Method for selective laser crystallization and display panel fabricated by using the same
    1.
    发明授权
    Method for selective laser crystallization and display panel fabricated by using the same 有权
    用于选择性激光结晶的方法和使用该方法制造的显示面板

    公开(公告)号:US07608529B2

    公开(公告)日:2009-10-27

    申请号:US11987445

    申请日:2007-11-30

    IPC分类号: H01L21/20 H01L21/36

    摘要: A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

    摘要翻译: 显示面板包括具有显示区域(例如有源有机发光区域)和电路驱动区域的基板; 以及形成在所述基板上并具有分别对应于所述显示区域和电路驱动区域的第一多晶硅部分和第二多晶硅部分的多晶硅层,其中通过连续波(CW)激光退火法结晶的所述第二多晶硅部分的晶粒尺寸为 大于通过准分子激光退火(ELA)法结晶的第一多晶硅部分的尺寸。

    Method for selective laser crystallization and display panel fabricated by using the same
    2.
    发明申请
    Method for selective laser crystallization and display panel fabricated by using the same 有权
    用于选择性激光结晶的方法和使用该方法制造的显示面板

    公开(公告)号:US20080090340A1

    公开(公告)日:2008-04-17

    申请号:US11987445

    申请日:2007-11-30

    IPC分类号: H01L21/84

    摘要: A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

    摘要翻译: 显示面板包括具有显示区域(例如有源有机发光区域)和电路驱动区域的基板; 以及形成在所述基板上并具有分别对应于所述显示区域和电路驱动区域的第一多晶硅部分和第二多晶硅部分的多晶硅层,其中通过连续波(CW)激光退火法结晶的所述第二多晶硅部分的晶粒尺寸为 大于通过准分子激光退火(ELA)法结晶的第一多晶硅部分的尺寸。

    Method for manufacturing polysilicon layer and method for manufacturing thin film transistor thereby
    3.
    发明授权
    Method for manufacturing polysilicon layer and method for manufacturing thin film transistor thereby 有权
    多晶硅层的制造方法及其制造方法

    公开(公告)号:US07081400B2

    公开(公告)日:2006-07-25

    申请号:US11043564

    申请日:2005-01-26

    IPC分类号: H01L21/20

    摘要: A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.

    摘要翻译: 提供了制造多晶硅层的方法。 首先,提供基板。 在基板上形成具有第二区域和第一区域的非晶硅层。 第一区域比第二区域厚。 非晶硅层完全熔化,形成具有第一熔融区和第二熔融区的熔融非晶硅层。 第一熔融区域的底部中心的温度低于第二熔融区域的温度和第一熔融区域的顶部的温度。 熔融的非晶硅层被结晶以形成多晶硅层。 结晶从第一熔化区域的底部中心到第二熔融区域和第一熔融区域的顶部开始。

    Method for manufacturing polysilicon layer and a TFT using the same
    5.
    发明申请
    Method for manufacturing polysilicon layer and a TFT using the same 有权
    制造多晶硅层的方法和使用该多晶硅层的TFT

    公开(公告)号:US20060009013A1

    公开(公告)日:2006-01-12

    申请号:US11043564

    申请日:2005-01-26

    IPC分类号: H01L21/00

    摘要: A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.

    摘要翻译: 提供了制造多晶硅层的方法。 首先,提供基板。 在基板上形成具有第二区域和第一区域的非晶硅层。 第一区域比第二区域厚。 非晶硅层完全熔化,形成具有第一熔融区和第二熔融区的熔融非晶硅层。 第一熔融区域的底部中心的温度低于第二熔融区域的温度和第一熔融区域的顶部的温度。 熔化的非晶硅层被结晶以形成多晶硅层。 结晶从第一熔化区域的底部中心到第二熔融区域和第一熔融区域的顶部开始。

    GAS PURIFYING APPARATUS
    6.
    发明申请

    公开(公告)号:US20200086268A1

    公开(公告)日:2020-03-19

    申请号:US16382203

    申请日:2019-04-12

    IPC分类号: B01D53/18 B01D53/14

    摘要: A gas purifying apparatus is used to receive chemical liquid mixing with a gas, and used to clean the gas. The gas purifying apparatus includes a plurality of liquid status detection sensors, a plurality of gas status detection sensors, a plurality of pumping motors, a gas driving motor and a controller. The liquid status detection sensors are disposed in a chemical liquid transmission path, and detect a plurality of liquid status information of the chemical liquid. The gas status detection sensors are disposed in a gas transmission path, and detect a plurality of gas status information of the gas. The controller performs an operation on the liquid status information and the gas status information to adjust a first setting value and a second setting value. The first setting value and the second setting value are respectively used to drive the pumping motors and the gas driving motor.

