公开(公告)号：US20080316248A1

公开(公告)日：2008-12-25

申请号：US12025229

申请日：2008-02-04

Applicant: Jun-ho LEE ,  Seong-nam JEON

Inventor： Jun-ho LEE ,  Seong-nam JEON

IPC: G01K13/00 ,  B41J29/393

CPC classification number: G01K1/026 ,  B41J2/04563 ,  B41J2/0458

Abstract: A method and apparatus to detect the temperature of an inkjet head are provided. A method of detecting the temperature of an inkjet head, comprising detecting an amount of printing data allocated to each of a plurality of unit head chips of the inkjet head, determining a detection frequency of temperature information on each of the plurality of unit head chips according to the detected amount of printing data, and detecting the temperature information on each of the plurality of unit head chips according to the determined detection frequency.

Abstract translation: 提供了一种用于检测喷墨头的温度的方法和装置。 一种检测喷墨头的温度的方法，包括检测分配给所述喷墨头的多个单元头芯片中的每一个的打印数据量，根据所述多个单元头芯片中的每一个确定温度信息的检测频率， 检测出的打印数据量，并根据所确定的检测频率检测多个单元头芯片中的每一个上的温度信息。

公开(公告)号：US07397829B2

公开(公告)日：2008-07-08

申请号：US11500919

申请日：2006-08-09

Applicant: Jae-ryung Yoo ,  Gi-bum Kim ,  Jun-ho Lee

Inventor： Jae-ryung Yoo ,  Gi-bum Kim ,  Jun-ho Lee

IPC: H01S3/10

CPC classification number: H01S5/141 ,  H01S3/0804 ,  H01S3/109 ,  H01S5/0207 ,  H01S5/041 ,  H01S5/183 ,  H01S5/18305

Abstract: Provided is a VECSEL capable of achieving an excellent efficiency of a SHG crystal and being manufactured in a compact size. The VECSEL includes a laser chip, an external mirror, an SHG crystal, a lens element, and a wavelength selective mirror. The laser chip generates a first wavelength light, and the external mirror is spaced from the laser chip to face the front side of the laser chip. The SHG crystal is located between the external mirror and the laser chip to double the frequency of the first wavelength light to make a second wavelength light. The lens element is located between the SHG crystal and the laser chip to allow the first wavelength light generated from the laser chip to converge at the SHG crystal, and the wavelength selective mirror is located between the SHG crystal and the lens element to transmit the first wavelength light and reflect the second wavelength light to the external mirror.

Abstract translation: 提供了能够实现SHG晶体的优异效率并且被制造成紧凑尺寸的VECSEL。 VECSEL包括激光芯片，外部反射镜，SHG晶体，透镜元件和波长选择镜。 激光芯片产生第一波长光，并且外部反射镜与激光芯片间隔开以面对激光芯片的前侧。 SHG晶体位于外部反射镜和激光芯片之间，使第一波长光的频率加倍以产生第二波长的光。 透镜元件位于SHG晶体和激光芯片之间，以使激光芯片产生的第一波长光在SHG晶体上会聚，并且波长选择镜位于SHG晶体和透镜元件之间，以传输第一个 将第二波长的光反射到外部反射镜。

公开(公告)号：US20080123699A1

公开(公告)日：2008-05-29

申请号：US11980350

申请日：2007-10-31

Applicant: Sang-moon Lee ,  Jun-ho Lee

Inventor： Sang-moon Lee ,  Jun-ho Lee

IPC: H01S5/34

CPC classification number: H01S5/041 ,  H01S5/0071 ,  H01S5/026 ,  H01S5/141 ,  H01S5/183 ,  H01S5/4056

Abstract: Provided is a pump laser integrated vertical external cavity surface emitting laser (VECSEL). The VECSEL may include a surface emitting laser unit including a first active layer having a multiple quantum well structure emitting light having a first wavelength, a reflective layer may be formed on the first active layer, and an external mirror may be disposed opposite to a lower surface of the first active layer and defining a cavity resonator together with the reflective layer. A pump laser unit may be formed on a part of the surface emitting laser unit and may have a perpendicular light emissive surface emitting a pump beam having a second wavelength for exciting the first active layer. A beam reflector may be formed on the light emissive surface of the pump laser unit and reflecta pump beam that is incident from the pump laser unit to the first active layer.

