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公开(公告)号：US20220397780A1
公开(公告)日：2022-12-15
申请号：US17829153
申请日：2022-05-31
Inventor： SEITA IWAHASHI
IPC: G02F1/025
Abstract: A phase shifter includes a substrate, waveguides and a wiring portion. The substrate includes optical waveguide regions and contact regions. Each contact region has contact portions. The waveguides are disposed at the substrate, and each of the waveguides accumulates carriers to modulate a phase of light for guiding propagation of the light. The wiring portion electrically connects each of the waveguides and each of the contact portions. Each of the contact portions connecting each of the waveguides to a corresponding one of electrodes to inject the carriers into each of the waveguides. Each of the waveguides has a lengthwise direction defined as a first direction, and a direction that is perpendicular to the first direction and is parallel to a surface of the substrate is defined as a second direction. The optical waveguide regions and the contact regions are disposed to be alternately aligned along the second direction.
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公开(公告)号：US20220344286A1
公开(公告)日：2022-10-27
申请号：US17717426
申请日：2022-04-11
Inventor： Ryota KOJIMA , Akihiro YAMAGUCHI
IPC: H01L23/64 , H01L23/498 , H01L23/00
Abstract: A semiconductor module includes a substrate, a semiconductor package disposed to the substrate, a housing to which the substrate is fixed, and a Y capacitor. A front-surface wiring in the substrate includes a front-surface ground wiring electrically connected to the housing, and a front-surface main wiring connected to a rear-surface wiring that is connected to the semiconductor package. The Y capacitor is disposed on a front surface of the substrate at a position facing the semiconductor package and between the front-surface ground wiring and the front-surface main wiring. The semiconductor package and the Y capacitor are disposed in such a manner that a direction of electric current flowing in the semiconductor package and a direction of electric current flowing in the Y capacitor are opposite to each other.
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公开(公告)号：US20220336603A1
公开(公告)日：2022-10-20
申请号：US17716213
申请日：2022-04-08
Inventor： Eiji KAGOSHIMA , Yohei IWAHASHI
IPC: H01L29/423 , H01L29/66 , H01L29/78 , H01L29/10
Abstract: A method for manufacturing a switching device includes: forming a trench at a top surface of a semiconductor substrate; forming a gate insulation film for covering an inner surface of the trench; forming a gate electrode inside the trench to locate a top surface of the gate electrode below the top surface of the semiconductor substrate; forming an oxide film by oxidizing the top surface of the gate electrode; forming an interlayer insulation film by vapor phase growth at a top surface of the oxide film to locate a top surface of the interlayer insulation film below the top surface of the semiconductor substrate; and forming an upper electrode in contact with the semiconductor substrate at the top surface of the semiconductor substrate and a side surface of the trench located above the top surface of the interlayer insulation film.
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公开(公告)号：US20220319953A1
公开(公告)日：2022-10-06
申请号：US17679314
申请日：2022-02-24
Inventor： Shohei NAGAI , Masaki AOSHIMA
IPC: H01L23/373 , H01L23/498
Abstract: A semiconductor device includes a substrate main body having a first surface and a second surface, an electric component arranged in the substrate main body, a first internal conductor pattern arranged in a first circuit layer located between the first surface and the electric component, and at least one heat absorbing member arranged inside the substrate main body and thermally connected to the first internal conductor pattern.
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公开(公告)号：US20220315411A1
公开(公告)日：2022-10-06
申请号：US17703418
申请日：2022-03-24
Inventor： Keitaro ITO , Shota HARADA , Katsuaki GOTO , Yuuki INAGAKI , Teruhisa AKASHI , Hirofumi FUNABASHI , Takahiko YOSHIDA , Yusuke KAWAI
Abstract: A micro vibration body includes a curved surface portion, which has an annular curved surface, and a recessed portion, which is recessed from the curved surface portion. A mounting substrate includes an inner frame portion and electrode portions, which surround an inner frame portion. A joining member is provided in an inner region of the mounting substrate surrounded by the inner frame portion. The recessed portion of the micro vibration body has a bottom surface defining a mounted surface located in the inner region and joined to the mounting substrate via the joining member. The curved surface portion has a rim that includes an end portion of the curved surface portion on an opposite side to the recessed portion. The rim has a rim lower surface located on a same plane as the mounted surface or a tip end portion of the mounted surface.
