公开(公告)号：US07081400B2

公开(公告)日：2006-07-25

申请号：US11043564

申请日：2005-01-26

申请人： Yi-Wei Chen ,  Chih-Hsiung Chang ,  Tsung-Yi Hsu

发明人： Yi-Wei Chen ,  Chih-Hsiung Chang ,  Tsung-Yi Hsu

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621

摘要： A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.

摘要翻译： 提供了制造多晶硅层的方法。 首先，提供基板。 在基板上形成具有第二区域和第一区域的非晶硅层。 第一区域比第二区域厚。 非晶硅层完全熔化，形成具有第一熔融区和第二熔融区的熔融非晶硅层。 第一熔融区域的底部中心的温度低于第二熔融区域的温度和第一熔融区域的顶部的温度。 熔融的非晶硅层被结晶以形成多晶硅层。 结晶从第一熔化区域的底部中心到第二熔融区域和第一熔融区域的顶部开始。

公开(公告)号：US20060009013A1

公开(公告)日：2006-01-12

申请号：US11043564

申请日：2005-01-26

申请人： Yi-Wei Chen ,  Chih-Hsiung Chang ,  Tsung-Yi Hsu

发明人： Yi-Wei Chen ,  Chih-Hsiung Chang ,  Tsung-Yi Hsu

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02595 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78621

摘要： A method for manufacturing polysilicon layer is provided. At first, a substrate is provided. An amorphous silicon layer having a second region and a first region is formed on the substrate. The first region is thicker than the second region. The amorphous silicon layer is completely melted to form a melted amorphous silicon layer having a first melted region and a second melted region. The temperature of the bottom center of the first melted region is lower than that of the second melted region and that of the top of the first melted region. The melted amorphous silicon layer is crystallized to form a polysilicon layer. The crystallization begins from the bottom center of the first melted region to the second melted region and the top of the first melted region.

摘要翻译： 提供了制造多晶硅层的方法。 首先，提供基板。 在基板上形成具有第二区域和第一区域的非晶硅层。 第一区域比第二区域厚。 非晶硅层完全熔化，形成具有第一熔融区和第二熔融区的熔融非晶硅层。 第一熔融区域的底部中心的温度低于第二熔融区域的温度和第一熔融区域的顶部的温度。 熔化的非晶硅层被结晶以形成多晶硅层。 结晶从第一熔化区域的底部中心到第二熔融区域和第一熔融区域的顶部开始。

公开(公告)号：US07608529B2

公开(公告)日：2009-10-27

申请号：US11987445

申请日：2007-11-30

申请人： Tsung-Yi Hsu ,  Chih-Hsiung Chang

发明人： Tsung-Yi Hsu ,  Chih-Hsiung Chang

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L51/56

摘要： A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

摘要翻译： 显示面板包括具有显示区域（例如有源有机发光区域）和电路驱动区域的基板; 以及形成在所述基板上并具有分别对应于所述显示区域和电路驱动区域的第一多晶硅部分和第二多晶硅部分的多晶硅层，其中通过连续波（CW）激光退火法结晶的所述第二多晶硅部分的晶粒尺寸为 大于通过准分子激光退火（ELA）法结晶的第一多晶硅部分的尺寸。

公开(公告)号：US20080090340A1

公开(公告)日：2008-04-17

申请号：US11987445

申请日：2007-11-30

申请人： Tsung-Yi Hsu ,  Chih-Hsiung Chang

发明人： Tsung-Yi Hsu ,  Chih-Hsiung Chang

IPC分类号： H01L21/84

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L51/56

摘要： A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

摘要翻译： 显示面板包括具有显示区域（例如有源有机发光区域）和电路驱动区域的基板; 以及形成在所述基板上并具有分别对应于所述显示区域和电路驱动区域的第一多晶硅部分和第二多晶硅部分的多晶硅层，其中通过连续波（CW）激光退火法结晶的所述第二多晶硅部分的晶粒尺寸为 大于通过准分子激光退火（ELA）法结晶的第一多晶硅部分的尺寸。

公开(公告)号：US20060128045A1

公开(公告)日：2006-06-15

申请号：US11258910

申请日：2005-10-27

申请人： Tsung-Yi Hsu ,  Chih-Hsiung Chang

发明人： Tsung-Yi Hsu ,  Chih-Hsiung Chang

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L51/56

摘要： A display panel comprises a substrate having a displaying region (such as active organic light emitting region) and a circuit driving region; and a polysilicon layer formed on the substrate and having a first polysilicon portion and a second polysilicon portion respectively corresponding to the displaying region and circuit driving region, wherein the grain size of the second polysilicon portion crystallized by continuous wave (CW) laser annealing method is larger than that of the first polysilicon portion crystallized by excimer laser annealing (ELA) method.

公开(公告)号：US20070290210A1

公开(公告)日：2007-12-20

申请号：US11776561

申请日：2007-07-12

申请人： Chih-Hsiung Chang ,  Yi-Wei Chen ,  Ming-Wei Sun

发明人： Chih-Hsiung Chang ,  Yi-Wei Chen ,  Ming-Wei Sun

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026

摘要： A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.

