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    CERAMIC PACKAGE FOR HEADLAMP AND HEADLAMP MODUL HAVING THE SAME
    11.
    发明申请
    CERAMIC PACKAGE FOR HEADLAMP AND HEADLAMP MODUL HAVING THE SAME 有权
    用于HEADLAMP和HEADLAMP的陶瓷包装具有相同的功能

    公开(公告)号：US20100127300A1

    公开(公告)日：2010-05-27

    申请号：US12343455

    申请日：2008-12-23

    Applicant: Young Jin LEE ,  Hyung Kun Kim

    Inventor： Young Jin LEE ,  Hyung Kun Kim

    IPC: H01L31/00

    CPC classification number: H01L33/62 ,  H01L33/486 ,  H01L33/641 ,  H01L2924/0002 ,  H01L2924/19107 ,  H01L2924/00

    Abstract: Provided is a ceramic package for headlamp, and a headlamp module having the same. The ceramic package for headlamp includes a body part, a pair of internal electrodes, and an electrode exposing part. The body part has a cavity formed therein. The cavity is upwardly opened to expose a light emitting diode mounted on a mounting part. The pair of internal electrodes in the body part is electrically connected to the light emitting diode. The electrode exposing part is stepped at either side of the body part to upwardly expose the internal electrode to the outside.

    Abstract translation: 提供了一种用于头灯的陶瓷封装件和具有该陶瓷封装件的前照灯模块。 用于头灯的陶瓷封装包括主体部分，一对内部电极和电极暴露部分。 主体部分具有形成在其中的空腔。 空腔向上打开以暴露安装在安装部件上的发光二极管。 主体部分中的一对内部电极电连接到发光二极管。 电极暴露部分在主体部分的任一侧是阶梯状的，以将内部电极向外暴露于外部。

    MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME
    12.
    发明申请
    MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME 失效
    用于防止金属线之间的扩散的半导体器件的多层金属线及其形成方法

    公开(公告)号：US20100038788A1

    公开(公告)日：2010-02-18

    申请号：US12607267

    申请日：2009-10-28

    Applicant: Jeong Tae KIM ,  Baek Mann KIM ,  Soo Hyun KIM ,  Young Jin LEE ,  Dong Ha JUNG

    Inventor： Jeong Tae KIM ,  Baek Mann KIM ,  Soo Hyun KIM ,  Young Jin LEE ,  Dong Ha JUNG

    IPC: H01L23/532

    CPC classification number: H01L21/76843 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76856 ,  H01L23/5226 ,  H01L23/53214 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern.

    Abstract translation: 半导体器件的多层金属线包括半导体衬底; 形成在半导体衬底上并在其表面上凹陷的下金属线; 形成在所述半导体衬底上的绝缘层，所述绝缘层包括所述下金属线并且具有用于暴露所述下金属线的凹陷部分并限定上金属线形成区域的镶嵌图案; 形成在下金属线的凹部的表面上的胶层; 形成在所述胶层上以填充所述下金属线的凹部的第一扩散阻挡层; 形成在所述胶层和所述第一扩散阻挡层上的第二扩散阻挡层; 形成在所述第二扩散阻挡层上的第三扩散阻挡层和所述镶嵌图案的表面; 以及形成在第三扩散阻挡层上以填充镶嵌图案的上金属线。

    MULTI-LAYERED METAL LINE HAVING AN IMPROVED DIFFUSION BARRIER OF A SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    14.
    发明申请
    MULTI-LAYERED METAL LINE HAVING AN IMPROVED DIFFUSION BARRIER OF A SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 失效
    具有改进的半导体器件的扩展阻挡层的多层金属线及其形成方法

    公开(公告)号：US20090001579A1

    公开(公告)日：2009-01-01

    申请号：US11939798

    申请日：2007-11-14

    Applicant: Baek Mann KIM ,  Seung Jin YEOM ,  Young Jin LEE ,  Dong Ha JUNG ,  Jeong Tae KIM

    Inventor： Baek Mann KIM ,  Seung Jin YEOM ,  Young Jin LEE ,  Dong Ha JUNG ,  Jeong Tae KIM

    IPC: H01L21/4763 ,  H01L23/52

    CPC classification number: H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A multi-layered metal line of a semiconductor device and a process of forming the same are described. The multi-layered metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is subsequently formed on the semiconductor substrate including the lower metal line and has an upper metal line forming region that exposes a portion of the lower metal line. A diffusion barrier formed on a surface of the upper metal line forming region of the insulation layer. The diffusion barrier includes a W—B—N ternary layer. An upper metal line is finally formed on the diffusion barrier to fill the upper metal line forming region of the insulation layer.

    Abstract translation: 描述半导体器件的多层金属线及其形成方法。 多层金属线包括形成在半导体衬底上的下金属线。 随后在包括下金属线的半导体衬底上形成绝缘层，并且具有暴露下部金属线的一部分的上部金属线形成区域。 形成在绝缘层的上部金属线形成区域的表面上的扩散阻挡层。 扩散阻挡层包括W-B-N三元层。 在扩散阻挡层上最终形成上金属线以填充绝缘层的上金属线形成区域。

    METHOD OF FORMING TUNGSTEN POLYMETAL GATE HAVING LOW RESISTANCE
    16.
    发明申请
    METHOD OF FORMING TUNGSTEN POLYMETAL GATE HAVING LOW RESISTANCE 失效
    形成具有低电阻性的钨金属聚合物的方法

    公开(公告)号：US20080081452A1

    公开(公告)日：2008-04-03

    申请号：US11693137

    申请日：2007-03-29

    Applicant: Soo Hyun KIM ,  Noh Jung KWAK ,  Baek Mann KIM ,  Young Jin LEE ,  Sun Woo HWANG ,  Kwan Yong LIM

    Inventor： Soo Hyun KIM ,  Noh Jung KWAK ,  Baek Mann KIM ,  Young Jin LEE ,  Sun Woo HWANG ,  Kwan Yong LIM

    IPC: H01L21/3205

    CPC classification number: H01L21/28061 ,  H01L29/4941

    Abstract: A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.

