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    Non-volatile memory device and method of fabricating the same
    12.
    发明申请
    Non-volatile memory device and method of fabricating the same 审中-公开
    非易失性存储器件及其制造方法

    公开(公告)号：US20090045450A1

    公开(公告)日：2009-02-19

    申请号：US11976250

    申请日：2007-10-23

    申请人： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

    发明人： June-mo Koo ,  Suk-pil Kim ,  Young-gu Jin ,  Won-joo Kim ,  In-kyeong Yoo ,  Yoon-dong Park

    IPC分类号： H01L29/788 ,  H01L21/336

    CPC分类号： H01L29/66825 ,  H01L27/115 ,  H01L27/11521 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7881

    摘要： Provided are a non-volatile memory device, which may have higher integration density, improved or optimal structure, and/or reduce or minimize interference between adjacent cells without using an SOI substrate, and a method of fabricating the non-volatile memory device. The non-volatile memory device may include: a semiconductor substrate comprising a body, and a pair of fins protruding from the body; a buried insulating layer filling between the pair of fins; a pair of floating gate electrodes on outer surfaces of the pair of fins to a height greater than that of the pair of fins; and a control gate electrode on the pair of floating gate electrodes.

    摘要翻译： 提供了一种非易失性存储器件，其可以具有更高的集成密度，改进的或最优的结构，和/或减少或最小化相邻单元之间的干扰而不使用SOI衬底，以及制造非易失性存储器件的方法。 非易失性存储器件可以包括：半导体衬底，其包括主体和从主体突出的一对鳍; 埋在绝缘层之间的一对散热片; 一对浮栅电极，其在所述一对翅片的外表面上的高度大于所述一对鳍片的高度; 以及一对浮栅上的控制栅电极。

    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors
    17.
    发明授权
    Distance measuring sensors including vertical photogate and three-dimensional color image sensors including distance measuring sensors 有权
    距离测量传感器包括垂直光栅和三维彩色图像传感器，包括距离测量传感器

    公开(公告)号：US07626685B2

    公开(公告)日：2009-12-01

    申请号：US12222208

    申请日：2008-08-05

    申请人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    发明人： Young-gu Jin ,  Yoon-dong Park ,  Won-joo Kim ,  Seung-hoon Lee ,  In-sung Joe

    IPC分类号： G01C3/08 ,  H01L31/062

    CPC分类号： G01C3/08 ,  G01S7/4863 ,  G01S17/89

    摘要： A distance measuring sensor may include: a photoelectric conversion region; first and second charge storage regions; first and second trenches; and/or first and second vertical photogates. The photoelectric conversion region may be in a substrate and/or may be doped with a first impurity in order to generate charges in response to received light. The first and second charge storage regions may be in the substrate and/or may be doped with a second impurity in order to collect charges. The first and second trenches may be formed to have depths in the substrate that correspond to the first and second charge storage regions, respectively. The first and second vertical photogates may be respectively in the first and second trenches. A three-dimensional color image sensor may include a plurality of unit pixels. Each unit pixel may include a plurality of color pixels and the distance measuring sensor.

    摘要翻译： 距离测量传感器可以包括：光电转换区域; 第一和第二电荷存储区域; 第一和第二壕沟; 和/或第一和第二垂直摄影门。 光电转换区域可以在衬底中和/或可以掺杂第一杂质，以响应于接收的光产生电荷。 第一和第二电荷存储区域可以在衬底中和/或可以掺杂第二杂质以便收集电荷。 第一沟槽和第二沟槽可以形成为分别对应于第一和第二电荷存储区域的衬底中的深度。 第一和第二垂直摄影门可以分别在第一和第二沟槽中。 三维彩色图像传感器可以包括多个单位像素。 每个单位像素可以包括多个彩色像素和距离测量传感器。

    Nonvolatile memory devices and methods of operating the same
    19.
    发明申请
    Nonvolatile memory devices and methods of operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20080304328A1

    公开(公告)日：2008-12-11

    申请号：US12071451

    申请日：2008-02-21

    申请人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

    发明人： Young-gu Jin ,  Ki-ha Hong ,  Yoon-dong Park ,  Jai-kwang Shin ,  Suk-pil Kim

    IPC分类号： G11C16/06 ,  H01L29/788

    CPC分类号： G11C16/0416 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/0673 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

    摘要： Example embodiments include nonvolatile memory devices that have good operation performance and may be made in a highly integrated structure, and methods of operating the same. Example embodiments of the nonvolatile memory devices include a substrate electrode, and a semiconductor channel layer on the substrate electrode, a floating gate electrode on the substrate electrode, wherein a portion of the floating gate electrode faces the semiconductor channel layer, a control gate electrode on the floating gate electrode, and wherein a distance between a portion of the floating gate electrode and the substrate electrode is smaller than a distance between the semiconductor channel layer and the substrate electrode wherein charge tunneling occurs.

    摘要翻译： 示例性实施例包括具有良好操作性能并且可以以高度集成的结构制造的非易失性存储器件及其操作方法。 非易失性存储器件的示例性实施例包括衬底电极和衬底电极上的半导体沟道层，衬底电极上的浮置栅电极，其中浮置栅电极的一部分面向半导体沟道层，控制栅极电极 所述浮置栅极电极，并且其中所述浮置栅电极的一部分与所述基板电极之间的距离小于半导体沟道层与发生电荷隧道的基板电极之间的距离。

    Capacitorless DRAM and methods of manufacturing and operating the same
    20.
    发明申请
    Capacitorless DRAM and methods of manufacturing and operating the same 失效
    无电容DRAM及其制造和运行方法相同

    公开(公告)号：US20090065835A1

    公开(公告)日：2009-03-12

    申请号：US12153666

    申请日：2008-05-22

    申请人： Suk-pil Kim ,  Young-gu Jin ,  Yoon-dong Park

    发明人： Suk-pil Kim ,  Young-gu Jin ,  Yoon-dong Park

    IPC分类号： H01L29/00 ,  H01L21/336

    CPC分类号： H01L27/108 ,  H01L27/10802 ,  H01L29/7841

    摘要： Example embodiments provide a capacitorless dynamic random access memory (DRAM), and methods of manufacturing and operating the same. The capacitorless DRAM according to example embodiments may include a semiconductor layer separated from a top surface of a substrate and that contains a source region, a drain region, and a channel region, a charge reserving layer formed on the channel region, and a gate formed on the substrate to contact the channel region and the charge reserving layer.

    摘要翻译： 示例性实施例提供无电容器动态随机存取存储器（DRAM）及其制造和操作方法。 根据示例实施例的无电容器DRAM可以包括从衬底的顶表面分离并且包含源极区，漏极区和沟道区的半导体层，形成在沟道区上的电荷保留层，以及形成的栅极 在基板上与沟道区和电荷保留层接触。