公开(公告)号：US20080278765A1

公开(公告)日：2008-11-13

申请号：US12091290

申请日：2006-04-29

Applicant: Haifeng Li ,  Bin Yang

Inventor： Haifeng Li ,  Bin Yang

IPC: H04N1/405

CPC classification number: H04N1/40087 ,  H04N1/4053

Abstract: Disclosed is a method for processing FM-AM mixed halftone images on a multi-bit depth imaging apparatus, which relates to a method for producing halftone dots in the field of image hard copying. In the prior art, since it is hard to avoid the impact of the error diffusion for the output apparatus to control the mixed dots with multi-bit imaging depth based on the error diffusion, the output of the mixed dots with multi-bit imaging depth cannot satisfy requirements of the apparatus. According to the method of the present invention, the dynamic algorithm for controlling the multi-bit mixed dots is used for screening based on the existing mixed screening process using dual-feedback error diffusion. Furthermore, multi-bit halftone images with high quality and rich gradations can be output by the multi-bit depth imaging apparatus. The method of the present invention can solve the phenomenon of sawtooth in the margins of the mixed dots output by the conventional single-bit apparatus and obtain the FM-AM mixed dots with the effect of high resolution and continuous gradations, which are output under low resolution.

Abstract translation: 公开了一种在多位深度成像装置上处理FM-AM混合半色调图像的方法，涉及在图像硬拷贝领域中制造半色调点的方法。 在现有技术中，由于难以避免输出装置的误差扩散对基于误差扩散控制具有多位成像深度的混合点的影响，所以具有多位成像深度的混合点的输出 不能满足设备的要求。 根据本发明的方法，基于使用双反馈误差扩散的现有混合筛选过程，将用于控制多比特混合点的动态算法用于筛选。 此外，多比特深度成像装置可以输出具有高质量和丰富等级的多比特半色调图像。 本发明的方法可以解决常规单位装置输出的混合点边缘中的锯齿现象，并获得具有高分辨率和连续灰度的FM-AM混合点，其输出低 解析度。

公开(公告)号：US20080058574A1

公开(公告)日：2008-03-06

申请号：US11469847

申请日：2006-09-01

Applicant: Anna Lee Tonkovich ,  Bin Yang ,  Steven T. Perry ,  Terry Mazanec ,  Ravi Arora ,  Francis P. Daly ,  Richard Long ,  Thomas D. Yuschak ,  Paul W. Neagle ,  Amanda Glass

Inventor： Anna Lee Tonkovich ,  Bin Yang ,  Steven T. Perry ,  Terry Mazanec ,  Ravi Arora ,  Francis P. Daly ,  Richard Long ,  Thomas D. Yuschak ,  Paul W. Neagle ,  Amanda Glass

IPC: C07C5/333

CPC classification number: C07C5/48 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00788 ,  B01J2219/00822 ,  B01J2219/00824 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00869 ,  B01J2219/00873 ,  B01J2219/00891 ,  B01J2219/00984 ,  C01B3/386 ,  C01B3/50 ,  C01B2203/0261 ,  C01B2203/04 ,  C01B2203/048 ,  C01B2203/1035 ,  C01B2203/1041 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1247 ,  C07C2523/42 ,  C07C2523/44 ,  C07C2523/52 ,  C07C11/04

Abstract: Methods of oxidative dehydrogenation are described. Surprisingly, Pd and Au alloys of Pt have been discovered to be superior for oxidative dehydrogenation in microchannels. Methods of forming these catalysts via an electroless plating methodology are also described. An apparatus design that minimizes heat transfer to the apparatus' exterior is also described.

