METHOD FOR ESTIMATING READ REFERENCE VOLTAGES FOR FLASH STORAGE USING NEURAL NETWORK AND APPARATUS THEREFOR

    公开(公告)号:US20220121387A1

    公开(公告)日:2022-04-21

    申请号:US17076274

    申请日:2020-10-21

    Abstract: Disclosed is a method for estimating a read reference voltage for a flash memory using a neural network and an apparatus therefor. According to an embodiment of the inventive concept, a method for reading a flash memory may include receiving predetermined variable values with respect to a flash memory, estimating a read reference voltage corresponding to the received variable values, using a neural network of a pre-trained learning model with respect to the variable values, and reading the flash memory, using the estimated read reference voltage. The method may further include updating the learning model of the neural network by reflecting a difference in characteristics between individual chips constituting the flash memory.

    Method for stimulating, and apparatuses performing the same

    公开(公告)号:US11241592B2

    公开(公告)日:2022-02-08

    申请号:US16021805

    申请日:2018-06-28

    Abstract: Disclosed is a method and apparatus for more locally stimulating a desired stimulation region in a predetermined part of an object, the apparatus including a first ultrasonic wave generator configured to output a first ultrasonic beam to a predetermined part of an object, a second ultrasonic wave generator configured to output a second ultrasonic beam to the predetermined part of the object, and a controller configured to control the first ultrasonic wave generator and the second ultrasonic wave generator such that central axes of the first ultrasonic wave generator and the second ultrasonic wave generator are disposed on the same plane, and a crossing angle between the first ultrasonic beam and the second ultrasonic beam is a predetermined angle.

Patent Agency Ranking