Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) driver circuits using shared-charge recycling charge pump structures
    221.
    发明授权
    Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) driver circuits using shared-charge recycling charge pump structures 有权
    使用共享电荷循环电荷泵结构的互补金属氧化物半导体(CMOS)驱动电路的系统,方法和装置

    公开(公告)号:US08334708B1

    公开(公告)日:2012-12-18

    申请号:US13194315

    申请日:2011-07-29

    CPC classification number: H03K19/0019

    Abstract: Example driver circuits can utilize shared-charge recycling charge pump structures. In particular, an example shared-charge recycling process may be applied to a clock buffer and charge transfer cells of the charge pump in a driver circuit. An example recycling process may include recycling of shared charges between the capacitors/capacitances in the charge transfer cells. An example recycling process may use the charges in one or more capacitors to charge one or more other capacitors before the charges are wasted or otherwise discharged to ground. Such recycling may significantly reduce the power consumption of the charge pump while still providing a high output voltage level, according to an example embodiment of the invention.

    Abstract translation: 示例驱动电路可以利用共享电荷循环电荷泵结构。 特别地,示例性共享电荷回收过程可以应用于驱动器电路中的电荷泵的时钟缓冲器和电荷转移单元。 示例回收过程可以包括在电荷转移单元中的电容器/电容之间再循环共享电荷。 示例回收过程可以在一个或多个电容器中的电荷在电荷被浪费或以其它方式放电到地之前对一个或多个其它电容器充电。 根据本发明的示例性实施例,这种再循环可以显着降低电荷泵的功耗,同时仍然提供高输出电压电平。

    Systems and Methods for Wideband CMOS Voltage-Controlled Oscillators Using Reconfigurable Inductor Arrays
    222.
    发明申请
    Systems and Methods for Wideband CMOS Voltage-Controlled Oscillators Using Reconfigurable Inductor Arrays 审中-公开
    使用可重构电感阵列的宽带CMOS压控振荡器的系统和方法

    公开(公告)号:US20120286889A1

    公开(公告)日:2012-11-15

    申请号:US13104807

    申请日:2011-05-10

    CPC classification number: H03B5/1212 H03B5/1228 H03B5/1268

    Abstract: As wireless communication technology evolves, various transceivers become integrated into a single system, which implements a seamless connection to search available frequency bands and to provide wireless connections regardless of their wireless standards. One of the key technologies for seamless implementation is an ultra-wideband local oscillator, which can overcome the restriction of limited tuning range in typical RF local oscillators. Many RF oscillators incorporate LC-tuned oscillators because of their good noise performance while their tuning range is limited by fixed inductance and varied capacitance. The planar inductor fabricated on the CMOS process occupies a large area as well. By replacing the planar inductor with the array of bondwires, and including switches to provide proper impedance for the circuit to generate negative impedance, the tuning range of a CMOS voltage-controlled oscillator (VCO) is extended more than 100%, which number can not be achieved in a convention VCO.

    Abstract translation: 随着无线通信技术的发展,各种收发器被集成到单个系统中,其实现无缝连接以搜索可用的频带并提供无线连接,而不管其无线标准如何。 无缝实现的关键技术之一是超宽带本地振荡器,可以克服典型RF本地振荡器中限制调谐范围的限制。 许多射频振荡器由于其良好的噪声性能而集成了LC调谐振荡器,而其调谐范围受固定电感和变化的电容的限制。 在CMOS工艺上制造的平面电感也占据了大面积。 通过用键合线阵列替换平面电感器,并且包括开关以为电路产生负阻抗提供适当的阻抗,CMOS压控振荡器(VCO)的调谐范围扩展到100%以上,哪个数不能 在会议VCO中实现。

    Systems and methods for CMOS power amplifiers with power mode control
    223.
    发明授权
    Systems and methods for CMOS power amplifiers with power mode control 有权
    具有功率模式控制功能的CMOS功率放大器的系统和方法

    公开(公告)号:US08269561B1

    公开(公告)日:2012-09-18

    申请号:US13104898

    申请日:2011-05-10

    Abstract: Embodiments of the invention may provide CMOS power amplifiers with power mode control to provide the desired power-added efficiency (PAE), idle current, output power, and Adjacent Channel Leakage Ratio (ACLR). For instance, there may be a multi-mode WCDMA CMOS RF power amplifier having high/medium/low output power modes aimed to achieve high PAE and low idle current in a portable wireless environment. According to an example embodiment, a CMOS RF power amplifier may provide a plurality of separate signal paths for purposes of supporting multi-power modes. For example, there may be a first signal path which supports a high-power mode, and a second path which is subsequently divided into two recursive signal paths or sub-paths to support respective medium and low-power modes. One of the three power modes may be selected or controlled using bias control switches in the first and second paths.

