摘要:
A film deposition method and film deposition system for depositing a halogen compound film, capable of depositing such a film while suppressing abuse that occurs due to deficiency of a halogen element even if the halogen element is dissociated from a film material. The halogen compound film is deposited through a process including: evaporating a film material comprising a halogen compound by means of an evaporation source 3; ionizing the evaporated film material with a radio frequency power outputted from a radio frequency power supply unit 11 and supplied through a substrate holder 2; and causing the ionized film material deposit on the substrate 5. A bias voltage outputted from a bias power supply unit 12 and applied to the substrate holder 2 causes halogen ions dissociated from ions of the halogen compound to be incorporated into the film being deposited on the substrate 5.
摘要:
The image heating apparatus for heating an image formed on a recording material includes a heater having a substrate and first and second heat generating resistors, most of the region of said first heat generating resistor having smaller resistance value per unit length toward an end in the longitudinal direction of said substrate, and most of the region of said second heat generating resistor having larger resistance value per unit length toward the end part; wherein a safety element can control electrical power supply to said first heat generating resistor and electrical power supply to said second heat generating resistor individually, and operates in response to the heat of said heater to cut off electrical power supply to said first and second heat generating resistors; and wherein only said second heat generating resistor in said first and second heat generating resistors has a high resistance part high resistance part corresponding to said safety element in a part in the longitudinal direction thereof; and consequently, this can provide an image heating apparatus that can cut off electrical power supply quickly when a heater has run away and to provide a heater to be used in this apparatus.
摘要:
A phase adjusting circuit includes a meandering inductor provided on the surface of a base substrate, and a zero-ohm resistor mounted on two parallel line portions with one parallel line portion provided therebetween. The parallel line portions of the meandering inductor are configured such that their lengths in the vertical direction sequentially decrease. By changing a combination of parallel line portions on which the zero-ohm resistor is mounted, the substantial line length of the inductor is changed, such that the inductance changes. By changing the inductance of the inductor, the amount of phase adjustment in the phase adjusting circuit is changed.
摘要:
To provide a fan selection device capable of selecting a fan using a small amount data prepared in advance and also using simple computations. A required ventilation flow quantity is computed by computing means 4 when predicted total electric power consumption and a predicted air temperature rise are entered into a predetermined computational expression. Parameter range determining means 5 determines a parameter range of a proper flow quantity ratio necessary for cooling. Required flow quantity computing means 7 computes a minimum required flow quantity and a maximum required flow quantity by dividing the required ventilation flow quantity by the upper and lower limit values of the parameter range of the proper flow quantity ratio, respectively. Selection means 8 searches for a fan that produces the maximum flow quantity necessary for obtaining a flow quantity that falls between the minimum required flow quantity and the maximum required flow quantity, from a database 9, and selects the fan as the required fan.
摘要:
An erasing current is distributed to reduce a load of an internal power circuit and to decrease the number of drivers for erase. A semiconductor data processing device has: a memory array having nonvolatile memory cells arrayed in a matrix and divided into a plurality of erase blocks each instructed to be erased together; and a control circuit, wherein the control circuit controls both of two kinds of erasing voltages applied to the nonvolatile memory cell in the erase block instructed to be erased together to select an erase sector from the erase block for performing erase for each erase sector, thereby performing the erase for each erase sector in time division. Time division erase can distribute an erasing current. Two kinds of erasing voltages are used to select the erase sector. No specific drivers need be provided for each erase sector.
摘要:
The present invention aims at expanding an operation range for allowing a compression ignition combustion operation. The present invention provides an internal combustion engine of a compression ignition type that is capable of operating with a compression ignition combustion scheme in a given operation range. The ECU of the internal combustion engine detects an operating condition of the internal combustion engine and determines, according to the detected operating condition, which mode is to be used operate the internal combustion engine, a 4-cycle compression ignition mode or a 2-cycle compression ignition mode. The ECU controls the internal compression engine to perform the compression ignition mode determined. According to the present invention, the compression ignition combustion operation is switched from 4-cycle to 2-cycle when the operating condition of the internal combustion engine is in such state that the 4-cycle compression ignition mode cannot be performed, fro example, when the exhaust temperature is low.
摘要:
A temperature compensated piezoelectric oscillator that is capable of reducing the deterioration of phase noise caused by electrical-current noise, and an electronic device using the temperature compensated piezoelectric oscillator is arranged such that a connection point of a first resistor and a second resistor, which are connected in series between an external frequency control terminal and ground, is connected to the cathode of a variable capacitance diode. Furthermore, a capacitor for bypassing current noise, in which the impedance at a frequency that is lower than the oscillation frequency is sufficiently low so as to be capable of bypassing electrical-current noise generated from the resistors to ground, is provided between the connection point of the resistors and the ground. Electrical-current noise applied to the variable capacitance diode can be reduced, and the phase noise of the oscillation signal can be reduced.
摘要:
A glass substrate for a magnetic disk contains a transition metal. The substrate, which is subjected to formation of zone texturing by irradiating the substrate with a laser beam, has a high mechanical strength even if it is not chemically strengthened. The glass substrate contains a transition metal element and has a transmittance of 10% of less for light in a wavelength range of 300 to 2000 nm. The surface roughness of an information recording surface portion thereof is 2.0 nm or less. In addition to a transition metal element, the glass substrate may include a rare earth metal element.
摘要:
A glass substrate for a magnetic disk contains a transition metal. The substrate, which is subjected to formation of zone texturing by irradiating the substrate with a laser beam, has a high mechanical strength even if it is not chemically strengthened. The glass substrate contains a transition metal element and has a transmittance of 10% of less for light in a wavelength range of 300 to 2000 nm. The surface roughness of an information recording surface portion thereof is 2.0 nm or less. In addition to a transition metal element, the glass substrate may include a rare earth metal element.
摘要:
A data processing device which selects either emission of electrons from a nonvolatile memory cell or injection of electrons into it for each bit. A memory array includes a plurality of nonvolatile memory cells each having a pair of a first MOS transistor and a second MOS transistor where the first transistor has a charge retention layer and a memory gate and is used for data storage and the second transistor has a control gate and selectively connects the first transistor to a bit line. When negative voltage is applied to a memory gate, electrons held by a charge retention layer are emitted through hot carriers generated in a nonvolatile memory cell channel region for erasing; and when positive voltage is applied to the memory gate, electrons are injected into the charge retention layer through hot carriers generated in the nonvolatile memory cell channel region for writing and controls the generation and suppression of hot carriers by means of bit line voltage on each bit line.