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    Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure
    1.
    发明授权
    Systems, methods, and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using body switching in multistacking structure 有权
    在多层结构中使用身体切换的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US07890063B2

    公开(公告)日：2011-02-15

    申请号：US11857322

    申请日：2007-09-18

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Changhyuk Cho ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Changhyuk Cho ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H04B1/44

    CPC分类号： H03K17/693 ,  H03K17/063 ,  H03K17/102 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供CMOS天线开关，其可以被称为CMOS SP4T开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能大约在900MHz和1.9GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底调谐的多层晶体管来阻挡来自发射路径的高功率信号以及在接收器路径处保持低的插入损耗。 另一方面，在发送开关中，可以应用主体衬底调谐技术来保持对天线的高功率输送。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.8GHz）处提供31dBm的P 1 dB。 此外，根据本发明的示例实施例，可以分别获得在900MHz和1.9GHz处的0.9dB和-1.1dB的插入损耗。

    Systems, Methods and Apparatuses for High Power Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching and External Component in Multi-Stacking Structure
    2.
    发明申请
    Systems, Methods and Apparatuses for High Power Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching and External Component in Multi-Stacking Structure 有权
    大功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置在多堆叠结构中使用主体开关和外部元件

    公开(公告)号：US20090073078A1

    公开(公告)日：2009-03-19

    申请号：US11855950

    申请日：2007-09-14

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H01Q3/24

    CPC分类号： H03K17/693 ,  H03K17/063 ,  H03K17/102 ,  H03K2017/066 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, −60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz，1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底切换的多层晶体管，并且在漏极和栅极之间附接外部电容器以阻挡来自发射路径的高功率信号以及在接收器路径处保持较低的插入损耗。 CMOS天线开关的示例性实施例可以在多频带（例如，900MHz，1.8GHz和2.1GHz）处提供38dBm P 0.1dB。 此外，根据本发明的示例性实施例，可以获得高达30dBm输入的-60dBc的二次和三次谐波性能。

    Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure
    3.
    发明授权
    Systems, methods, and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and substrate junction diode controlling in multistacking structure 有权
    在多层结构中使用体开关和衬底结二极管控制的大功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US07843280B2

    公开(公告)日：2010-11-30

    申请号：US11943378

    申请日：2007-11-20

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H01P1/15 ,  H04B1/44

    CPC分类号： H03K17/693 ,  H03K17/102 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a −60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz 1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底切换和源和体连接以及身体浮动技术的多堆叠晶体管，以通过防止器件在OFF状态下的通道形成以及保持低插入来阻止来自发射路径的高功率信号 在接收机路径损失。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.9GHz和2.1GHz）处提供35dBm的P 1dB。 此外，根据本发明的示例性实施例，可以获得高达28dBm的输入功率对于开关的-60dBc的二次和三次谐波。

    Systems, Methods, and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching in Multistacking Structure
    4.
    发明申请
    Systems, Methods, and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching in Multistacking Structure 有权
    使用多层结构中的主体切换的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US20080079653A1

    公开(公告)日：2008-04-03

    申请号：US11857322

    申请日：2007-09-18

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Changhyuk Cho ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Changhyuk Cho ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H03K17/687 ,  H01Q1/00

    CPC分类号： H03K17/693 ,  H03K17/063 ,  H03K17/102 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SP4T switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz and 1.9 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate tuning to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. On the other hand, in the transmit switch, a body substrate tuning technique may be applied to maintain high power delivery to the antenna. Example embodiments of the CMOS antenna switch may provide for 31 dBm P 1 dB at both bands (e.g., 900 MHz and 1.8 GHz). In addition, a 0.9 dB and −1.1 dB insertion loss at 900 MHz and 1.9 GHz, respectively, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供CMOS天线开关，其可以被称为CMOS SP4T开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能大约在900MHz和1.9GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底调谐的多层晶体管来阻挡来自发射路径的高功率信号以及在接收器路径处保持低的插入损耗。 另一方面，在发送开关中，可以应用主体衬底调谐技术来保持对天线的高功率输送。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.8GHz）处提供31dBm的P 1 dB。 此外，根据本发明的示例实施例，可以分别获得在900MHz和1.9GHz处的0.9dB和-1.1dB的插入损耗。

    Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators
    5.
    发明授权
    Systems, methods and apparatuses for complementary metal oxide semiconductor (CMOS) antenna switches using switched resonators 有权
    使用开关谐振器的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US08165535B2

    公开(公告)日：2012-04-24

    申请号：US11754103

    申请日：2007-05-25

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H04B1/44

    CPC分类号： H04B1/48

    摘要： Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna. the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.