Abstract translation: 描述了氧化脱氢方法。 令人惊奇的是，已经发现Pt的Pd和Au合金对于微通道中的氧化脱氢是优越的。 还描述了通过化学镀方法形成这些催化剂的方法。 还描述了最小化到设备外部的热传递的设备设计。

公开(公告)号：US07280617B2

公开(公告)日：2007-10-09

申请号：US10734707

申请日：2003-12-11

Applicant: Michael Cujé ,  Stefan Eibl ,  Stefan Herzinger ,  Martin Krüger ,  Xiaofeng Wu ,  Bin Yang

Inventor： Michael Cujé ,  Stefan Eibl ,  Stefan Herzinger ,  Martin Krüger ,  Xiaofeng Wu ,  Bin Yang

IPC: H04L25/10

CPC classification number: H04B1/30

Abstract: In a method to compensate for a step DC disturbance (1) in a baseband signal in a homodyne radio receiver, the time profile of the step DC disturbance within a burst is determined. In order to produce a step-corrected baseband signal, the determined time profile (2) is then calculated from the digitized baseband signal.

Abstract translation: 在补偿在零差无线电接收机中的基带信号中的步进DC干扰（1）的方法中，确定突发内的步骤DC干扰的时间曲线。 为了产生步进校正的基带信号，则从数字化的基带信号计算确定的时间分布（2）。

公开(公告)号：US07226741B2

公开(公告)日：2007-06-05

申请号：US10688100

申请日：2003-10-17

Applicant: Hui Zhang ,  Roger J. Pomerantz ,  Bin Yang

Inventor： Hui Zhang ,  Roger J. Pomerantz ,  Bin Yang

IPC: C12Q1/68

CPC classification number: C07K14/005 ,  A61K38/00 ,  C12N2740/16322 ,  Y10S530/826

Abstract: One approach to treating individuals infected with HIV-1 is to administer to such individuals compounds that directly interfere with and intervene in the machinery by which HIV-1 replicates itself within human cells. Although the specific role of HIV-1 viral protein Vif in the viral life cycle is not known, the vif gene is essential for the pathogenic replication of lentiviruses in vivo. The present invention relates to a method for treating an individual exposed to or infected with HIV-1. Individuals identified as being exposed to or infected by HIV-1 are administered a therapeutically effective amount of one or more compounds that inhibit or prevent replication of said HIV-1 by interfering with the replicative or other essential functions of HIV-1 viral protein Vif by interactively blocking the multimerization domain of Vif, thereby preventing multimerization of Vif protein, which is important for Vif function in the lentivirus life cycle. In preferred embodiments, the compound or compounds that interactively block the multimerization domain of Vif are Vif antagonists. Pharmaceutical compositions comprising these compounds are also disclosed.

Abstract translation: 治疗感染HIV-1的个体的一种方法是向这些个体施用直接干扰和干预HIV-1在人细胞内自身复制的机制的化合物。 虽然HIV-1病毒蛋白Vif在病毒生命周期中的具体作用尚不清楚，但vif基因对于体内慢病毒的致病性复制至关重要。 本发明涉及用于治疗暴露于或感染HIV-1的个体的方法。 被鉴定为暴露于HIV-1或感染HIV-1的个体通过干扰HIV-1病毒蛋白Vif的复制或其它基本功能来抑制或阻止所述HIV-1复制的治疗有效量的一种或多种化合物 交互阻断Vif的多聚化结构域，从而阻止Vif蛋白的多聚化，这对于慢病毒生命周期中的Vif功能是重要的。 在优选的实施方案中，交互式阻断Vif的多聚化结构域的化合物是Vif拮抗剂。 还公开了包含这些化合物的药物组合物。

公开(公告)号：US20070096146A1

公开(公告)日：2007-05-03

申请号：US11641507

申请日：2006-12-19

Applicant: Jeff Bude ,  Peide Ye ,  Kwok Ng ,  Bin Yang

Inventor： Jeff Bude ,  Peide Ye ,  Kwok Ng ,  Bin Yang

IPC: H01L29/43 ,  H01L29/74 ,  H01L31/111

CPC classification number: H01L29/4983 ,  H01L29/812

Abstract: A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel. The overlapping gate/field plate or p-type pocket extend into the drift region of the device, controlling the electrical potential of the device in a manner that provides the desired control of the electrical potential in the drift region.

