公开(公告)号：US12266668B2

公开(公告)日：2025-04-01

申请号：US17643938

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chongkwang Chang ,  Donghoon Khang ,  Jinyoung Kim ,  Kwangyoung Oh ,  Taehun Lee

IPC: H01L27/146

Abstract: An image sensor includes a substrate having first and second surfaces. A separation structure penetrates the substrate. Photoelectric conversion device regions are spaced apart from each other in the substrate. Color filters are disposed on the second surface of the substrate. Microlenses are disposed on the color filters. The separation structure includes lower and upper separation patterns, first line portions that run parallel to each other, and second line portions that perpendicularly intersect the first line portions. An upper surface of the lower separation pattern or a lower surface of the upper separation pattern has a wavy or sawtooth shape. In intersecting regions in which the first line portions and the second line portions intersect, a vertical length of one of the lower separation pattern and the upper separation pattern is about 2 to 10 times greater than a vertical length of the other.

公开(公告)号：US12266659B2

公开(公告)日：2025-04-01

申请号：US17843263

申请日：2022-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keunhwi Cho ,  Jinkyu Kim ,  Myunggil Kang ,  Dongwon Kim ,  Jaechul Kim ,  Sanghoon Lee

IPC: H01L27/118 ,  H03K19/20

Abstract: A semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.

公开(公告)号：US12266609B2

公开(公告)日：2025-04-01

申请号：US17680808

申请日：2022-02-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung Jun Jeon ,  Kwang Jin Moon ,  Son-Kwan Hwang

IPC: H01L23/538 ,  H01L25/065

Abstract: A semiconductor package includes a first semiconductor chip, which includes a first semiconductor substrate and a first bonding layer on the first semiconductor substrate. A second semiconductor chip includes a second semiconductor substrate, a second bonding layer bonded to the first bonding layer, and a chip-through-via which penetrates the second semiconductor substrate and is connected to the second bonding layer. A passivation film extends along an upper side of the second semiconductor chip and does not extend along side-faces of the second semiconductor chip. The chip-through-via penetrates the passivation film. A multiple-gap-fill film extends along the upper side of the first semiconductor chip, the side faces of the second semiconductor chip, and the side faces of the passivation film. The multiple-gap-fill films includes an inorganic filling film and an organic filling film which are sequentially stacked on the first semiconductor chip.

公开(公告)号：US12266058B2

公开(公告)日：2025-04-01

申请号：US17897608

申请日：2022-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinseon Yoo ,  Sujin Lee ,  Minkyu Jung ,  Jongwoo Jung

IPC: G09G5/00 ,  G02B1/04 ,  G06T19/00 ,  G02B27/01

Abstract: An electronic device according to various embodiments may include: a frame, a window supported by the frame, a display configured to output visual information to the window, a camera disposed in the frame configured to photograph a front of the frame, a communication module comprising communication circuitry, a memory, and a processor. The memory may store instructions that, when executed, cause the processor to: establish a communication connection with an external device through the communication module, acquire display attribute information of at least one first display connected to the external device, and display at least one virtual object having a same display attribute as the at least one first display in at least a portion of an area corresponding to a field of view of a user wearing the electronic device, based on the acquired display attribute information. The display attribute information may include at least one of a magnification, a resolution, a display orientation, or a use or not of multiple displays, of the first display.

公开(公告)号：US12265835B2

公开(公告)日：2025-04-01

申请号：US18322919

申请日：2023-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinshik Bae ,  Kwanjin Jung ,  Hyunchul Seok ,  Daehyun Cho ,  Hanju Bae ,  Mooyoung Kim ,  Minjung Kim

IPC: G06F9/451 ,  G06F1/16

Abstract: An electronic device may include: a housing including a first housing and a second housing movable with respect to the first housing; a flexible display in which a display area for displaying a screen is expanded or reduced as the second housing moves with respect to the first housing; a memory; and a processor, wherein the processor is configured to: identify a change in the size of the display area on the basis of the movement of the second housing relative to the first housing; determine an application to be preloaded from among a plurality of applications on the basis of the identified size of the display area; load, into the memory, a preload process including some of resources for executing the determined application to be preloaded; and, in response to the occurrence of an event associated with the execution of the application to be preloaded, load an activity for the execution of the application by using the loaded preload process.

公开(公告)号：US12265741B2

公开(公告)日：2025-04-01

申请号：US18345492

申请日：2023-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonik Seo ,  Dong-Uk Ryu ,  Sungduk Cho

IPC: G06F3/06

Abstract: A method including updating memory allocation information of a UVM based on block information of model data blocks used for an execution of a deep learning model by a deep learning framework, and performing a least recently used (LRU) eviction based on the updated memory allocation information.

公开(公告)号：US12265200B2

公开(公告)日：2025-04-01

申请号：US17512658

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haeri Park Hanania ,  Hyuck Choo

IPC: G02B1/00 ,  A61B3/16 ,  G01L11/02 ,  G02B5/00

Abstract: The present example embodiment relates generally to creating a specific nanostructure on a substrate to improve the angle independence of a surface plasmon resonance mode. It may comprise a metamaterial structure comprising nanostructures located in a pattern on or within a substrate. The nanostructures may be paraboloid shaped and periodic.

公开(公告)号：US12264431B2

公开(公告)日：2025-04-01

申请号：US17309347

申请日：2019-10-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Pil Seo ,  Eui Young Chang ,  Seong-Min Oak

IPC: D06F58/12 ,  D06F58/20

Abstract: The clothes care apparatus includes a main body having a clothes care compartment, a blowing device configured such that an airflow is formed inside the clothes care compartment, a hanger configured to hang clothes in the clothes care compartment and allow the airflow generated by the blowing device to flow through the inside of the hanger, a hanger plate on which the hanger is detachably provided, and a tilting device configured to tilt the hanger plate.

公开(公告)号：US20250107461A1

公开(公告)日：2025-03-27

申请号：US18753575

申请日：2024-06-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changyup PARK ,  Young Jae Kang ,  DongGeon Gu ,  Bonwon Koo ,  Segab Kwon ,  Dongho Ahn ,  Changseung Lee ,  Yongnam Ham

IPC: H10N70/00 ,  C22C30/00 ,  H10B63/00

Abstract: Provided are variable resistance materials and a variable resistance memory devices including the same. The variable resistance memory device includes: a first electrode; a first variable resistance material on the first electrode; and a second electrode on the first variable resistance material. The first variable resistance material includes germanium, antimony, tellurium, carbon, and sulfur and is expressed by CpSqGexSbyTez, where p is an atomic concentration of carbon, q is an atomic concentration of sulfur, x is an atomic concentration of germanium, y is an atomic concentration of antimony, and z is an atomic concentration of tellurium, wherein a sum of p, q, x, y, and z equals 1, wherein each of p, q, x, y, and z is greater than zero, and wherein q is greater than 0.01 and is less than or equal to about 0.2.

公开(公告)号：US20250107208A1

公开(公告)日：2025-03-27

申请号：US18976637

申请日：2024-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Seunggeol NAM ,  Keunwook SHIN ,  Dohyun LEE

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.