Display with light-emitting diodes
    211.
    发明授权

    公开(公告)号:US11232748B2

    公开(公告)日:2022-01-25

    申请号:US17222844

    申请日:2021-04-05

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

    Displays with silicon and semiconducting oxide thin-film transistors

    公开(公告)号:US11177291B2

    公开(公告)日:2021-11-16

    申请号:US17224305

    申请日:2021-04-07

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Display With Light-Emitting Diodes
    213.
    发明申请

    公开(公告)号:US20210225283A1

    公开(公告)日:2021-07-22

    申请号:US17222844

    申请日:2021-04-05

    Applicant: Apple Inc.

    Abstract: A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

    Displays with multiple refresh rate modes

    公开(公告)号:US10923012B1

    公开(公告)日:2021-02-16

    申请号:US16814879

    申请日:2020-03-10

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display. The display may include display driver circuitry that is configured to provide image data to columns of pixels and gate driver circuitry that is configured to provide control signals to rows of pixels. The display may be operable at a native refresh rate that is equal to the highest refresh rate at which the display has full resolution. The display may also be operable in a high refresh rate mode with a high refresh rate that is twice (or some other scaling factor greater than) the native refresh rate. To enable operation at the high refresh rate mode, vertical resolution of the display may be sacrificed. In other words, rows of pixels may be grouped together into effective rows that are then scanned in sequence. The gate driver circuitry may be formed as thin-film transistor circuitry or from gate driver integrated circuits.

    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

    公开(公告)号:US20200335528A1

    公开(公告)日:2020-10-22

    申请号:US16917601

    申请日:2020-06-30

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Displays with silicon and semiconducting oxide thin-film transistors

    公开(公告)号:US10741588B2

    公开(公告)日:2020-08-11

    申请号:US16678599

    申请日:2019-11-08

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Displays With Silicon and Semiconducting Oxide Thin-Film Transistors

    公开(公告)号:US20200075636A1

    公开(公告)日:2020-03-05

    申请号:US16678599

    申请日:2019-11-08

    Applicant: Apple Inc.

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Self-emissive display with switchable retarder for high contrast

    公开(公告)号:US10576081B2

    公开(公告)日:2020-03-03

    申请号:US14986148

    申请日:2015-12-31

    Applicant: Apple Inc.

    Abstract: Systems and electronic displays with improved contrast even under bright-light conditions are provided. Such an electronic display may include a self-emissive pixel (e.g., OLED or μ-LED) with a corresponding liquid crystal switchable retarder pixel. A liquid crystal layer of the switchable retarder pixel may be tuned to an “on” state or an “off” state. In the “on” state, the switchable retarder pixel may allow outside light that enters the pixel to reflect back out of the pixel. This may add to the amount of light that appears to be emitted from that pixel. In the “off” state, the switchable retarder pixel may block the outside light that enters the pixel from reflecting back out of the pixel. This may reduce the amount of light that appears to be emitted from that pixel. Selectively controlling the switchable retarder pixels may allow for increased contrast even under bright-light conditions.

    Displays with series-connected switching transistors

    公开(公告)号:US10388239B2

    公开(公告)日:2019-08-20

    申请号:US16144741

    申请日:2018-09-27

    Applicant: Apple Inc.

    Abstract: A display may have an array of light-emitting diode pixels or pixels containing portions of a liquid crystal layer to which electric fields are applied using electrodes. A pixel with a light-emitting diode may have a drive transistor coupled in series with the light-emitting diode. A storage capacitor may be coupled to a gate of the drive transistor. A pixel with a liquid crystal portion may have a storage capacitor coupled to a given one of the electrodes in that pixel. Switching circuitry in each pixel may be used to load data from a data line into the storage capacitor of the pixel. The switching circuitry may include a semiconducting-oxide transistor coupled to an associated data line and a series-connected silicon transistor that is coupled to the storage capacitor.

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