ANGULAR VELOCITY SENSOR
    11.
    发明申请
    ANGULAR VELOCITY SENSOR 有权
    角速度传感器

    公开(公告)号:US20140224015A1

    公开(公告)日:2014-08-14

    申请号:US14241950

    申请日:2012-09-03

    IPC分类号: G01C19/56

    摘要: Provided herein is a vibration-type angular velocity sensor capable of improving detection precision of angular velocities around the Z axis and preventing detection precision of angular velocities around the X and Y axes from deteriorating. A weight 3 is columnar or conic. The outline of an outer peripheral portion of a diaphragm 1 has such shape that a straight portion ST is formed at each of four corner portions of a square. Four vibration exciting electrodes 11 are respectively located in four regions partitioned by a first imaginary line L1 and a second imaginary line L2. Four angular velocity sensing electrodes 13 are respectively located in four regions partitioned by a first imaginary diagonal line CL1 and a second imaginary diagonal line Cl2.

    摘要翻译: 本发明提供能够提高Z轴周围的角速度的检测精度的振动型角速度传感器,能够防止X轴和Y轴的角速度的检测精度降低。 重量3是圆柱形或圆锥形。 隔膜1的外周部的轮廓具有在正方形的四个角部的每一个处形成直线部ST的形状。 四个振动激励电极11分别位于由第一虚线L1和第二虚线L2分隔的四个区域中。 四个角速度感测电极13分别位于由第一虚拟对角线CL1和第二虚拟对角线C12分隔的四个区域中。

    Biaxial angular velocity sensor
    12.
    发明授权
    Biaxial angular velocity sensor 失效
    双轴角速度传感器

    公开(公告)号:US08418553B2

    公开(公告)日:2013-04-16

    申请号:US13000689

    申请日:2009-06-18

    IPC分类号: G01C19/56

    CPC分类号: G01C19/5733

    摘要: A biaxial angular velocity sensor provided herein has good detection sensitivity and allows an oscillator to be fixed stably. The biaxial angular velocity sensor includes an oscillator (3) made of a non-piezoelectric material, an electromechanical energy converting element (23) for driving and electromechanical energy converting element (25) for detection, both of which are provided in the oscillator (3), a plurality of drive electrodes (27) provided corresponding to the electromechanical energy converting element (23) for driving, and a plurality of detection electrodes (29) provided corresponding to the electromechanical energy converting element (25) for detection. The oscillator (3) includes a central portion (5) located in the center of the oscillator and eight first to eighth arm portions (7) to (21). The distal end portions of the fifth to eighth arm portions (15) to (21), located on the opposite side to the central portion (5), are fixed.

    摘要翻译: 本文提供的双轴角速度传感器具有良好的检测灵敏度,并且可以稳定地固定振荡器。 双轴角速度传感器包括由非压电材料构成的振荡器(3),用于驱动的​​机电能量转换元件(23)和用于检测的机电能量转换元件(25),两者均设置在振荡器(3) ),与用于驱动的​​机电能量转换元件(23)相对应设置的多个驱动电极(27)和与机电能量转换元件(25)对应设置的用于检测的多个检测电极(29)。 振荡器(3)包括位于振荡器中心的中心部分(5)和八个第一至第八臂部分(7)至(21)。 第五至第八臂部分(15)至(21)的远离中心部分(5)的相对侧的末端部分是固定的。

    Semiconductor Sensor
    13.
    发明授权
    Semiconductor Sensor 失效
    半导体传感器

    公开(公告)号:US07640807B2

    公开(公告)日:2010-01-05

    申请号:US11572384

    申请日:2005-07-07

    IPC分类号: G01P15/08

    摘要: A semiconductor sensor of the present invention is capable of preventing a diaphragm portion of the sensor from being damaged if a weight collides against a semiconductor integrated circuit substrate of the sensor and is further capable of preventing the diaphragm portion from being bent significantly even when a semiconductor sensor element of the sensor is disposed inside a distorted or deformed casing. A rear surface of the semiconductor integrated circuit substrate 7 is joined onto a wall surface of the casing 9 that defines a receiving chamber of the casing. A support portion of the semiconductor sensor element is joined onto a front surface 7a of the semiconductor integrated circuit substrate 7. A shock absorbing layer is formed on the front surface 7a of the semiconductor integrated circuit substrate 7 at least on a part thereof facing the weight 3 of the semiconductor sensor element 7, for suppressing the bouncing of the weight 3 when the weight 3 collides against the semiconductor integrated circuit substrate 7.

    摘要翻译: 如果本发明的半导体传感器如果重量与传感器的半导体集成电路基板碰撞而能够防止传感器的隔膜部分损坏,并且即使当半导体 传感器的传感器元件设置在变形或变形的壳体内。 半导体集成电路基板7的背面接合在壳体9的限定壳体的容纳室的壁面上。 半导体传感器元件的支撑部分接合到半导体集成电路基板7的前表面7a上。在半导体集成电路基板7的前表面7a上至少形成有面向重量的冲击吸收层 3,用于当重量3与半导体集成电路基板7碰撞时抑制重量3的弹跳。