Abstract:
Example driver circuits can utilize shared-charge recycling charge pump structures. In particular, an example shared-charge recycling process may be applied to a clock buffer and charge transfer cells of the charge pump in a driver circuit. An example recycling process may include recycling of shared charges between the capacitors/capacitances in the charge transfer cells. An example recycling process may use the charges in one or more capacitors to charge one or more other capacitors before the charges are wasted or otherwise discharged to ground. Such recycling may significantly reduce the power consumption of the charge pump while still providing a high output voltage level, according to an example embodiment of the invention.
Abstract:
As wireless communication technology evolves, various transceivers become integrated into a single system, which implements a seamless connection to search available frequency bands and to provide wireless connections regardless of their wireless standards. One of the key technologies for seamless implementation is an ultra-wideband local oscillator, which can overcome the restriction of limited tuning range in typical RF local oscillators. Many RF oscillators incorporate LC-tuned oscillators because of their good noise performance while their tuning range is limited by fixed inductance and varied capacitance. The planar inductor fabricated on the CMOS process occupies a large area as well. By replacing the planar inductor with the array of bondwires, and including switches to provide proper impedance for the circuit to generate negative impedance, the tuning range of a CMOS voltage-controlled oscillator (VCO) is extended more than 100%, which number can not be achieved in a convention VCO.
Abstract:
Embodiments of the invention may provide CMOS power amplifiers with power mode control to provide the desired power-added efficiency (PAE), idle current, output power, and Adjacent Channel Leakage Ratio (ACLR). For instance, there may be a multi-mode WCDMA CMOS RF power amplifier having high/medium/low output power modes aimed to achieve high PAE and low idle current in a portable wireless environment. According to an example embodiment, a CMOS RF power amplifier may provide a plurality of separate signal paths for purposes of supporting multi-power modes. For example, there may be a first signal path which supports a high-power mode, and a second path which is subsequently divided into two recursive signal paths or sub-paths to support respective medium and low-power modes. One of the three power modes may be selected or controlled using bias control switches in the first and second paths.
Abstract:
A testing device includes a signal sensing unit and a signal processing unit. The signal sensing unit generates a test output signal by sensing a signal from a device under test including a plurality of passive elements that are connected in parallel. The signal processing unit detects an open-type fault of the plurality of passive elements by measuring an impedance of the device under test based on element characteristic information of the plurality of passive elements.
Abstract:
Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.
Abstract:
An organic light-emitting device including a substrate; a first electrode; a second electrode; an emission layer; a first electron transport layer; a second electron transport layer; a third electron transport layer; and a hole transport layer, wherein the first electron transporting material has an electron mobility smaller than an electron mobility of the second electron transporting material at an electric field of 800 to 1000 V/cm, the second electron transporting material and the third electron transporting material each independently have an electron mobility of about 10−8 to about 10 cm2/V·s at an electric field of 800 to 1000 V/cm, and the third electron transport layer has an electron injection barrier of about 0.2 eV or less at an interface between the third electron transport layer and the second electrode.
Abstract:
An organic light emitting diode (OLED) display including a substrate main body; a thin film transistor on the substrate main body; and an organic light emitting diode including a transparent electrode connected with the thin film transistor and being capable of injecting electrons, an organic emission layer on the transparent electrode, and a reflective electrode on the organic emission layer and being capable of injecting holes, wherein the organic emission layer includes an electron injection unit on the transparent electrode, the electron injection unit including an electron injection metal layer, an electron injection layer, and an electron injection dipole layer, and a light emitting unit on the electron injection unit.
Abstract:
Systems and methods are provided for a transformer or balun function with reference enhancement. The systems and methods may include a transformer having at least a primary winding and a secondary winding for reference enhancement, where the primary winding includes a center tap, where the secondary winding includes a first port and a second port, and an electrical connection that electrically connects the second port and the center tap of the primary winding to provide a common reference for the primary winding and the secondary winding. The primary winding of the transformer may be configured to receive differential outputs of a power amplifier, and the transformer may be configured to convert the differential outputs from a balanced signal to an unbalanced signal available at the first port of the secondary winding.
Abstract:
A power amplifier system can include a plurality of driver amplifiers and a plurality of power amplifiers, where each driver amplifier and power amplifier includes at least one respective input port and at least one respective output port. The power amplifier system also includes a shared inductive device that provides common interstage matching between the respective output ports of the plurality of driver amplifiers and the respective input ports of the plurality of power amplifiers. The shared inductive device can be a shared inductor or a shared transformer.
Abstract:
A multiprocessor system and method thereof are provided. The example multiprocessor system may include first and second processors, a dynamic random access memory having a memory cell array, the memory cell array including a first memory bank coupled to the first processor through a first port, second and fourth memory banks coupled to the second processor through a second port, and a third memory bank shared and connected with the first and second processors through the first and second ports, and a bank address assigning unit for assigning bank addresses to select individually the first and second memory banks, as the same bank address through the first and second ports, so that starting addresses for the first and second memory banks become equal in booting, and assigning bank addresses to select the third memory bank, as different bank addresses through the first and second ports, and assigning, through the second port, bank addresses to select the fourth memory bank, as the same bank address as a bank address to select the third memory bank through the first port.