公开(公告)号：US20220181497A1

公开(公告)日：2022-06-09

申请号：US17549839

申请日：2021-12-13

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

Abstract: A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US20210194478A1

公开(公告)日：2021-06-24

申请号：US16987265

申请日：2020-08-06

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10797691B1

公开(公告)日：2020-10-06

申请号：US16853688

申请日：2020-04-20

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H03K17/687 ,  H01L29/10

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10630286B2

公开(公告)日：2020-04-21

申请号：US16377114

申请日：2019-04-05

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener ,  Robert B. Welstand

IPC: H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20200067504A1

公开(公告)日：2020-02-27

申请号：US16671967

申请日：2019-11-01

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/10 ,  H01L29/786 ,  H01L29/06 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20190089348A1

公开(公告)日：2019-03-21

申请号：US16054959

申请日：2018-08-03

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener

IPC: H03K17/16 ,  H01L29/10 ,  H01L29/06 ,  H01L29/786 ,  H03K17/687

Abstract: A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10148255B2

公开(公告)日：2018-12-04

申请号：US14883525

申请日：2015-10-14

Applicant: pSemi Corporation

Inventor： Mark L. Burgener ,  Dylan J. Kelly ,  James S. Cable

IPC: H02M3/18 ,  G05F3/16 ,  H03B5/00 ,  H03K3/013 ,  H02M3/07 ,  H03K3/03

Abstract: A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

公开(公告)号：US11196414B2

公开(公告)日：2021-12-07

申请号：US16921790

申请日：2020-07-06

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

公开(公告)号：US20200335633A1

公开(公告)日：2020-10-22

申请号：US16739081

申请日：2020-01-09

Applicant: pSemi Corporation

Inventor： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US10804892B2

公开(公告)日：2020-10-13

申请号：US15826453

申请日：2017-11-29

Applicant: pSemi Corporation

Inventor： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC: H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.