SLOTTED WAVEGUIDES INCLUDING A METAMATERIAL STRUCTURE

    公开(公告)号:US20230305242A1

    公开(公告)日:2023-09-28

    申请号:US17705911

    申请日:2022-03-28

    Inventor: Yusheng Bian

    CPC classification number: G02B6/4203

    Abstract: Photonics structures including a slotted waveguide and methods of fabricating such photonics structures. The photonics structure includes a slotted waveguide having a first waveguide core and a second waveguide core laterally positioned adjacent to the first waveguide core. The first waveguide core is separated from the second waveguide core by a slot. The photonics structure further includes a metamaterial structure having a plurality of elements separated by a plurality of gaps and a dielectric material in the plurality of gaps. The metamaterial structure and the slot of the slotted waveguide are positioned with an overlapping arrangement.

    MULTIPLE-CORE HETEROGENEOUS WAVEGUIDE STRUCTURES INCLUDING MULTIPLE SLOTS

    公开(公告)号:US20230244033A1

    公开(公告)日:2023-08-03

    申请号:US17588440

    申请日:2022-01-31

    CPC classification number: G02B6/136 G02B2006/12061

    Abstract: Waveguide structures and methods of fabricating a waveguide structure. The structure includes a first waveguide core, a second waveguide core, and a third waveguide core adjacent to the first waveguide core and the second waveguide core. The third waveguide core is laterally separated from the first waveguide core by a first slot, and the third waveguide core is laterally separated from the second waveguide core by a second slot. The first waveguide core and the second waveguide core comprise a first material, and the third waveguide core comprises a second material that is different in composition from the first material.

    Optical polarizer with varying waveguide core thickness and methods to form same

    公开(公告)号:US11686901B2

    公开(公告)日:2023-06-27

    申请号:US17448804

    申请日:2021-09-24

    CPC classification number: G02B6/2773

    Abstract: Embodiments of the disclosure provide an optical polarizer with a varying vertical thickness, and methods to form the same. An optical polarizer according to the disclosure may include a first waveguide core over a semiconductor substrate. A first cladding material is on at least an upper surface of the first waveguide core. A second waveguide core over the first waveguide core and above the first cladding material. The second waveguide core includes a first segment having a vertical thickness that varies along a length of the first segment. A second cladding material is at least partially surrounding the second waveguide core. Transfer of one of a transverse electric (TE) mode signal and a transverse magnetic (TM) mode signal from the first waveguide core to the second waveguide core occurs between the first segment of the second waveguide core and the first waveguide core.

    METAMATERIAL EDGE COUPLERS IN THE BACK-END-OF-LINE STACK OF A PHOTONICS CHIP

    公开(公告)号:US20230117802A1

    公开(公告)日:2023-04-20

    申请号:US18083716

    申请日:2022-12-19

    Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.

    OPTICAL POLARIZER WITH VARYING WAVEGUIDE CORE THICKNESS AND METHODS TO FORM SAME

    公开(公告)号:US20230097528A1

    公开(公告)日:2023-03-30

    申请号:US17448804

    申请日:2021-09-24

    Abstract: Embodiments of the disclosure provide an optical polarizer with a varying vertical thickness, and methods to form the same. An optical polarizer according to the disclosure may include a first waveguide core over a semiconductor substrate. A first cladding material is on at least an upper surface of the first waveguide core. A second waveguide core over the first waveguide core and above the first cladding material. The second waveguide core includes a first segment having a vertical thickness that varies along a length of the first segment. A second cladding material is at least partially surrounding the second waveguide core. Transfer of one of a transverse electric (TE) mode signal and a transverse magnetic (TM) mode signal from the first waveguide core to the second waveguide core occurs between the first segment of the second waveguide core and the first waveguide core.

    OPTICAL COUPLERS INCLUDING A BACK-END-OF-LINE GRATING

    公开(公告)号:US20230083198A1

    公开(公告)日:2023-03-16

    申请号:US17475689

    申请日:2021-09-15

    Abstract: Structures including an optical coupler and methods of fabricating a structure including an optical coupler. The structure includes a substrate, a first dielectric layer on the substrate, and an optical coupler having a first grating and a second grating. The first grating has a first plurality of segments positioned in a first level over the first dielectric layer. The second grating has a second plurality of segments positioned in a second level over the first dielectric layer. The second level differs in elevation above the first dielectric layer from the first level. The second plurality of segments are positioned in the second level to overlap with the first plurality of segments of the first grating, and the second plurality of segments comprise a metal. A second dielectric layer is positioned in a vertical direction between the first level and the second level.

    OPTICAL DEVICE WITH LOW-LOSS THERMALLY TUNABLE CLOSED-CURVE OPTICAL WAVEGUIDE

    公开(公告)号:US20230073958A1

    公开(公告)日:2023-03-09

    申请号:US18055576

    申请日:2022-11-15

    Abstract: Disclosed is a photonic structure and associated method. The structure includes a closed-curve waveguide having a first height, as measured from the top surface of an insulator layer, and an outer curved sidewall that extends essentially vertically the full first height (e.g., to minimize signal loss). The structure includes a closed-curve thermal coupler and a heating element. The closed-curve thermal coupler is thermally coupled to and laterally surrounded by the closed-curve waveguide and has a second height that is less than the first height. In some embodiments, the closed-curve waveguide and the closed-curve thermal coupler are continuous portions of the same semiconductor layer having different thicknesses. The heating element is thermally coupled to the closed-curve thermal coupler and thereby indirectly thermally coupled to the closed-curve waveguide. Thus, the heating element is usable for thermally tuning the closed-curve waveguide via the closed-curve thermal coupler to minimize any temperature-dependent resonance shift (TDRS).

    PHOTONICS CHIPS INCLUDING A FULLY-DEPLETED SILICON-ON-INSULATOR FIELD-EFFECT TRANSISTOR

    公开(公告)号:US20230047046A1

    公开(公告)日:2023-02-16

    申请号:US17973618

    申请日:2022-10-26

    Abstract: Structures for a photonics chip that include a fully-depleted silicon-on-insulator field-effect transistor and related methods. A first device region of a substrate includes a first device layer, a first portion of a second device layer, and a buried insulator layer separating the first device layer from the first portion of the second device layer. A second device region of the substrate includes a second portion of the second device layer. The first device layer, which has a thickness in a range of about 4 to about 20 nanometers, transitions in elevation to the second portion of the second device layer with a step height equal to a sum of the thicknesses of the first device layer and the buried insulator layer. A field-effect transistor includes a gate electrode on the top surface of the first device layer. An optical component includes the second portion of the second device layer.

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