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公开(公告)号:US20220269432A1
公开(公告)日:2022-08-25
申请号:US17662993
申请日:2022-05-11
Applicant: Micron Technology, Inc.
Inventor: Hyun Yoo Lee , Kang-Yong Kim
IPC: G06F3/06 , G11C11/406 , G11C11/408 , G11C11/4096
Abstract: Methods, apparatuses, and systems related to combining and utilizing multiple memory circuits having complementary characteristics are described. An apparatus may include a first memory circuit having a first emphasized characteristic and a second memory circuit having a second emphasized characteristic. The first and second memory circuits may be connected in parallel and to a common interface configured to communicate data between the apparatus and an external device.
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公开(公告)号:US20220139448A1
公开(公告)日:2022-05-05
申请号:US17513090
申请日:2021-10-28
Applicant: Micron Technology, Inc.
Inventor: Kang-Yong Kim , Hyun Yoo Lee
IPC: G11C11/406 , G11C7/10
Abstract: Systems, apparatuses, and methods related to a memory device, such as a low-power dynamic random-access memory (DRAM), and an associated host device are described. The memory device includes control circuitry that can determine an operational status of the memory device (e.g., whether the memory device is currently performing a self-refresh operation). The control circuitry can also transmit a signal indicative of the operational status to the host device in response to receiving a command directing the memory device to exit a self-refresh mode. The host device can operate based on the signal. The signal may therefore allow the memory device, the host device, or both to manage operations, including whether to send, receive, or process commands and data read/write requests during times that may be associated with self-refresh operations.
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公开(公告)号:US11262941B2
公开(公告)日:2022-03-01
申请号:US16413475
申请日:2019-05-15
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kang-Yong Kim , Hyun Yoo Lee , John D. Porter
IPC: G06F3/06 , G11C11/408 , G11C11/4076 , G11C11/4074
Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. An example method includes receiving a data clock signal responsive to receiving a timing command, performing an access operation responsive to receiving an access command associated with the timing command, providing an access data clock signal based on the data clock signal, and providing an access data clock signal based on the data clock signal. The access command may be separated in time from the associated timing command by at least one clock cycle of a system clock signal. In some examples, the access command may precede the associated timing command or may follow the associated timing command. In some examples, the access command may immediately follow or precede the associated timing command.
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公开(公告)号:US20220035568A1
公开(公告)日:2022-02-03
申请号:US17390093
申请日:2021-07-30
Applicant: Micron Technology, Inc.
Inventor: Chinnakrishnan Ballapuram , Kang-Yong Kim , Saira Samar Malik , Taeksang Song
Abstract: Methods, systems, and devices for transaction management using metadata are described. In some examples, a memory device may include a volatile memory, and a non-volatile memory, which may have different access latencies. The memory device may receive from a host device a read command for data located at an address of the non-volatile memory. In response to the read command, the memory device and may determine whether the data is stored in the volatile memory. The memory device may then transmit, to the host device data and according to an expected latency, a set of data and an indication of whether the set of data was previously requested by the host device or unrequested by the host device. In some examples, the memory device may also transmit an identifier associated with the read command and a hash of the address.
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公开(公告)号:US10984844B2
公开(公告)日:2021-04-20
申请号:US16452436
申请日:2019-06-25
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Hyun Yoo Lee , Kang-Yong Kim
IPC: G11C7/22 , G11C7/10 , G11C11/4076
Abstract: Apparatuses and methods for determining a phase relationship between an input clock signal and a multiphase clock signal are disclosed. An example apparatus includes a clock path configured to receive a clock signal and provide internal clock signals and a command path configured to receive a command and propagate the command through the command path responsive to the internal clock signals and provide an internal command having a timing that reflects a timing of the clock signal. The example apparatus further includes a data clock path configured to receive a data clock signal and provide multiphase clock signals based on the data clock signal and provide a delayed multiphase clock signal, and further includes a clock synchronization circuit configured to receive the delayed multiphase clock signal and latch a logic level of the delayed multiphase clock signal responsive to the internal command.
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公开(公告)号:US10915474B2
公开(公告)日:2021-02-09
申请号:US16035414
申请日:2018-07-13
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kang-Yong Kim , Dean Gans
Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.
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197.
公开(公告)号:US10811064B2
公开(公告)日:2020-10-20
申请号:US16167326
申请日:2018-10-22
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kang-Yong Kim
IPC: G11C7/22 , G11C11/4076 , H03K5/156 , G11C7/10
Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.
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公开(公告)号:US10789186B2
公开(公告)日:2020-09-29
申请号:US16657474
申请日:2019-10-18
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kang-Yong Kim , Dean Gans
Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.
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199.
公开(公告)号:US10600459B2
公开(公告)日:2020-03-24
申请号:US16167340
申请日:2018-10-22
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kang-Yong Kim
IPC: G11C8/00 , G11C7/22 , G11C11/4076 , H03K5/156 , G11C7/10
Abstract: Apparatuses and methods for setting a duty cycler adjuster for improving clock duty cycle are disclosed. The duty cycle adjuster may be adjusted by different amounts, at least one smaller than another. Determining when to use the smaller adjustment may be based on duty cycle results. A duty cycle monitor may have an offset. A duty cycle code for the duty cycle adjuster may be set to an intermediate value of a duty cycle monitor offset. The duty cycle monitor offset may be determined by identifying duty cycle codes for an upper and for a lower boundary of the duty cycle monitor offset.
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公开(公告)号:US20200050564A1
公开(公告)日:2020-02-13
申请号:US16657474
申请日:2019-10-18
Applicant: MICRON TECHNOLOGY, INC.
Inventor: Kang-Yong Kim , Dean Gans
Abstract: Apparatuses and methods including memory commands for semiconductor memories are described. A controller provides a memory system with memory commands to access memory. The commands are decoded to provide internal signals and commands for performing operations, such as operations to access the memory array. The memory commands provided for accessing memory may include timing command and access commands. Examples of access commands include a read command and a write command. Timing commands may be used to control the timing of various operations, for example, for a corresponding access command. The timing commands may include opcodes that set various modes of operation during an associated access operation for an access command.
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