公开(公告)号：US20060275185A1

公开(公告)日：2006-12-07

申请号：US11400056

申请日：2006-04-07

Applicant: Anna Tonkovich ,  Bin Yang ,  Steven Perry ,  Sean Fitzgerald ,  Ravi Arora ,  Robert Luzenski ,  Thomas Yuschak

Inventor： Anna Tonkovich ,  Bin Yang ,  Steven Perry ,  Sean Fitzgerald ,  Ravi Arora ,  Robert Luzenski ,  Thomas Yuschak

IPC: B01J19/00 ,  H01L31/00 ,  B01L3/02

CPC classification number: F28F13/06 ,  B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00822 ,  B01J2219/00824 ,  B01J2219/00833 ,  B01J2219/00835 ,  B01J2219/0086 ,  B01J2219/00889 ,  B01J2219/00891 ,  B01J2219/00995 ,  B01L3/502746 ,  B01L2200/027 ,  B01L2300/0864 ,  B01L2300/0887 ,  B01L2400/0487 ,  B01L2400/086 ,  F28F2260/02 ,  Y10T137/0396

Abstract: The invention provides apparatuses and techniques for controlling flow between a manifold and two or more connecting microchannels. Flow between plural connecting microchannels, that share a common manifold, can be made more uniform by the use of flow straighteners and distributors that equalize flow in connecting channels. Alternatively, flow can be made more uniform by sections of narrowed diameter within the channels. Methods of making apparatus and methods of conducting unit operations in connecting channels are also described.

Abstract translation: 本发明提供用于控制歧管和两个或更多个连接微通道之间的流动的装置和技术。 通过使用均衡连接通道中的流动的流平衡器和分配器，可以使共享共同歧管的多个连接微通道之间的流动更均匀。 或者，可以通过通道内的变窄直径的部分使流动更均匀。 还描述了在连接通道中进行单元操作的装置和方法的方法。

公开(公告)号：US07092706B2

公开(公告)日：2006-08-15

申请号：US10412086

申请日：2003-04-11

Applicant: Bin Yang

Inventor： Bin Yang

IPC: H04Q7/20

CPC classification number: H03G3/3052 ,  H03G3/3036 ,  H04B17/318 ,  H04L25/0202

Abstract: A signal strength compensation unit for mobile radio receivers is connected upstream of the channel estimator and the channel equalizer and compensates for, in particular, the great, brief signal strength fluctuations within a data burst. Likewise, a method for signal strength compensation compensates for brief signal strength fluctuations within the data burst. To these ends, a signal strength average is determined from the signal strengths for the previously received data symbols. The current signal is then aligned with this signal strength average. The inventive signal strength compensation allows the bit error rate during data equalization to be significantly reduced.

Abstract translation: 用于移动无线电接收机的信号强度补偿单元连接在信道估计器和信道均衡器的上游，并特别补偿数据脉冲串内的大的短暂的信号强度波动。 类似地，信号强度补偿的方法补偿数据突发内的短暂的信号强度波动。 为此，从先前接收的数据符号的信号强度确定信号强度平均值。 电流信号然后与该信号强度平均值对齐。 本发明的信号强度补偿允许数据均衡期间的误码率显着降低。

