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公开(公告)号:US11022491B2
公开(公告)日:2021-06-01
申请号:US16848126
申请日:2020-04-14
Applicant: ams Sensors Singapore Pte. Ltd.
Inventor: Peter Riel , Peter Roentgen
IPC: G01J3/10 , H01S5/04 , H01S5/183 , H01S5/40 , G01J3/06 , G01J3/26 , H01S5/00 , H01S5/10 , H01S5/343 , H01S3/094 , H01S5/323 , H01S5/028
Abstract: The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected pass through.
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公开(公告)号:US20200249087A1
公开(公告)日:2020-08-06
申请号:US16848126
申请日:2020-04-14
Applicant: ams Sensors Singapore Pte. Ltd.
Inventor: Peter Riel , Peter Roentgen
IPC: G01J3/10 , H01S5/04 , H01S5/183 , H01S5/40 , G01J3/06 , G01J3/26 , H01S5/00 , H01S5/10 , H01S5/343
Abstract: The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected pass through.
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13.
公开(公告)号:US20190326340A1
公开(公告)日:2019-10-24
申请号:US16357627
申请日:2019-03-19
Applicant: ams Sensors Singapore Pte. Ltd.
Inventor: Hartmut Rudmann , Mario Cesana , Jens Geiger , Peter Roentgen , Vincenzo Condorelli
IPC: H01L27/146
Abstract: Optoelectronic modules include a silicon substrate in which or on which there is an optoelectronic device. An optics assembly is disposed over the optoelectronic device, and a spacer separates the silicon substrate from the optics assembly. Methods of fabricating such modules also are described.
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公开(公告)号:US20220373454A1
公开(公告)日:2022-11-24
申请号:US17762456
申请日:2021-05-24
Applicant: ams Sensors Singapore Pte. Ltd.
Inventor: Francesco Paolo D'Aleo , Javier Miguel Sánchez , Kotaro Ishizaki , Peter Roentgen
Abstract: According to a first aspect of the present invention there is provided a method of measuring the optical reflectance R of a target using a detection system comprising a light emitter and a light detector spaced apart from one another. The method comprises illuminating the target with the light emitter, detecting light reflected from the target using the light detector, wherein the light detector provides an electrical output signal SS indicative of the intensity of the detected light, and determining the optical reflectance R of the target according to (Formula 1), where RR is the spectral reflectance of a reference standard, SR is the detector electrical output signal with the reference standard in place, SH is the detector electrical output signal with no target in front of the light emitter and light detector, and M is a calibration factor. R = M · R R s s - s H M · ⌈ s R - s H ⌉ - R R ⌈ s R - s s ⌉ , ( 1 )
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公开(公告)号:US20200182695A1
公开(公告)日:2020-06-11
申请号:US16625612
申请日:2018-06-18
Applicant: ams Sensors Singapore Pte. Ltd.
Inventor: Peter Roentgen , Kotaro Ishizaki , Camilla Camarri , Markus Rossi , Elisa Parola , Bassam Hallal
Abstract: Compact spectrometer modules include an illumination channel and a detection channel. The illumination channel includes an illumination source operable to generate a broad spectrum of electromagnetic radiation. The detection channel includes an illumination detector and a Fabry-Perot component. The Fabry-Perot component is operable to pass a narrow spectrum of wavelengths to the illumination detector. Further, the Fabry-Perot component can be actuatable such that the Fabry- Perot component is operable to pass a plurality of narrow spectrums of wavelengths to the illumination detector.
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16.
公开(公告)号:US10680023B2
公开(公告)日:2020-06-09
申请号:US16357627
申请日:2019-03-19
Applicant: ams Sensors Singapore Pte. Ltd.
Inventor: Hartmut Rudmann , Mario Cesana , Jens Geiger , Peter Roentgen , Vincenzo Condorelli
IPC: H01L27/14 , H01L27/146
Abstract: Optoelectronic modules include a silicon substrate in which or on which there is an optoelectronic device. An optics assembly is disposed over the optoelectronic device, and a spacer separates the silicon substrate from the optics assembly. Methods of fabricating such modules also are described.
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公开(公告)号:US10656014B2
公开(公告)日:2020-05-19
申请号:US15512977
申请日:2015-09-23
Applicant: AMS SENSORS SINGAPORE PTE. LTD.
Inventor: Peter Riel , Peter Roentgen
IPC: G01J3/10 , H01S5/04 , H01S5/183 , H01S5/40 , G01J3/06 , G01J3/26 , H01S5/00 , H01S5/10 , H01S5/343 , H01S3/094 , H01S5/323 , H01S5/028
Abstract: The present disclosure describes broadband optical emission sources that include a stack of semiconductor layers, wherein each of the semiconductor layers is operable to emit light of a different respective wavelength; a light source operable to provide optical pumping for stimulated photon emission from the stack; wherein the semiconductor layers are disposed sequentially in the stack such that a first one of the semiconductor layers is closest to the light source and a last one of the semiconductor layers is furthest from the light source, and wherein each particular one of the semiconductor layers is at least partially transparent to the light generated by the other semiconductor layers that are closer to the light source than the particular semiconductor layer. The disclosure also describes various spectrometers that include a broadband optical emission device, and optionally include a tuneable wavelength filter operable to allow a selected wavelength or narrow range of wavelengths to pass through.
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