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公开(公告)号：US20070290210A1
公开(公告)日：2007-12-20
申请号：US11776561
申请日：2007-07-12
申请人： Chih-Hsiung Chang , Yi-Wei Chen , Ming-Wei Sun
发明人： Chih-Hsiung Chang , Yi-Wei Chen , Ming-Wei Sun
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02595 , H01L21/2026
摘要： A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.
摘要翻译： 提供半导体器件和制造低温多晶硅膜的方法。 在衬底上形成非晶硅膜。 在非晶硅膜上形成绝缘层和激光吸收层。 执行光刻和蚀刻工艺以去除激光吸收层和绝缘层的部分以暴露非晶硅膜的部分。 利用激光结晶工艺将非晶硅膜转化为多晶硅膜。
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公开(公告)号：US20060060848A1
公开(公告)日：2006-03-23
申请号：US10907436
申请日：2005-03-31
申请人： Chih-Hsiung Chang , Yi-Wei Chen , Ming-Wei Sun
发明人： Chih-Hsiung Chang , Yi-Wei Chen , Ming-Wei Sun
CPC分类号： H01L21/02675 , H01L21/02532 , H01L21/02595 , H01L21/2026
摘要： A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.
摘要翻译： 提供半导体器件和制造低温多晶硅膜的方法。 在衬底上形成非晶硅膜。 在非晶硅膜上形成绝缘层和激光吸收层。 执行光刻和蚀刻工艺以去除激光吸收层和绝缘层的部分以暴露非晶硅膜的部分。 利用激光结晶工艺将非晶硅膜转化为多晶硅膜。
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23.发明授权公开(公告)号：US06239934B1
公开(公告)日：2001-05-29
申请号：US09111361
申请日：1998-07-06
IPC分类号： G11B15087
CPC分类号： G11B5/59688 , G11B5/012 , G11B5/02 , G11B5/024 , G11B5/4886 , G11B5/5526 , G11B5/5534 , G11B5/59627 , G11B5/59644 , G11B19/00 , G11B19/02 , G11B19/12 , G11B23/0302 , G11B23/0303 , G11B23/031 , G11B23/0318
摘要： A higher-capacity disk drive system and a higher-capacity removable disk cartridge adapted for downward compatibility with older, lower-capacity disk drive systems, wherein a unique control information format is stored on higher-capacity removable disk cartridges to distinguish them from older, lower-capacity removable disk cartridges and thereby to facilitate cartridge capacity recognition by the higher-capacity disk drive system. Upon recognizing the capacity of an inserted removable disk cartridge, the higher-capacity disk drive system can read and write data to the removable disk cartridge such that data which it stores on a lower-capacity removable disk cartridge may be read by lower-capacity disk drive systems.
摘要翻译： 更高容量的磁盘驱动器系统和更高容量的可移动磁盘盒适用于与旧的较低容量的磁盘驱动器系统的向下兼容性，其中独特的控制信息格式存储在较高容量的可移动磁盘盒上，以将其与旧的， 较低容量的可移动磁盘盒，从而便于高容量磁盘驱动器系统的磁带盒容量识别。 在识别插入的可移动磁盘盒的容量时，高容量磁盘驱动器系统可以将数据读取和写入到可移动磁盘盒，使得存储在低容量可移动磁盘盒上的数据可以被较低容量的磁盘读取 驱动系统。
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公开(公告)号：US08781770B2
公开(公告)日：2014-07-15
申请号：US12941302
申请日：2010-11-08
IPC分类号： G01R31/36
CPC分类号： H01M10/48 , G01R31/361
摘要： A method and a system for estimating a battery percentage are provided. The method includes the following steps. A coulomb counter calculated battery index (CCBI) relating to an accumulated amount of current flowing out of a battery is obtained. A battery voltage curve tracer calculated battery index (VCBI) relating to a temperature, an output voltage of the battery, and a current flowing out of the battery is obtained. A modified calculated battery index (MCBI) ranging between the CCBI and the VCBI is generated according to the CCBI and the VCBI.
摘要翻译： 提供了一种用于估计电池百分比的方法和系统。 该方法包括以下步骤。 获得与从电池流出的电流的累积量有关的库仑计数器计算出的电池指数（CCBI）。 获得与温度，电池的输出电压以及从电池流出的电流有关的电池电压曲线跟踪器计算的电池指数（VCBI）。 根据CCBI和VCBI生成CCBI和VCBI之间的修改计算电池指数（MCBI）。
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公开(公告)号：US20110265847A1
公开(公告)日：2011-11-03
申请号：US13180892
申请日：2011-07-12
申请人： Yu-Chun Peng , Chih-Hsiung Chang , Yi-Kai Lin , Chen-Liang Liao
发明人： Yu-Chun Peng , Chih-Hsiung Chang , Yi-Kai Lin , Chen-Liang Liao
IPC分类号： H01L31/05 , H01L31/0224
CPC分类号： H01L31/0504 , H01L31/0201 , H01L31/046 , Y02E10/50
摘要： A thin-film solar cell module includes a substrate, a plurality of thin-film solar cells, a first ribbon, and a second ribbon. The thin-film solar cells are disposed on the substrate in a first direction, and the thin-film solar cell module has an isolation zone between the two thin-film solar cells next to each other. Each of the thin-film solar cells includes a first electrode layer, a photoelectric conversion layer, and a second electrode layer, in which the photoelectric conversion layer and the second electrode layer are disposed on the first electrode layer with a portion of the first electrode layer exposed. The first ribbon is used for connecting the exposed portion of the first electrode layer in each of the thin-film solar cells, and the second ribbon is used for connecting each of the second electrode layers.