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Patent Agency Ranking
公开(公告)号：US20220278621A1
公开(公告)日：2022-09-01
申请号：US17680745
申请日：2022-02-25
Inventor： Kazunori Kurata , Hideya Matsunaga , Kouhei Shinomiya
Abstract: In a power conversion apparatus, first to xth converters are connected in parallel to each other. A control unit outputs, based on command information related to an output of the power conversion apparatus, control information. A pulse generator selects, based on the control information, a number n of converters from the first to xth converters, n being an integer more than or equal to 2 and smaller than x. The number n is defined as a multiply-driven number n. The pulse generator generates, based on the control information, at least one multiple drive-pulse train that comprises n drive pulses for multiply driving the n selected converters. A variable determiner changes the multiply-driven number n.
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公开(公告)号：US20220189787A1
公开(公告)日：2022-06-16
申请号：US17535276
申请日：2021-11-24
Inventor： Shuhei ICHIKAWA , Hiroki MIYAKE
IPC: H01L21/425 , H01L29/66 , H01L29/872
Abstract: A manufacturing method of a semiconductor device includes: preparing a semiconductor substrate including a first semiconductor layer made of gallium oxide containing Sn and a second semiconductor layer disposed on the first semiconductor layer and made of n type gallium oxide having a Sn concentration lower than a Sn concentration of the first semiconductor layer; implanting ions of a group 2 element into the second semiconductor layer; and forming a diffusion region, in which the group 2 element diffuses, in a range from a surface of the second semiconductor layer to an interface between the second semiconductor layer and the first semiconductor layer.
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公开(公告)号：US20220187072A1
公开(公告)日：2022-06-16
申请号：US17516821
申请日：2021-11-02
Inventor： TERUHISA AKASHI , HIROFUMI FUNABASHI , YUUKI INAGAKI
IPC: G01C19/5691 , B81C1/00
Abstract: A support structure for a micro-vibrator includes: a micro-vibrating body having a curved surface portion and a recess recessed from the curved surface portion; and a support member having a rod and an adhesive member arranged at a tip end of the rod. The support member is adhered on a connecting surface of the recess through the adhesive member. The connecting surface of the recess is an internal bottom surface of the recess.
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公开(公告)号：US20220115544A1
公开(公告)日：2022-04-14
申请号：US17398129
申请日：2021-08-10
Inventor： Hiroki MIYAKE
IPC: H01L29/861 , H01L21/02 , H01L31/0352
Abstract: A semiconductor device includes: a p-type region including a super-lattice pseudo mixed crystal region in which a first layer and a second layer are alternately stacked. The first layer includes a gallium oxide based semiconductor. The second layer includes a p type semiconductor made of a material different from the first layer.
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公开(公告)号：US12297562B2
公开(公告)日：2025-05-13
申请号：US18060071
申请日：2022-11-30
Inventor： Isaho Kamata , Norihiro Hoshino , Kiyoshi Betsuyaku , Hidekazu Tsuchida , Takeshi Okamoto , Akiyoshi Horiai
IPC: C30B29/36 , C30B23/00 , C01B32/956 , H10D62/822 , H10D62/832
Abstract: A silicon carbide ingot having micropipes in a seed crystal closed and being reduced in the gathering of screw dislocations, a method for manufacturing the silicon carbide ingot, and a method for manufacturing a silicon carbide wafer are provided. The silicon carbide ingot includes a seed crystal composed of a silicon carbide single crystal and having micropipes being hollow defects; a buffer layer provided on the seed crystal and composed of silicon carbide; and a bulk crystal growth layer provided on the buffer layer and composed of silicon carbide. The buffer layer and the bulk crystal growth layer have a plurality of screw dislocations continuous with the micropipes closed with the buffer layer, and the plurality of screw dislocations having the micropipe in common in the bulk crystal growth layer are 150 um or more apart from each other.
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