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公开(公告)号：US10141958B2
公开(公告)日：2018-11-27
申请号：US15048764
申请日：2016-02-19
Applicant: pSemi Corporation
Inventor： Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters also include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may also be included on the common port of the multi-path RF switch to provide additional impedance matching capability.
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公开(公告)号：US20240128945A1
公开(公告)日：2024-04-18
申请号：US18492357
申请日：2023-10-23
Applicant: pSemi Corporation
Inventor： Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
IPC: H03H7/01 , H04B1/00 , H04W72/0453
CPC classification number: H03H7/0161 , H04B1/0053 , H04B1/006 , H04B1/0067 , H04W72/0453 , H04W28/065
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号：US11575351B2
公开(公告)日：2023-02-07
申请号：US17243038
申请日：2021-04-28
Applicant: pSemi Corporation
Inventor： Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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公开(公告)号：US20190097627A1
公开(公告)日：2019-03-28
申请号：US16200047
申请日：2018-11-26
Applicant: pSemi Corporation
Inventor： Michael Conry , Kevin Roberts , Edward Nicholas Comfoltey
IPC: H03K17/693 , H04B1/48 , H04B1/44
Abstract: A FET-based RF switch architecture and method that provides for independent control of FETs within component branches of a switching circuit. With independent control of branch FETs, every RF FET in an inactive branch that is in an “open” (capacitive) state can be shunted to RF ground and thus mitigate impedance mismatch effects. Providing a sufficiently low impedance to RF ground diminishes such negative effects and reduces the sensitivity of the switch circuit to non-matched impedances.
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公开(公告)号：US12237821B2
公开(公告)日：2025-02-25
申请号：US18492357
申请日：2023-10-23
Applicant: pSemi Corporation
Inventor： Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
IPC: H04B1/04 , H01B1/00 , H03H7/01 , H03H7/38 , H04B1/00 , H04B1/40 , H04W72/0453 , H04W88/06 , H04L5/00 , H04W28/06
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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Patent Agency Ranking
公开(公告)号：US11804816B2
公开(公告)日：2023-10-31
申请号：US17669789
申请日：2022-02-11
Applicant: pSemi Corporation
Inventor： Emre Ayranci , Miles Sanner , Ke Li , James Francis McElwee , Tero Tapio Ranta , Kevin Roberts , Chih-Chieh Cheng
IPC: H04B1/04 , H04B1/40 , H01B1/00 , H04W88/06 , H03H7/38 , H03H7/01 , H04B1/00 , H04W72/0453 , H04W28/06 , H04L5/00
CPC classification number: H03H7/0161 , H04B1/006 , H04B1/0053 , H04B1/0067 , H04W72/0453 , H03H7/38 , H03H2210/033 , H03H2210/036 , H04L5/001 , H04W28/065
Abstract: A flexible multi-path RF adaptive tuning network switch architecture that counteracts impedance mismatch conditions arising from various combinations of coupled RF band filters, particularly in a Carrier Aggregation-based (CA) radio system. In one version, a digitally-controlled tunable matching network is coupled to a multi-path RF switch in order to provide adaptive impedance matching for various combinations of RF band filters. Optionally, some or all RF band filters include an associated digitally-controlled filter pre-match network to further improve impedance matching. In a second version, some or all RF band filters coupled to a multi-path RF switch include a digitally-controlled phase matching network to provide necessary per-band impedance matching. Optionally, a digitally-controlled tunable matching network may be included on the common port of the multi-path RF switch to provide additional impedance matching capability. In a third version, CA direct mapped adaptive tuning networks include filter tuning blocks for selected lower frequency bands.
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公开(公告)号：US20210336588A1
公开(公告)日：2021-10-28
申请号：US17243038
申请日：2021-04-28
Applicant: pSemi Corporation
Inventor： Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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公开(公告)号：US20200235709A1
公开(公告)日：2020-07-23
申请号：US16752330
申请日：2020-01-24
Applicant: pSemi Corporation
Inventor： Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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19.发明申请公开(公告)号：US20190173466A1
公开(公告)日：2019-06-06
申请号：US15829638
申请日：2017-12-01
Applicant: pSemi Corporation
Inventor： Ethan Prevost , Dylan J. Kelly , Kevin Roberts , Edward Nicholas Comfoltey
IPC: H03K17/693
Abstract: Methods and devices taught in the present disclosure address the need for reconfigurable multi-pole multi-throw switches for various RF applications having different design requirements. Such reconfigurable switches can be reused for different applications without having to go through long research, development and manufacturing cycles. Design of multi-pole multiple switches with improved performance metric such as insertion loss, parasitic capacitance and bandwidth is also made possible using the teachings of the disclosure.
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公开(公告)号：US20190140602A1
公开(公告)日：2019-05-09
申请号：US16029333
申请日：2018-07-06
Applicant: pSemi Corporation
Inventor： Tero Tapio Ranta , Chih-Chieh Cheng , Kevin Roberts
CPC classification number: H03F1/56 , H03F3/19 , H03F3/195 , H03F3/213 , H03F2200/378 , H03F2200/387 , H03F2200/451
Abstract: An improved architecture for a radio frequency (RF) power amplifier, impedance matching network, and selector switch. One aspect of embodiments of the invention is splitting the functionality of a final stage impedance matching network (IMN) into two parts, comprising a base set of off-chip IMN components and an on-chip IMN tuning component. The on-chip IMN tuning component may be a digitally tunable capacitor (DTC). In one embodiment, an integrated circuit having a power amplifier, an on-chip IMN tuner, and a selector switch is configured to be coupled to an off-chip set of IMN components. In another embodiment, an integrated circuit having an on-chip IMN tuner and a selector switch is configured to be coupled through an off-chip set of IMN components to a separate integrated circuit having an RF power amplifier.
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