Microelectromechanical apparatus for elevating and tilting a platform
    221.
    发明申请
    Microelectromechanical apparatus for elevating and tilting a platform 有权
    用于升降平台的微机电装置

    公开(公告)号:US20020171327A1

    公开(公告)日:2002-11-21

    申请号:US10191917

    申请日:2002-07-09

    Abstract: A microelectromechanical (MEM) apparatus is disclosed which has a platform that can be elevated above a substrate and tilted at an arbitrary angle using a plurality of flexible members which support the platform and control its movement. Each flexible member is further controlled by one or more MEM actuators which act to bend the flexible member. The MEM actuators can be electrostatic comb actuators or vertical zip actuators, or a combination thereof. The MEM apparatus can include a mirror coating to form a programmable mirror for redirecting or switching one or more light beams for use in a projection display. The MEM apparatus with-the mirror coating also has applications for switching light beams between optical fibers for use in a local area fiber optic network, or for use in fiber optic telecommunications or data communications systems.

    Abstract translation: 公开了一种微机电(MEM)装置,其具有能够在基板上升高并以任意角度倾斜的平台,该平台使用支撑平台并控制其运动的多个柔性构件。 每个柔性构件由一个或多个用于弯曲柔性构件的MEM致动器进一步控制。 MEM致动器可以是静电梳状致动器或垂直拉链致动器,或其组合。 MEM装置可以包括镜面涂层以形成用于重定向或切换用于投影显示器的一个或多个光束的可编程镜子。 具有镜面涂层的MEM装置还具有用于在用于局域光纤网络的光纤之间切换光束或用于光纤电信或数据通信系统的应用。

    Method of making suspended thin-film semiconductor piezoelectric devices
    222.
    发明授权
    Method of making suspended thin-film semiconductor piezoelectric devices 有权
    制备悬浮薄膜半导体压电器件的方法

    公开(公告)号:US06232139B1

    公开(公告)日:2001-05-15

    申请号:US09240780

    申请日:1999-01-29

    CPC classification number: B81B3/0035 B81B2201/038 H03H3/02 Y10S438/97

    Abstract: A process for forming a very thin suspended layer of piezoelectric material of thickness less than 10 microns. The device is made from a combination of GaAs and AlGaAs layers to form either a sensor or an electronic filter. Onto a GaAs substrate is epitaxially deposited a thin (1-5 micron) sacrificial AlGaAs layer, followed by a thin GaAs top layer. In one embodiment the substrate is selectively etched away from below until the AlGaAs layer is reached. Then a second selective etch removes the sacrificial AlGaAs layer, that has acted here as an etch stop, leaving the thin suspended layer of piezoelectric GaAs. In another embodiment, a pattern of small openings is etched through the thin layer of GaAs on top of the device to expose the sacrificial AlGaAs layer. A second selective etch is done through these openings to remove the sacrificial AlGaAs layer, leaving the top GaAs layer suspended over the GaAs substrate. A novel etchant solution containing a surface tension reducing agent is utilized to remove the AlGaAs while preventing buildup of gas bubbles that would otherwise break the thin GaAs layer.

    Abstract translation: 一种形成厚度小于10微米的非常薄的压电材料悬浮层的方法。 该器件由GaAs和AlGaAs层的组合制成,以形成传感器或电子滤波器。 在GaAs衬底上外延沉积薄(1-5微米)牺牲AlGaAs层,然后是薄的GaAs顶层。 在一个实施例中,衬底被选择性地从下面蚀刻,直到达到AlGaAs层。 然后,第二选择性蚀刻去除牺牲AlGaAs层,其在此作为蚀刻停止,留下薄的悬浮层的压电GaAs。 在另一个实施例中,通过在器件顶部的GaAs薄层蚀刻小开口的图案以暴露牺牲AlGaAs层。 通过这些开口进行第二选择性蚀刻以去除牺牲AlGaAs层,使顶部GaAs层悬在GaAs衬底上。 使用含有表面张力降低剂的新颖的蚀刻剂溶液去除AlGaAs,同时防止气泡的积聚,否则会破坏薄的GaAs层。

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