesirable short-circuiting with source and drain regions by the existence of the silicon oxide film formed on the surface of the metal silicide film. Also, other metal silicide film may be formed on the upper surface of the gate electrode. Moreover the silicide-SiO.sub.2 structure may be used on the source and drain regions.

摘要翻译： 通过绝缘膜在半导体衬底上形成的多晶硅层的侧面上形成金属硅化物膜，并且金属硅化物膜的表面被氧化硅膜覆盖，由此硅层具有低电阻和无 短路是必要的。 例如，在绝缘栅场效应晶体管中，栅极由多晶硅层和多晶硅层侧壁的金属硅化物膜构成。 这种栅电极具有低电阻，并且由于存在形成在金属硅化物膜的表面上的氧化硅膜，不会引起与源区和漏区的不期望的短路。 而且，也可以在栅电极的上表面上形成其他的金属硅化物膜。 此外，硅化物SiO 2结构可以用在源区和漏区上。