Abstract translation: 提供了一种泵浦激光器集成的垂直外腔表面发射激光器（VECSEL）。 VECSEL可以包括表面发射激光器单元，其包括具有发射具有第一波长的光的多重量子阱结构的第一有源层，反射层可以形成在第一有源层上，并且外部反射镜可以布置成与下部 第一有源层的表面并与反射层一起限定空腔谐振器。 泵激光单元可以形成在表面发射激光器单元的一部分上，并且可以具有发射具有用于激发第一有源层的第二波长的泵浦光束的垂直光发射表面。 光束反射器可以形成在泵激光单元的发光表面上，并且反射从泵激光单元入射到第一有源层的泵浦光束。

公开(公告)号：US20060061365A1

公开(公告)日：2006-03-23

申请号：US11234573

申请日：2005-09-22

Applicant: Jun-Ho Lee

Inventor： Jun-Ho Lee

IPC: G01N27/416 ,  H01M2/00

CPC classification number: G01R31/025 ,  G01R31/36 ,  H01M2/34

Abstract: A short circuit detection apparatus and method thereof for detecting a pin-to-pin short or a pin-to-ground short of a wireless communications terminal battery connector is described. The detection apparatus monitors the voltage level of the battery and indicates a pin-to-ground short when the battery voltage is at ground level, and indicates a pin-to-pin short when the battery level is slightly above ground. Upon detection of a ground, the short circuit detection apparatus indicates the presence of the short and of its type by a visual or audible indication or both.

Abstract translation: 描述了用于检测无线通信终端电池连接器的针对针脚短路或针对地短路的短路检测装置及其方法。 当电池电压处于地电平时，检测装置监视电池的电压电平并且指示针对地短路，并且当电池电平稍微高于地面时，指示针对引脚短路。 在检测到地面时，短路检测装置通过视觉或听觉指示或两者指示短路及其类型的存在。

公开(公告)号：US20050264160A1

公开(公告)日：2005-12-01

申请号：US11135037

申请日：2005-05-23

Applicant: Young Lee ,  Jun Choi ,  Jun Jeong ,  Ji-Won Kim ,  Young-Keun Lee ,  Young-Kwan Park ,  Jun-Ho Lee

Inventor： Young Lee ,  Jun Choi ,  Jun Jeong ,  Ji-Won Kim ,  Young-Keun Lee ,  Young-Kwan Park ,  Jun-Ho Lee

IPC: H01J1/62 ,  H01J9/24 ,  H01J61/30 ,  H01J63/04

CPC classification number: H01J9/247 ,  H01J61/305

Abstract: The present invention provides a flat fluorescent lamp. The flat fluorescent lamp comprises a single plate. Consequently, the flat fluorescent lamp is structurally safe, brightness of the flat fluorescent lamp is high, and efficiency of the flat fluorescent lamp is also high without the provision of other additional optical components. The present invention also provides a method of manufacturing such a flat fluorescent lamp.

Abstract translation: 本发明提供一种平面荧光灯。 平面荧光灯包括单个板。 因此，扁平荧光灯在结构上是安全的，平面荧光灯的亮度高，平面荧光灯的效率也高，而不需要提供其他附加的光学部件。 本发明还提供一种制造这种平板荧光灯的方法。

公开(公告)号：US20050112809A1

公开(公告)日：2005-05-26

申请号：US10881257

申请日：2004-06-30

Applicant: Myung Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

Inventor： Myung Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC: G02F1/136 ,  B23K26/06 ,  H01L21/00 ,  H01L21/20 ,  H01L21/26 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

Abstract: Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

Abstract translation: 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。