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公开(公告)号：US12293945B2
公开(公告)日：2025-05-06
申请号：US17708490
申请日：2022-03-30
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Tokai National Higher Education and Research System , HAMAMATSU PHOTONICS K.K.
Inventor： Shinichi Hoshi , Masatake Nagaya , Chiaki Sasaoka , Daisuke Kawaguchi , Keisuke Hara
Abstract: A semiconductor chip includes a chip constituent substrate having a first surface and a second surface, and including a layer containing gallium nitride. The chip constituent substrate is provided with a semiconductor element, and components constituting the semiconductor element are located more in an area adjacent to the first surface than in an area adjacent to the second surface. The chip constituent substrate is formed with a through hole penetrating the chip constituent substrate from the first surface to the second surface. The through hole defines a first opening adjacent to the first surface and a second opening adjacent to the second surface, and the first opening is larger than the second opening.
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公开(公告)号：US20250133792A1
公开(公告)日：2025-04-24
申请号：US18829395
申请日：2024-09-10
Inventor： TOSHIKI MII , RYOTA SUZUKI
Abstract: A switching element includes trenches extending in a first direction, inter-trench semiconductor layers, and connection regions arranged linearly at intervals along a second direction to form columns. The inter-trench semiconductor layers intersect the columns at intersection portions. The intersection portions include connection intersection portions including connection regions and non-connection intersection portions without the connection regions which are arranged in each of the columns in a pattern in which a portion where the connection intersection portion are arranged continuously and a portion where the non-connection intersection portions are arranged continuously are arranged alternately. A phase of the pattern is shifted in the second direction between the adjacent columns. A Chebyshev distance from each of the non-connection intersection portions to a closest one of the connection intersection portions is 1. A Chebyshev distance from each of the connection intersection portions to a closest one of the non-connection intersection portions is 1.
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公开(公告)号：US20250120142A1
公开(公告)日：2025-04-10
申请号：US18798025
申请日：2024-08-08
Inventor： Jun SAITO , Shin KINOSHITA , Tomofumi NIIBAYASHI
IPC: H01L29/06 , H01L29/66 , H01L29/739 , H01L29/78
Abstract: A semiconductor device includes a semiconductor substrate that includes a first semiconductor layer of p-type, a drift layer disposed below the first semiconductor layer, and a second semiconductor layer of n-type disposed below the drift layer. The drift layer includes a first semiconductor region of a first conductivity type, and a plurality of second semiconductor regions of a second conductivity type and a plurality of third semiconductor regions of the second conductivity type distributed in the first semiconductor region. Each of the second semiconductor regions has a shape elongated in a first direction. Each of the third semiconductor regions has a shape elongated in a second direction that is perpendicular to the first direction. The second semiconductor regions and the third semiconductor regions are alternately arranged at intervals along the first direction, and are alternately arranged at intervals along the second direction.
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公开(公告)号：US20250111680A1
公开(公告)日：2025-04-03
申请号：US18889907
申请日：2024-09-19
Inventor： Nobuaki MATSUDAIRA , Tomohiro NEZUKA
Abstract: An estimation device includes a coordinate calculation unit, a feature obtaining unit, and a bird's-eye view generation unit. The coordinate calculation unit calculates three-dimensional coordinates of an object present around a vehicle based on two-dimensional images representing outside of a vehicle captured by a plurality of cameras mounted on the vehicle, by using a self-position estimation method including a visual odometry which calculates the three-dimensional coordinates of the object in sequential two-dimensional images captured by a same camera. The feature obtaining unit obtains a bird's-eye view (BEV) feature, which is a feature in a BEV space, based on the three-dimensional coordinates and at least one of the two-dimensional images by using a BEV estimation algorithm. The bird's-eye view generation unit generates a bird's-eye view based on the BEV feature.
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公开(公告)号：US20250079807A1
公开(公告)日：2025-03-06
申请号：US18748384
申请日：2024-06-20
Inventor： HITOSHI YAMADA , KOICHI OYAMA
Abstract: A semiconductor optical amplifier includes: a waveguide layer through which a light propagates; and active layers having higher average refractive index than the waveguide layer to amplify a light. The active layers include a first active layer stacked on an upper surface of the waveguide layer and a second active layer stacked on a lower surface of the waveguide layer.