摘要翻译： 提供半导体器件和制造低温多晶硅膜的方法。 在衬底上形成非晶硅膜。 在非晶硅膜上形成绝缘层和激光吸收层。 执行光刻和蚀刻工艺以去除激光吸收层和绝缘层的部分以暴露非晶硅膜的部分。 利用激光结晶工艺将非晶硅膜转化为多晶硅膜。

公开(公告)号：US20060060848A1

公开(公告)日：2006-03-23

申请号：US10907436

申请日：2005-03-31

申请人： Chih-Hsiung Chang ,  Yi-Wei Chen ,  Ming-Wei Sun

发明人： Chih-Hsiung Chang ,  Yi-Wei Chen ,  Ming-Wei Sun

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026

摘要： A semiconductor device and a method of fabricating a low-temperature polysilicon film are provided. An amorphous silicon film is formed over a substrate. An insulating layer and a laser absorption layer are formed over the amorphous silicon film. A photolithographic and etching process is performed to remove portions of the laser absorption layer and the insulating layer to expose portions of the amorphous silicon film. A laser crystallization process is utilized to convert the amorphous silicon film into a polysilicon film.

摘要翻译： 提供半导体器件和制造低温多晶硅膜的方法。 在衬底上形成非晶硅膜。 在非晶硅膜上形成绝缘层和激光吸收层。 执行光刻和蚀刻工艺以去除激光吸收层和绝缘层的部分以暴露非晶硅膜的部分。 利用激光结晶工艺将非晶硅膜转化为多晶硅膜。

公开(公告)号：US20200086268A1

公开(公告)日：2020-03-19

申请号：US16382203

申请日：2019-04-12

申请人： Chih-Hui Su ,  Tien-Hua Li ,  Chih-Hsiung Chang ,  Sheng-Wen Wang ,  Ming-Chin Tsai

发明人： Chih-Hui Su ,  Tien-Hua Li ,  Chih-Hsiung Chang ,  Sheng-Wen Wang ,  Ming-Chin Tsai

IPC分类号： B01D53/18 ,  B01D53/14

摘要： A gas purifying apparatus is used to receive chemical liquid mixing with a gas, and used to clean the gas. The gas purifying apparatus includes a plurality of liquid status detection sensors, a plurality of gas status detection sensors, a plurality of pumping motors, a gas driving motor and a controller. The liquid status detection sensors are disposed in a chemical liquid transmission path, and detect a plurality of liquid status information of the chemical liquid. The gas status detection sensors are disposed in a gas transmission path, and detect a plurality of gas status information of the gas. The controller performs an operation on the liquid status information and the gas status information to adjust a first setting value and a second setting value. The first setting value and the second setting value are respectively used to drive the pumping motors and the gas driving motor.

公开(公告)号：US20180018295A1

公开(公告)日：2018-01-18

申请号：US15213347

申请日：2016-07-18

申请人： Johnny Chen ,  Chih-Hsiung Chang ,  Tsung-Min Chen

发明人： Johnny Chen ,  Chih-Hsiung Chang ,  Tsung-Min Chen

IPC分类号： G06F13/42 ,  G06F13/40 ,  G06F13/38

CPC分类号： G06F13/4282 ,  G06F13/385 ,  G06F13/4022

摘要： The invention is used for a dock between a battery-operated device and a power adapter. The method includes: a) providing a USB dock with a first USB type-C connector and a second USB type-C connector, wherein the two USB type-C connectors are electrically connected through a switch module; b) connecting a first USB device to the first USB type-C connector; c) verifying whether the first USB device sends out a USB host command or not; d) setting the first USB type-C connector and the second USB type-C connector to serve as a host port and a device port, respectively, if yes in step c); and e) setting the first USB type-C connector and the second USB type-C connector to serve as a device port and a host port, respectively, if no in step c).

公开(公告)号：US20120227782A1

公开(公告)日：2012-09-13

申请号：US13046471

申请日：2011-03-11

申请人： Chin-Yao Tsai ,  Yu-Chun Peng ,  Po-Han Lin ,  Yi-Kai Lin ,  Chen-Liang Liao ,  Chih-Hsiung Chang ,  Kun-Chih Lin

发明人： Chin-Yao Tsai ,  Yu-Chun Peng ,  Po-Han Lin ,  Yi-Kai Lin ,  Chen-Liang Liao ,  Chih-Hsiung Chang ,  Kun-Chih Lin

IPC分类号： H01L31/05

CPC分类号： H01L31/05 ,  H01L31/0201 ,  H01L31/046 ,  Y02E10/50

摘要： In one aspect of the present invention, a photovoltaic module includes a plurality of sub-modules. Each sub-module includes a plurality of photovoltaic cells spatially arranged as an array, each cell having first and second conductive layers sandwiching an active layer therebetween. The cells in each sub-module are electrically connected to each other in series. Each sub-module further includes positive and negative electrodes formed on the second conductive layers of the first and last cells, respectively, in a respective sub-module. The positive electrode of each sub-module is electrically connected to each other and the negative electrode of each sub-module is electrically connected to each other such that the plurality of sub-modules is electrically connected in parallel. The plurality of sub-modules is spatially arranged next to each other as an array such that at least one sub-module is spatially separated from its immediately next sub-module by a gap.

摘要翻译： 在本发明的一个方面，光伏组件包括多个子模块。 每个子模块包括空间上排列成阵列的多个光伏电池，每个电池具有夹在其间的活性层的第一和第二导电层。 每个子模块中的单元彼此串联电连接。 每个子模块还包括在相应的子模块中分别形成在第一和最后单元的第二导电层上的正极和负极。 每个子模块的正电极彼此电连接，并且每个子模块的负电极彼此电连接，使得多个子模块并联电连接。 多个子模块在空间上彼此相邻布置为阵列，使得至少一个子模块与其紧邻的下一个子模块在空间上与间隙分离。