Abstract:
Radiation absorbing layers of epitaxially grown, photovoltaic materials areeposited in stacked relation on a substrate in alignment with a coincident axis of input radiation impinging on a common optically active surface area of a detector device formed by the stacked layers. Semi-insulating layers space the radiation absorbing layers to electrically separate the signal outputs respectively produced in response to impinging radiation limited to separate and distinct wavelengths within a common spectral range as a result of the interrelationships between bandgap energy properties of the layer materials.
Abstract:
Temperature measuring apparatus of the photometric type having a fiber optics device for conducting radiation to a signal producing detector. Provision is made for a purging fluid at the opposite end of the fiber optics device to keep foreign matter from accumulating.
Abstract:
Two photoelectric detector elements, having substantially different response wavelengths, are mounted in a housing in cascade relationship. The outer element is selected to be transparent to the response wavelength of the inner element and it is provided with an integral filter that is transmissive at the response wavelength of the inner element. Anti-reflective coatings are used to minimize reflective losses.
Abstract:
A photoconductive detector is formed in a single body of semiconductor material and is used for sensing electromagnetic radiation, such as infrared radiation. The photoconductive body has a cooling means proximate that body for maintaining the body at a predetermined quiescent temperature and also has output means connected to the body for receiving a signal from the body. Further included are heating means proximate said photoconductive body and adapted to heat the photoconductive body to a temperature above said quiescent temperature for a time sufficient to accelerate decay of the radiation produced signal.
Abstract:
High quality performance infrared photodetectors and a method for making them from a semiconductor material. The semiconductor material is irradiated with an electron beam to produce defect levels in a semiconductor material thereby improving the performance of the photodetectors.