摘要:
There are discolsed a pesticidal composition containing a water-insoluble alginate, which is prepared by treating a solid composition containing (a) a pesticidally active ingredient which is a pest-controlling active ingredient or a plant growth-regulating active ingredient and (b) an alginic acid or a water-soluble alginate with an aqueous solution containing a divalent or polyvalent cation which can convert said alginic acid or water-soluble alginate into a water-insoluble alginate. Also disclosed is a pesticidal composition containing a water-insoluble alginate, which is prepared by coating a solid substance containing the pesticidally active ingredient with a water-insoluble alginate. The composition of the invention has excellent sustained-release effects of the pesticidally active ingredient.
摘要:
A bus transceiver in a first signal processing circuit is connected to one end of a first bus connecting line for transferring a data pulse signal. A bus transceiver in a second signal processing circuit is connected to one end of a second bus connecting line for transferring a data pulse signal. Connected to the other end of the first bus connecting line is a first termination resistor. Connected to the other end of the second bus connecting line is a second termination resistor. In a portion of a predetermined length (parallel coupling portion) in the first and second bus connecting lines, the interval between the first and second bus connecting lines is held substantially constant so as to produce capacitive and inductive coupling between both the bus connecting lines. Each of the first and second bus transceivers includes a bus driver and a bus receiver. The bus receiver in the first bus transceiver generates a pulse signal substantially equal to an output pulse signal which was generated from the bus driver in the second bus transceiver, based on a pulse waveform induced in the parallel coupling portion on the first bus connecting line by the output pulse signal from the second bus transceiver.
摘要:
A lens sheet comprising a transparent substrate and a lens portion composed of a cured product of an ultraviolet-curable resin composition, which is formed on at least one surface of the transparent substrate. The resin composition exhibits a polymerization shrinkage at curing of not larger than 20% as calculated based on the difference of the specific gravity at 25.degree. C., and a modulus of elasticity at 25.degree. C. after curing of 10 to 1,000 kg/cm.sup.2. The ultraviolet-curable resin composition is preferably comprised of a polyvalent (meth)acrylate, a mono(meth)acrylate and a photopolymerization initiator.
摘要:
Provided is a rear projection screen apparatus having a rear projection screen, light rays from a projecter being incident upon the rear surface of the rear projection screen at steep angles, wherein a plurality of elongated prisms are formed on the rear surface of the screen, each prism having a reflection surface extending therealong, thereby the incedence light rays are internally reflected, and then transmitted through the medium of screen for emerging from the front surface of the screen on the viewing side, and the rear surface of the screen is in a curve shape which is convex toward the viewing side so that the brightness of the screen can be made to be uniform.
摘要:
The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.
摘要:
An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor.
摘要:
An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of: a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor.
摘要:
An active region on a semiconductor substrate is electrically isolated by trench isolation. A structure of the trench isolation is constituted of: a trench; a silicon oxide film formed on the inner wall of trench; an oxidation preventive film formed between silicon oxide film and semiconductor substrate; and a filling oxide film filling trench. Gate oxide film is formed by oxidation having a high capability by which radicals of at least one kind of hydrogen radicals and oxygen radicals are generated. Thereby, gate oxide film is formed so as to have a almost uniform thickness such that a thickness of a region directly above oxidation preventive film and a thickness of a region directly below gate electrode are almost the same is each other. According to the above procedure, there are obtained a semiconductor device having good transistor characteristics and a fabrication process therefor.
摘要:
There is described prevention of an increase in the thickness of an oxide film of a silicon wafer, which would otherwise be caused by eruption of gas from a CVD oxide film of another wafer during the course of a high-temperature annealing operation. A semiconductor device, which has a silicon substrate and trench isolation structures for isolating a plurality of active regions from one another, is manufactured by the steps as follows. A first and a second dielectric films are formed on the silicon substrate of one of the conductivity types. The dielectric films are removed from the areas of the silicon substrate where the trench structures are to be formed. The trench structures are formed in the uncovered areas of the silicon substrate to a predetermined depth. An oxide film is deposited into the respective trench structures by means of CVD after the oxide film has been deposited on the interior surface of the respective trench structure. The surface of the deposited oxide film is smoothed by means of removing the deposited oxide film from the silicon substrate through use of chemical-and-mechanical polishing. The second dielectric film is removed and the first dielectric film remains on the areas of the silicon substrate which are to become active regions. Then, the wafer is annealed in inactive gas at a temperature of 900° C. or less.
摘要:
Front end clamps are disposed on the cylindrical surface of a recording drum, and rear end clamps are attached in any of a plurality of positions at the cylindrical surface of the recording drum. A controller controls a front end clamp opening/closing device to open the front end clamps and controls a pair of rollers to feed a plate held on a plate carry-in path. The controller also controls the front end clamp opening/closing device to close the plate fixing portion of the front end clamps to fix the front end of the plate on the cylindrical surface, controls a driving device to rotate the recording drum for a predetermined amount, and controls a rear end clamp attaching/detaching device to attach the rear end clamps to the cylindrical surface to fix the rear end of the plate on the recording drum cylindrical surface.