    Abstract translation: 本发明的实施例可以提供具有功率模式控制的CMOS功率放大器,以提供期望的功率附加效率(PAE),空闲电流,输出功率和相邻通道泄漏比(ACLR)。 例如,可以存在具有高/中/低输出功率模式的多模WCDMA CMOS RF功率放大器,其旨在在便携式无线环境中实现高PAE和低空闲电流。 根据示例性实施例,CMOS RF功率放大器可以为支持多功率模式的目的提供多个单独的信号路径。 例如,可以存在支持高功率模式的第一信号路径和随后被分成两个递归信号路径或子路径以支持各种中等和低功率模式的第二路径。 可以使用第一和第二路径中的偏置控制开关来选择或控制三种功率模式中的一种。

    TESTING DEVICE, TEST SYSTEM INCLUDING THE SAME, AND METHOD THEREOF
    224.
    发明申请
    TESTING DEVICE, TEST SYSTEM INCLUDING THE SAME, AND METHOD THEREOF 有权
    测试装置,包括其的测试系统及其方法

    公开(公告)号:US20120150459A1

    公开(公告)日:2012-06-14

    申请号:US13310116

    申请日:2011-12-02

    CPC classification number: G01R31/2812 G01R31/2813

    Abstract: A testing device includes a signal sensing unit and a signal processing unit. The signal sensing unit generates a test output signal by sensing a signal from a device under test including a plurality of passive elements that are connected in parallel. The signal processing unit detects an open-type fault of the plurality of passive elements by measuring an impedance of the device under test based on element characteristic information of the plurality of passive elements.

    Abstract translation: 测试装置包括信号感测单元和信号处理单元。 信号感测单元通过感测来自被测器件的信号产生测试输出信号,包括并联连接的多个无源元件。 信号处理单元通过基于多个无源元件的元件特性信息测量被测器件的阻抗来检测多个无源元件的开路型故障。

    Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators
    225.
    发明授权
    Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators 有权
    使用开关谐振器的互补金属氧化物半导体(CMOS)天线开关的系统,方法和装置

    公开(公告)号:US08165535B2

    公开(公告)日:2012-04-24

    申请号:US11754103

    申请日:2007-05-25

    CPC classification number: H04B1/48

    Abstract: Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.

    Abstract translation: 可以为CMOS RF天线开关提供系统和方法。 CMOS RF天线开关的系统和方法可以包括可操作以通过至少一个射频(RF)频带发送和接收信号的天线,以及耦合到天线的发射开关,其中发射开关能够传输 对天线的相应的第一信号并且禁止阻止第一信号传输到天线。 用于CMOS RF天线开关的系统和方法还可以包括耦合到天线的接收器开关,其中接收器开关在使能时形成滤波器,当禁用时形成谐振电路,其中滤波器提供接收由第 天线,并且其中谐振电路阻止至少第一信号的接收。

    Organic light emitting device
    226.
    发明申请
    Organic light emitting device 有权
    有机发光装置

    公开(公告)号:US20120018707A1

    公开(公告)日:2012-01-26

    申请号:US13137162

    申请日:2011-07-25

    Abstract: An organic light-emitting device including a substrate; a first electrode; a second electrode; an emission layer; a first electron transport layer; a second electron transport layer; a third electron transport layer; and a hole transport layer, wherein the first electron transporting material has an electron mobility smaller than an electron mobility of the second electron transporting material at an electric field of 800 to 1000 V/cm, the second electron transporting material and the third electron transporting material each independently have an electron mobility of about 10−8 to about 10 cm2/V·s at an electric field of 800 to 1000 V/cm, and the third electron transport layer has an electron injection barrier of about 0.2 eV or less at an interface between the third electron transport layer and the second electrode.