    Abstract translation: 通过在半导体衬底上形成栅极绝缘层和多晶硅层来制造钨多金属栅极; 在所述多晶硅层上沉积阻挡层; 通过ALD工艺在阻挡层上沉积钨成核层; 通过CVD工艺在钨成核层上沉积钨层; 在钨层上沉积硬掩模层; 并且蚀刻硬掩模层，钨层，钨成核层，势垒层，多晶硅层和栅极绝缘层。

    COMPRESSION CHAMBER FOR COMPRESSION TYPE RAMEN COOKER
    17.
    发明公开
    COMPRESSION CHAMBER FOR COMPRESSION TYPE RAMEN COOKER 审中-公开

    公开(公告)号：US20230190029A1

    公开(公告)日：2023-06-22

    申请号：US17927255

    申请日：2020-09-04

    Applicant: Seung Hun SHIN ,  Se Yeol CHOI ,  Young Jin LEE

    Inventor： Seung Hun SHIN ,  Se Yeol CHOI ,  Young Jin LEE

    IPC: A47J27/08 ,  A47J27/092 ,  A47J27/18

    CPC classification number: A47J27/0815 ,  A47J27/18 ,  A47J27/092 ,  A47J27/0802

    Abstract: A compression chamber for a compression type ramen cooker is capable of cooking ramen by compression by blocking a discharge of air in a cooking container while cooking ramen. The compression chamber includes a lid, a chamber container having an upper portion on which the lid is mounted and a bottom surface to which the cooking container is coupled to seal the cooking container, a heater installed through the lid and mounted inside the chamber container to heat the water stored in the chamber container, a supply valve unit installed through the lid to supply water to the inside of the chamber container, a discharge valve unit installed through the lid to supply water in the chamber container to the cooking container, and a vapor discharge unit on a lower side of the chamber container to discharge compressed steam inside the cooking container.

    COMPRESSION TYPE RAMEN COOKER USING INDUCTION HEATER
    18.
    发明申请
    COMPRESSION TYPE RAMEN COOKER USING INDUCTION HEATER 有权

    公开(公告)号：US20230137572A1

    公开(公告)日：2023-05-04

    申请号：US17927207

    申请日：2020-09-04

    Applicant: Seung Hun SHIN ,  Se Yeol CHOI ,  Young Jin LEE

    Inventor： Seung Hun SHIN ,  Se Yeol CHOI ,  Young Jin LEE

    IPC: A47J27/086 ,  A47J27/08 ,  A47J27/10 ,  H05B6/12

    Abstract: A compression type ramen cooker according to an embodiment includes a main frame including side plates formed on both sides thereof, an upper main bar connecting the upper portions of the side plates, and a lower main bar connecting the lower portions of the side plates, a cooking vessel part rotatably mounted on the inner sides of the side plates, a compression chamber mounted above the upper main bar to seal or open the cooking vessel part by moving up and down, an induction heater rotatably mounted on the rear side of the cooking vessel part to heat the cooking vessel part, a ramen discharging part for discharging cooked ramen from the cooking vessel part, and a drain mounted in the lower end of the side plates on both sides to discard the water used for cleaning the cooking vessel part after cooking.

    AC DRIVEN LIGHT EMITTING DEVICE
    19.
    发明申请
    AC DRIVEN LIGHT EMITTING DEVICE 审中-公开
    交流驱动发光装置

    公开(公告)号：US20120153849A1

    公开(公告)日：2012-06-21

    申请号：US13324514

    申请日：2011-12-13

    Applicant: Young Jin LEE ,  Hyung Kun Kim

    Inventor： Young Jin LEE ,  Hyung Kun Kim

    IPC: H05B37/02

    CPC classification number: H05B33/0821

    Abstract: Provided is an alternating current (AC) driven light emitting device, including: a plurality of half-wave driving units respectively having at least one light emitting diode (LED) and provided in a loop connecting respective half-wave driving unit terminals; and at least one full-wave driving unit having at least one LED and connecting one node between two of the plurality of half-wave driving units to another node between another two of the plurality of half-wave driving units, at least one of the half-wave driving unit and the full-wave driving unit having a parallel connection structure of at least two LEDs. An array of LEDs appropriate to being drivable by AC is provided to secure reliability in error in operation of some LEDs.

    Abstract translation: 提供一种交流（AC）驱动的发光器件，包括：多个半波驱动单元，分别具有至少一个发光二极管（LED），并且设置在连接各个半波驱动单元端子的环路中; 以及至少一个全波驱动单元，其具有至少一个LED并且将所述多个半波驱动单元中的两个之间的一个节点连接到所述多个半波驱动单元中的另两个之间的另一节点，所述至少一个 半波驱动单元和具有至少两个LED的并联连接结构的全波驱动单元。 提供了适合于被AC驱动的LED阵列，以确保一些LED的操作中的可靠性错误。

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