摘要翻译： 薄膜太阳能电池模块包括基板，多个薄膜太阳能电池，第一带状物和第二带状物。 薄膜太阳能电池在第一方向上设置在基板上，薄膜太阳能电池模块在彼此相邻的两个薄膜太阳能电池之间具有隔离区。 每个薄膜太阳能电池包括第一电极层，光电转换层和第二电极层，其中光电转换层和第二电极层设置在第一电极层上，其中第一电极的一部分 层暴露。 第一带被用于连接薄膜太阳能电池中的每一个中的第一电极层的暴露部分，第二带用于连接每个第二电极层。
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公开(公告)号：US07649207B2
公开(公告)日：2010-01-19
申请号：US11610541
申请日：2006-12-14
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/4908 , H01L29/42384
摘要： A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.
摘要翻译： 公开了一种薄膜晶体管，其包括衬底，覆盖衬底的多晶硅层，覆盖多晶硅层的栅极绝缘层，栅极电极，覆盖栅极电极和栅极绝缘层的电介质中间层，以及覆盖 介电中间层。 具体地，栅电极包括覆盖栅极绝缘层的第一电极层和基本上覆盖第一电极层的上表面的第二电极层。 第一和第二电极层各自具有基本相同的轮廓，其锥角小于约90度。
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公开(公告)号：US20070267635A1
公开(公告)日：2007-11-22
申请号：US11610541
申请日：2006-12-14
IPC分类号： H01L29/04
CPC分类号： H01L29/4908 , H01L29/42384
摘要： A thin film transistor is disclosed, comprising a substrate, a polysilicon layer overlying the substrate, a gate insulating layer overlying the polysilicon layer, a gate electrode, a dielectric interlayer overlying the gate electrode and gate insulating layer, and a source/drain electrode overlying the dielectric interlayer. Specifically, the gate electrode comprises a first electrode layer overlying the gate insulating layer and a second electrode layer essentially overlying an upper surface of the first electrode layer. The first and second electrode layers each has substantially the same profile with a taper angle of less than about 90 degrees.
摘要翻译： 公开了一种薄膜晶体管，其包括衬底，覆盖衬底的多晶硅层，覆盖多晶硅层的栅极绝缘层，栅极电极，覆盖栅极电极和栅极绝缘层的电介质中间层，以及覆盖 介电中间层。 具体地，栅电极包括覆盖栅极绝缘层的第一电极层和基本上覆盖第一电极层的上表面的第二电极层。 第一和第二电极层各自具有基本相同的轮廓，其锥角小于约90度。
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28.发明申请公开(公告)号：US20060128045A1
公开(公告)日：2006-06-15
申请号：US11258910
申请日：2005-10-27
申请人： Tsung-Yi Hsu , Chih-Hsiung Chang
发明人： Tsung-Yi Hsu , Chih-Hsiung Chang
IPC分类号： H01L21/00
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L27/3244 , H01L51/56
摘要： A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.
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29.发明申请公开(公告)号：US20060009013A1
公开(公告)日：2006-01-12
申请号：US11043564
申请日：2005-01-26
申请人： Yi-Wei Chen , Chih-Hsiung Chang , Tsung-Yi Hsu
发明人： Yi-Wei Chen , Chih-Hsiung Chang , Tsung-Yi Hsu
IPC分类号： H01L21/00
CPC分类号： H01L21/02532 , H01L21/02595 , H01L21/02686 , H01L21/02691 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/66757 , H01L29/78621
摘要： A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.
摘要翻译： 提供了制造多晶硅层的方法。 首先，提供基板。 在基板上形成具有第二区域和第一区域的非晶硅层。 第一区域比第二区域厚。 非晶硅层完全熔化，形成具有第一熔融区和第二熔融区的熔融非晶硅层。 第一熔融区域的底部中心的温度低于第二熔融区域的温度和第一熔融区域的顶部的温度。 熔化的非晶硅层被结晶以形成多晶硅层。 结晶从第一熔化区域的底部中心到第二熔融区域和第一熔融区域的顶部开始。
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