公开(公告)号：US20060071250A1

公开(公告)日：2006-04-06

申请号：US10948897

申请日：2004-09-24

Applicant: Jeff Bude ,  Peide Ye ,  Kwok Ng ,  Bin Yang

Inventor： Jeff Bude ,  Peide Ye ,  Kwok Ng ,  Bin Yang

IPC: H01L29/76

CPC classification number: H01L29/4983 ,  H01L29/812

Abstract: A field effect transistor configured for use in high power applications and a method for its fabrication is disclosed. The field effect transistor is formed of III-V materials and is configured to have a breakdown voltage that is advantageous for high power applications. The field effect transistor is so configured by determining the operating voltage and the desired breakdown voltage for that operating voltage. A peak electric field is then identified that is associated with the operating voltage and desired breakdown voltage. The device is then configured to exhibit the identified peak electric field at that operating voltage. The device is so configured by selecting device features that control the electrical potential in the device drift region is achieved. These features include the use of an overlapping gate or field plate in conjunction with a barrier layer overlying the device channel, or a p-type pocket formed in a region of single-crystal III-V material formed under the device channel. The overlapping gate/field plate or p-type pocket extend into the drift region of the device, controlling the electrical potential of the device in a manner that provides the desired control of the electrical potential in the drift region.

公开(公告)号：US07017103B2

公开(公告)日：2006-03-21

申请号：US10336556

申请日：2003-01-03

Applicant: Peter Bohnhoff ,  Burkhard Becker ,  Bin Yang

Inventor： Peter Bohnhoff ,  Burkhard Becker ,  Bin Yang

IPC: H03M13/03

CPC classification number: H03M13/6331 ,  H03M13/4107 ,  H03M13/6502 ,  H03M13/6505 ,  H03M13/6569 ,  H04L25/03197

Abstract: A Viterbi equalizer for equalization of a data signal transmitted via a channel that is subject to interference has at least one add-compare-select unit (ACS), which carries out an ACS operation for each channel state in a time step k. Furthermore, the equalizer has a unit for calculating metric increments in advance and for storing the metric increments. The calculation unit calculates in advance the metric increments relating to all the transitions from a state which can be predetermined in the time step k to the states which can be reached by the transitions in the time step k+1. The metric increments are retained in an output memory such that they can be called up for utilization in the ACS unit.

Abstract translation: 经由经受干扰的信道发送的数据信号的均衡的维特比均衡器具有至少一个加法比较选择单元（ACS），其在时间步长k中对每个信道状态执行ACS操作。 此外，均衡器具有用于预先计算度量增量并用于存储度量增量的单元。 计算单元预先计算与从时间步长k中可以预定的状态到时间步长k + 1中的转变可以达到的状态的所有转换相关的度量增量。 度量增量保留在输出存储器中，使得它们可被调用以在ACS单元中使用。

公开(公告)号：US06825080B1

公开(公告)日：2004-11-30

申请号：US10677830

申请日：2003-10-02

Applicant: Bin Yang ,  Sanford Chu ,  Wensheg Qian ,  Tan Li Jia ,  Chang Chuan Hu

Inventor： Bin Yang ,  Sanford Chu ,  Wensheg Qian ,  Tan Li Jia ,  Chang Chuan Hu

IPC: H01L218242

CPC classification number: H01L28/90 ,  H01L21/76838

Abstract: A method of manufacturing a MIM capacitor which is characterized as follows. We provide a semiconductor structure having a first region and a capacitor region. Next we form a first conductive layer over the semiconductor structure. The first conductive layer is patterned to form a plurality of trenches in the capacitor region. We form a capacitor dielectric layer over the first conductive layer. We form a top plate over the capacitor dielectric layer in the capacitor region. The first conductive layer in the first region is patterned to form conductive patterns and a bottom plate. An interlevel dielectric layer is formed over the first conductive layer and top plate.

Abstract translation: 一种MIM电容器的制造方法，其特征如下。 我们提供具有第一区域和电容器区域的半导体结构。 接下来，我们在半导体结构上形成第一导电层。 图案化第一导电层以在电容器区域中形成多个沟槽。 我们在第一导电层上形成电容器电介质层。 我们在电容器区域中的电容器介质层上形成顶板。 将第一区域中的第一导电层图案化以形成导电图案和底板。 在第一导电层和顶板之上形成层间电介质层。