公开(公告)号：US07718457B2

公开(公告)日：2010-05-18

申请号：US11099118

申请日：2005-04-05

Applicant: Thomas Chen ,  Michael Judy

Inventor： Thomas Chen ,  Michael Judy

IPC: H01L21/00

CPC classification number: B81C1/00698 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2207/07 ,  B81C2201/0173 ,  B81C2201/053

Abstract: A method of producing a MEMS device provides an apparatus having structure on a first layer that is proximate to a substrate. The apparatus has a space proximate to the structure. The method adds doped material to the space. The doped material dopes at least a portion of the first layer.

Abstract translation: MEMS器件的制造方法提供了一种在靠近衬底的第一层上具有结构的设备。 该装置具有靠近结构的空间。 该方法向该空间添加掺杂材料。 掺杂材料涂覆第一层的至少一部分。

公开(公告)号：US20060223291A1

公开(公告)日：2006-10-05

申请号：US11099118

申请日：2005-04-05

Applicant: Thomas Chen ,  Michael Judy

Inventor： Thomas Chen ,  Michael Judy

IPC: H01L21/425

CPC classification number: B81C1/00698 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2207/07 ,  B81C2201/0173 ,  B81C2201/053

Abstract: A method of producing a MEMS device provides an apparatus having structure on a first layer that is proximate to a substrate. The apparatus has a space proximate to the structure. The method adds doped material to the space. The doped material dopes at least a portion of the first layer.

Abstract translation: MEMS器件的制造方法提供了一种在靠近衬底的第一层上具有结构的设备。 该装置具有靠近结构的空间。 该方法向该空间添加掺杂材料。 掺杂材料涂覆第一层的至少一部分。

公开(公告)号：US07116462B2

公开(公告)日：2006-10-03

申请号：US10468873

申请日：2002-12-16

Applicant: Koichi Ikeda

Inventor： Koichi Ikeda

IPC: G02B26/00

CPC classification number: B81C1/0015 ,  B81B2201/045 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/0173 ,  B81C2203/0109 ,  G02B26/0841

Abstract: An electrostatic drive type MEMS device and a manufacturing method thereof are provided, in which flattening the surface of a driving side electrode, improving performance, and furthering the improvements of the degree of freedom of designing in the manufacturing process are implemented. In addition, a GLV device using this MEMS device is provided, and further a laser display using this GLV device is also provided. The electrostatic drive type MEMS device includes a substrate side electrode and a beam having a driving side electrode driven by electrostatic attraction force or electrostatic repulsion force that acts between the substrate side electrode and driving side electrode, in which the substrate side electrode is formed of an impurities-doped conductive semiconductor region in a semiconductor substrate.

Abstract translation: 提供一种静电驱动型MEMS器件及其制造方法，其中，使驱动侧电极的表面变平，提高性能，进一步提高制造工艺中的设计自由度的提高。 此外，提供了使用该MEMS器件的GLV器件，并且还提供使用该GLV器件的激光器显示器。 静电驱动型MEMS器件包括基板侧电极和具有由基板侧电极和驱动侧电极之间作用的静电吸引力或静电排斥力驱动的驱动侧电极的光束，其中基板侧电极由 半导体衬底中的杂质掺杂导电半导体区域。