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101 条记录 (耗时 0.038 秒)

    Image sensor with adjusted gains in active and black pixels
    16.
    发明申请
    Image sensor with adjusted gains in active and black pixels 有权
    有源和黑色像素调节增益的图像传感器

    公开(公告)号：US20090160971A1

    公开(公告)日：2009-06-25

    申请号：US12291910

    申请日：2008-11-14

    申请人： Sang-Il Jung ,  Young-Hoon Park

    发明人： Sang-Il Jung ,  Young-Hoon Park

    IPC分类号： H04N5/235

    CPC分类号： H01L27/14603

    摘要： An image sensor includes an active pixel and a black pixel. The active pixel has a first signal gain and a first dark signal level, and the black pixel has a second signal gain and a second dark signal level. At least one of the first and second signal gains is adjusted such that the first and second dark signal levels are substantially equal for minimizing image defects in the image sensor.

    摘要翻译： 图像传感器包括有源像素和黑色像素。 有源像素具有第一信号增益和第一暗信号电平，并且黑色像素具有第二信号增益和第二暗信号电平。 调整第一和第二信号增益中的至少一个，使得第一和第二暗信号电平基本上相等以使图像传感器中的图像缺陷最小化。

    Unit pixels, image sensors and methods of manufacturing the same
    17.
    发明申请
    Unit pixels, image sensors and methods of manufacturing the same 审中-公开
    单位像素，图像传感器及其制造方法

    公开(公告)号：US20090008688A1

    公开(公告)日：2009-01-08

    申请号：US12213534

    申请日：2008-06-20

    申请人： Young-Hoon Park ,  Sang-Il Jung

    发明人： Young-Hoon Park ,  Sang-Il Jung

    IPC分类号： H01L27/146 ,  H01L31/18

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

    摘要： Unit pixels, image sensors and methods for fabricating the image sensor are provided. A unit pixel includes: a photodiode for accumulating photocharges; a floating diffusion region for detecting the photocharges accumulated in the photodiode; a reset element for periodically resetting the floating diffusion region; a drive element for amplifying the photocharges accumulated in the floating diffusion region; a selection element for selecting the unit pixel; and a silicide layer formed on top surfaces of the transfer gate. The photocharges are transferred to the floating diffusion region via a transfer gate.

    摘要翻译： 提供了用于制造图像传感器的单位像素，图像传感器和方法。 单位像素包括：用于累积光电荷的光电二极管; 用于检测累积在光电二极管中的光电荷的浮动扩散区域; 用于周期性地重置浮动扩散区域的复位元件; 用于放大积聚在浮动扩散区域中的光电荷的驱动元件; 用于选择单位像素的选择元素; 以及形成在所述传输门的顶表面上的硅化物层。 光电荷通过传输门传递到浮动扩散区。

    Microorganism producing 5'xanthylic acid
    19.
    发明授权
    Microorganism producing 5'xanthylic acid 有权
    微生物产生5'叶酸

    公开(公告)号：US07217558B2

    公开(公告)日：2007-05-15

    申请号：US10531675

    申请日：2003-12-10

    申请人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

    发明人： Young-Hyeon Kwag ,  Ki-Hoon Oh ,  Jeong-Hwan Kim ,  Yoon-Suk Oh ,  Jae-Ick Sim ,  Young-Hoon Park ,  Jea-Young Chang

    IPC分类号： C12N1/12 ,  C12N17/02 ,  C12N19/28 ,  C12N1/00

    CPC分类号： C12P19/32 ,  C12P19/40 ,  C12R1/15

    摘要： The invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 producing 5′-xanthylic acid. More specifically, the invention relates to Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 which is a mutant strain of Corynebacterium ammoniagenes KCCM 10340 having a resistance to oligomycin. In order to obtain mutant strain having enhanced respiratory activity, the present invention adopted Corynebacterium ammoniagenes KCCM 10340 as parent strain and treated it with UV radiation and mutation derivatives such as N-methyl-N′-nitro-n-nitrosoguanidine(NTG) according to ordinary procedure. Therefore, Corynebacterium ammoniagenes CJXOL 0201 KCCM 10447 of the present invention makes it possible to increase ATP reproducing activity for same period of fermentation and can accumulate 5′xanthylic acid in culture medium at a high yield and concentration rate.

    摘要翻译： 本发明涉及产生5'-戊酸的产氨棒杆菌CJXOL 0201 KCCM 10447。 更具体地，本发明涉及产氨杆菌CJXOL 0201 KCCM 10447，它是具有对寡霉素抗性的产氨棒杆菌KCCM10340的突变菌株。 为了获得具有增强的呼吸活性的突变菌株，本发明使用产氨杆菌KCCM 10340作为亲本菌株，并用UV辐射和N-甲基-N'-硝基-N-亚硝基胍（NTG）等突变衍生物按照 普通程序。 因此，本发明的产氨酸棒杆菌CJXOL 0201 KCCM 10447可以在相同的发酵期内增加ATP的再生活性，并且可以以高产率和浓度的速率在培养基中积累5'-戊酸。

    CMOS image sensor and method of fabricating the same
    20.
    发明申请
    CMOS image sensor and method of fabricating the same 有权

    公开(公告)号：US20060231870A1

    公开(公告)日：2006-10-19

    申请号：US11446925

    申请日：2006-06-05

    申请人： Young-Hoon Park ,  Sang-Il Jung

    发明人： Young-Hoon Park ,  Sang-Il Jung

    IPC分类号： H01L29/80

    CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14643 ,  H01L27/14689

    摘要： A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.