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Patent Agency Ranking
公开(公告)号：US20250070474A1
公开(公告)日：2025-02-27
申请号：US18661936
申请日：2024-05-13
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , TOKYO INSTITUTE OF TECHNOLOGY
Inventor： JUNGAUN LEE , TOSHIHIKO TAKAHATA , TOSHIFUMI SHIROSAKI , JIRO HIROKAWA , TAKASHI TOMURA
Abstract: An antenna device includes: a waveguide section to propagate radio waves; and a cavity section forming a cavity to communicate with the waveguide path via a power supply opening located on one side of the waveguide section in a first direction. The cavity section includes: a first wall having the power supply opening; a second wall opposing the first wall and having radiation apertures, and a side wall that connects the first wall and the second wall. The side wall has an inclined surface on one side and the other side of the power supply opening in a second direction perpendicular to the first direction such that a distance from the power supply opening in the second direction increases toward the one side in the first direction.
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公开(公告)号：US12237225B2
公开(公告)日：2025-02-25
申请号：US17583754
申请日：2022-01-25
Inventor： Hiroki Miyake , Tatsuji Nagaoka
IPC: H01L21/78 , H01L21/425 , H01L21/46 , H01L21/461 , H01L21/479 , H01L29/04
Abstract: A method for manufacturing a semiconductor device includes: preparing a substrate made of a compound semiconductor containing a first element and a second element that is bonded to the first element and has an electronegativity smaller than that of the first element by 1.5 or more; causing an electric current to flow in the substrate; and dividing the substrate at a position including a current region where the electric current is caused to flow and along a cleavage plane of the substrate. A method for manufacturing a semiconductor device includes: stacking a first substrate and a second substrate each made of the compound semiconductor; and bonding the first substrate and the second substrate by causing an electric current to flow between the first substrate and the second substrate.
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公开(公告)号：US12199595B2
公开(公告)日：2025-01-14
申请号：US18328282
申请日：2023-06-02
Inventor： Hironori Akiyama
Abstract: A gate driver drives a gate of a semiconductor switching element. The gate driver includes a command signal output circuit, a pre-drive circuit and a drive circuit. The command signal output circuit outputs a current command signal that indicates a command value of a gate current as a current flowing through the gate of the semiconductor switching element. The pre-drive circuit receives the current command signal and generate a drive signal corresponding to the current command signal to output the drive signal. The drive circuit drives the gate of the semiconductor switching element based on the drive signal. The command signal output circuit switches the command value indicated by the current command signal while controlling a transient voltage at a desired target value. The drive circuit includes output circuits connected in parallel. Each of output circuits has at least one cascode circuit in which two MOSFETs are cascode-connected.
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公开(公告)号：US12191150B2
公开(公告)日：2025-01-07
申请号：US17590988
申请日：2022-02-02
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Kochi Prefectural Public University Corporation
Inventor： Hidemoto Tomita , Takashi Okawa , Toshiyuki Kawaharamura , Li Liu
Abstract: A switching includes a gallium nitride semiconductor and a gate insulation film. The gate insulation film is made of silicon oxide and disposed above the gallium nitride semiconductor layer. An interface between the gallium nitride insulation film and the gate insulation film is either free of a gallium oxide layer or provided with the gallium oxide layer with a thickness of 1 nanometer or smaller.
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公开(公告)号：US20240396454A1
公开(公告)日：2024-11-28
申请号：US18794268
申请日：2024-08-05
Inventor： Hideya MATSUNAGA , Kazunori KURATA
Abstract: In a power conversion apparatus, first to xth converters are connected in parallel to each other. A control unit outputs, based on command information related to an output of the power conversion apparatus, control information. A pulse generator selects, based on the control information, a number n of converters from the first to xth converters, n being an integer more than or equal to 2 and smaller than x. The number n is defined as a multiply-driven number n. The pulse generator generates, based on the control information, at least one multiple drive-pulse train that comprises n drive pulses for multiply driving the n selected converters. A variable determiner changes the multiply-driven number n.
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