    LOW VOLTAGE THIN FILM PHOTOVOLTAIC MODULE
    8.
    发明申请
    LOW VOLTAGE THIN FILM PHOTOVOLTAIC MODULE 审中-公开
    低电压薄膜光伏模块

    公开(公告)号:US20120227782A1

    公开(公告)日:2012-09-13

    申请号:US13046471

    申请日:2011-03-11

    IPC分类号: H01L31/05

    摘要: In one aspect of the present invention, a photovoltaic module includes a plurality of sub-modules. Each sub-module includes a plurality of photovoltaic cells spatially arranged as an array, each cell having first and second conductive layers sandwiching an active layer therebetween. The cells in each sub-module are electrically connected to each other in series. Each sub-module further includes positive and negative electrodes formed on the second conductive layers of the first and last cells, respectively, in a respective sub-module. The positive electrode of each sub-module is electrically connected to each other and the negative electrode of each sub-module is electrically connected to each other such that the plurality of sub-modules is electrically connected in parallel. The plurality of sub-modules is spatially arranged next to each other as an array such that at least one sub-module is spatially separated from its immediately next sub-module by a gap.

    摘要翻译: 在本发明的一个方面,光伏组件包括多个子模块。 每个子模块包括空间上排列成阵列的多个光伏电池,每个电池具有夹在其间的活性层的第一和第二导电层。 每个子模块中的单元彼此串联电连接。 每个子模块还包括在相应的子模块中分别形成在第一和最后单元的第二导电层上的正极和负极。 每个子模块的正电极彼此电连接,并且每个子模块的负电极彼此电连接,使得多个子模块并联电连接。 多个子模块在空间上彼此相邻布置为阵列,使得至少一个子模块与其紧邻的下一个子模块在空间上与间隙分离。

    Sequential lateral solidification mask
    9.
    发明授权
    Sequential lateral solidification mask 有权
    顺序侧面凝固掩模

    公开(公告)号:US07649206B2

    公开(公告)日:2010-01-19

    申请号:US11450413

    申请日:2006-06-12

    摘要: A sequential lateral solidification (SLS) mask comprises a plurality of parallelizing repeat patterns. Each of the patterns further comprises a major symmetrical axis and a short axis, and each of the patterns is also composed of first units and second units, in which both the first unit and the second unit comprise respectively a plurality of light transmitting portions and light absorption portions. The first units are positioned in mirror symmetry to the second units via the major symmetrical axis.

    摘要翻译: 顺序横向固化(SLS)掩模包括多个平行化的重复图案。 每个图案还包括主对称轴和短轴,并且每个图案也由第一单元和第二单元组成,其中第一单元和第二单元两者分别包括多个透光部分和光 吸收部分。 第一单元经由主对称轴线与第二单元以镜像对称的方式定位。

    Sequential lateral solidification mask
    10.
    发明申请
    Sequential lateral solidification mask 有权
    顺序侧面凝固掩模

    公开(公告)号:US20070026648A1

    公开(公告)日:2007-02-01

    申请号:US11450413

    申请日:2006-06-12

    IPC分类号: H01L21/20 G03F1/00

    摘要: A sequential lateral solidification (SLS) mask comprises a plurality of parallelizing repeat patterns. Each of the patterns further comprises a major symmetrical axis and a short axis, and each of the patterns is also composed of first units and second units, in which both the first unit and the second unit comprise respectively a plurality of light transmitting portions and light absorption portions. The first units are positioned in mirror symmetry to the second units via the major symmetrical axis.

    摘要翻译: 顺序横向固化(SLS)掩模包括多个平行化的重复图案。 每个图案还包括主对称轴和短轴,并且每个图案也由第一单元和第二单元组成,其中第一单元和第二单元两者分别包括多个透光部分和光 吸收部分。 第一单元经由主对称轴线与第二单元以镜像对称的方式定位。