    摘要翻译： 可以为CMOS RF天线开关提供系统和方法。 CMOS RF天线开关的系统和方法可以包括可操作以通过至少一个射频（RF）频带发送和接收信号的天线，以及耦合到天线的发射开关，其中发射开关能够传输 对天线的相应的第一信号并且禁止阻止第一信号传输到天线。 用于CMOS RF天线开关的系统和方法还可以包括耦合到天线的接收器开关，其中接收器开关在使能时形成滤波器，当禁用时形成谐振电路，其中滤波器提供接收由第 天线，并且其中谐振电路阻止至少第一信号的接收。

    Systems, Methods, and Apparatuses for High Power Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching and Substrate Junction Diode Controlling in Multistacking Structure
    6.
    发明申请
    Systems, Methods, and Apparatuses for High Power Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Body Switching and Substrate Junction Diode Controlling in Multistacking Structure 有权
    用于大功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置在多层结构中使用主体切换和基板结二极管控制

    公开(公告)号：US20080129642A1

    公开(公告)日：2008-06-05

    申请号：US11943378

    申请日：2007-11-20

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H01Q9/04

    CPC分类号： H03K17/693 ,  H03K17/102 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and source and body connection along with body floating technique to block high power signals from the transmit path by preventing channel formation of the device in OFF state as well as to maintain low insertion loss at the receiver path. Example embodiments of the CMOS antenna switch may provide for 35 dBm P 1 dB at both bands (e.g., 900 MHz and 1.9 GHz and 2.1 GHz). In addition, a −60 dBc second and third harmonic up to 28 dBm input power to the switch, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz 1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体基板切换以及源和体连接以及主体浮动技术的多堆叠晶体管，以通过防止器件在OFF状态下的通道形成以及保持低插入来阻止来自发射路径的高功率信号 在接收机路径损失。 CMOS天线开关的示例实施例可以在两个频带（例如，900MHz和1.9GHz和2.1GHz）处提供35dBm的P 1dB。 此外，根据本发明的示例性实施例，可以获得高达28dBm的输入功率对于开关的-60dBc的二次和三次谐波。

    Systems, Methods and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Switched Resonators
    7.
    发明申请
    Systems, Methods and Apparatuses for Complementary Metal Oxide Semiconductor (CMOS) Antenna Switches Using Switched Resonators 有权
    使用开关谐振器的互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置

    公开(公告)号：US20070281629A1

    公开(公告)日：2007-12-06

    申请号：US11754103

    申请日：2007-05-25

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H04B1/44

    CPC分类号： H04B1/48

    摘要： Systems and methods may be provided for a CMOS RF antenna switch. The systems and methods for the CMOS RF antenna switch may include an antenna that is operative to transmit and receive signals over at least one radio frequency (RF) band, and a transmit switch coupled to the antenna, where the transmit switch is enabled to transmit a respective first signal to the antenna and disabled to prevent transmission of the first signal to the antenna the systems and methods for the CMOS RF antenna switch may further include a receiver switch coupled to the antenna, where the receiver switch forms a filter when enabled and a resonant circuit when disabled, where the filter provides for reception of a second signal received by the antenna, and where the resonant circuit blocks reception of at least the first signal.

    摘要翻译： 可以为CMOS RF天线开关提供系统和方法。 CMOS RF天线开关的系统和方法可以包括可操作以通过至少一个射频（RF）频带发送和接收信号的天线，以及耦合到天线的发射开关，其中发射开关能够传输 对天线的相应的第一信号并且禁止阻止第一信号传输到天线，用于CMOS RF天线开关的系统和方法还可以包括耦合到天线的接收器开关，其中接收器开关在启用时形成滤波器，并且 在禁用时的谐振电路，其中滤波器提供用于接收由天线接收的第二信号，并且其中谐振电路阻止至少第一信号的接收。

    Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure
    8.
    发明授权
    Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure 有权
    高功率互补金属氧化物半导体（CMOS）天线开关的系统，方法和装置，使用身体切换和多层叠结构中的外部组件

    公开(公告)号：US07738841B2

    公开(公告)日：2010-06-15

    申请号：US11855950

    申请日：2007-09-14

    申请人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    发明人： Minsik Ahn ,  Chang-Ho Lee ,  Jaejoon Chang ,  Wangmyong Woo ,  Haksun Kim ,  Joy Laskar

    IPC分类号： H04B1/44

    CPC分类号： H03K17/693 ,  H03K17/063 ,  H03K17/102 ,  H03K2017/066 ,  H03K2217/0018 ,  H04B1/48

    摘要： Embodiments of the invention may provide for a CMOS antenna switch, which may be referred to as a CMOS SPDT switch. The CMOS antenna switch may operate at a plurality of frequencies, perhaps around 900 MHz, 1.9 GHz and 2.1 GHz according to an embodiment of the invention. The CMOS antenna switch may include both a receiver switch and a transmit switch. The receiver switch may utilize a multi-stack transistor with body substrate switching and attachment of external capacitor between drain and gate to block high power signals from the transmit path as well as to maintain low insertion loss at the receiver path. Exemplary embodiments of the CMOS antenna switch may provide for 38 dBm P 0.1 dB at multi bands (e.g., 900 MHz, 1.8 GHz, and 2.1 GHz). In addition, −60 dBc second and third harmonic performance up to 30 dBm input, may be obtained according to example embodiments of the invention.

    摘要翻译： 本发明的实施例可以提供可被称为CMOS SPDT开关的CMOS天线开关。 根据本发明的实施例，CMOS天线开关可以以多个频率操作，可能约为900MHz，1.9GHz和2.1GHz。 CMOS天线开关可以包括接收器开关和发送开关。 接收器开关可以利用具有主体衬底切换的多层晶体管，并且在漏极和栅极之间附接外部电容器以阻挡来自发射路径的高功率信号以及在接收器路径处保持较低的插入损耗。 CMOS天线开关的示例性实施例可以在多频带（例如，900MHz，1.8GHz和2.1GHz）处提供38dBm P 0.1dB。 此外，根据本发明的示例性实施例，可以获得高达30dBm输入的-60dBc的二次和三次谐波性能。