    Abstract translation: 一种有机发光装置,包括:基板; 第一电极; 第二电极; 发射层; 第一电子传输层; 第二电子传输层; 第三电子传输层; 和空穴传输层,其中第一电子传输材料在800至1000V / cm的电场下具有小于第二电子传输材料的电子迁移率的电子迁移率,第二电子传输材料和第三电子传输材料 在800〜1000V / cm的电场下,各自独立地具有约10-8至约10cm 2 / V·s的电子迁移率,并且第三电子传输层的电子注入势垒在约0.2eV以下 第三电子传输层和第二电极之间的界面。

    Organic light emitting diode display
    227.
    发明申请
    Organic light emitting diode display 有权
    有机发光二极管显示

    公开(公告)号:US20110240964A1

    公开(公告)日:2011-10-06

    申请号:US12929996

    申请日:2011-03-01

    CPC classification number: H01L27/3248 H01L51/5088 H01L51/5092

    Abstract: An organic light emitting diode (OLED) display including a substrate main body; a thin film transistor on the substrate main body; and an organic light emitting diode including a transparent electrode connected with the thin film transistor and being capable of injecting electrons, an organic emission layer on the transparent electrode, and a reflective electrode on the organic emission layer and being capable of injecting holes, wherein the organic emission layer includes an electron injection unit on the transparent electrode, the electron injection unit including an electron injection metal layer, an electron injection layer, and an electron injection dipole layer, and a light emitting unit on the electron injection unit.

    Abstract translation: 一种有机发光二极管(OLED)显示器,包括基板主体; 在基板主体上的薄膜晶体管; 以及有机发光二极管,包括与薄膜晶体管连接的能够注入电子的透明电极,透明电极上的有机发射层和有机发射层上的反射电极,并且能够注入空穴,其中, 有机发光层包括在透明电极上的电子注入单元,电子注入单元包括电子注入金属层,电子注入层和电子注入偶极子层以及电子注入单元上的发光单元。

    BALUN FUNCTION WITH REFERENCE ENHANCEMENT IN SINGLE-ENDED PORT
    228.
    发明申请
    BALUN FUNCTION WITH REFERENCE ENHANCEMENT IN SINGLE-ENDED PORT 有权
    具有单端口参考增强的BALUN功能

    公开(公告)号:US20110221528A1

    公开(公告)日:2011-09-15

    申请号:US12722966

    申请日:2010-03-12

    CPC classification number: H03F3/45475 H03F2200/09 H03F2203/45731

    Abstract: Systems and methods are provided for a transformer or balun function with reference enhancement. The systems and methods may include a transformer having at least a primary winding and a secondary winding for reference enhancement, where the primary winding includes a center tap, where the secondary winding includes a first port and a second port, and an electrical connection that electrically connects the second port and the center tap of the primary winding to provide a common reference for the primary winding and the secondary winding. The primary winding of the transformer may be configured to receive differential outputs of a power amplifier, and the transformer may be configured to convert the differential outputs from a balanced signal to an unbalanced signal available at the first port of the secondary winding.

    Abstract translation: 为变压器或平衡 - 不平衡变换器提供了参考增强的系统和方法。 系统和方法可以包括具有至少初级绕组和用于参考增强的次级绕组的变压器,其中初级绕组包括中心抽头,其中次级绕组包括第一端口和第二端口,以及电连接,其电气 连接初级绕组的第二端口和中心抽头以为初级绕组和次级绕组提供公共参考。 变压器的初级绕组可以被配置为接收功率放大器的差分输出,并且变压器可以被配置为将来自平衡信号的差分输出转换成在次级绕组的第一端口处可用的不平衡信号。

    Multiprocessor system and method thereof
    230.
    发明申请

    公开(公告)号:US20110107006A1

    公开(公告)日:2011-05-05

    申请号:US12929222

    申请日:2011-01-10

    CPC classification number: G06F12/02

    Abstract: A multiprocessor system and method thereof are provided. The example multiprocessor system may include first and second processors, a dynamic random access memory having a memory cell array, the memory cell array including a first memory bank coupled to the first processor through a first port, second and fourth memory banks coupled to the second processor through a second port, and a third memory bank shared and connected with the first and second processors through the first and second ports, and a bank address assigning unit for assigning bank addresses to select individually the first and second memory banks, as the same bank address through the first and second ports, so that starting addresses for the first and second memory banks become equal in booting, and assigning bank addresses to select the third memory bank, as different bank addresses through the first and second ports, and assigning, through the second port, bank addresses to select the fourth memory bank, as the same bank address as a bank address to select the third memory bank through the first port.

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