公开(公告)号：US07629055B2

公开(公告)日：2009-12-08

申请号：US11150740

申请日：2005-06-10

Applicant: Johann Trenkler

Inventor： Johann Trenkler

IPC: B32B9/00

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G03F7/70958 ,  G21K1/062

Abstract: A limiting factor in the operation of EUV lithographic devices is the lifetime or the reflectivity of the reflective optics that is reduced by contamination with carbon-containing substances. Protective coatings that are resistant to oxidation or are inert against water are already known.According to the invention it is proposed to deposit protective coatings on, for example, multilayers that suppress the growth of carbon-containing substances in combination with layers that are inert against residual gas atmosphere and energy input. Even with a long operating time a high reflectivity is thereby retained.The protective coatings may be deposited by electron-beam vaporization, magnetron- or ion-beam sputtering.

Abstract translation: EUV光刻设备操作的一个限制因素是反射光学器件的寿命或反射率，其通过含碳物质的污染而减少。 耐氧化或对水是惰性的保护涂层是已知的。 根据本发明，提出了将保护涂层沉积在例如抑制含碳物质的生长与多余层的组合的多层膜上，这些层对残留气体气氛和能量输入是惰性的。 即使在较长的操作时间内也能保持较高的反射率。 保护涂层可以通过电子束蒸发，磁控管或离子束溅射沉积。

公开(公告)号：US20090251772A1

公开(公告)日：2009-10-08

申请号：US12399775

申请日：2009-03-06

Applicant: Johann TRENKLER ,  Hans-Jurgen Mann ,  Udo Nothelfer

Inventor： Johann TRENKLER ,  Hans-Jurgen Mann ,  Udo Nothelfer

IPC: G02B5/00

CPC classification number: G02B5/0891 ,  B82Y10/00 ,  G02B5/0816 ,  G02B5/085 ,  G03F7/7015 ,  G03F7/70916 ,  G03F7/70958 ,  G21K1/062

Abstract: A reflective optical element and an EUV lithography appliance containing one such element are provided, the appliance displaying a low propensity to contamination. According to the invention, the reflective optical element has a protective layer system consisting of at least one layer. The optical characteristics of the protective layer system are between those of a spacer and an absorber, or correspond to those of a spacer. The selection of a material with the smallest possible imaginary part and a real part which is as close to 1 as possible in terms of the refractive index leads to a plateau-type reflectivity course according to the thickness of the protective layer system between two thicknesses d1 and d2. The thickness of the protective layer system is selected in such a way that it is less than d2.

Abstract translation: 提供了包含一个这样的元件的反射光学元件和EUV光刻设备，该器具显示出低的污染倾向。 根据本发明，反射型光学元件具有由至少一层构成的保护层系统。 保护层系统的光学特性在间隔物和吸收体的光学特性之间，或者对应于间隔物的光学特性。 选择具有尽可能小的虚部的材料和在折射率方面尽可能接近1的实部导致根据两个厚度之间的保护层系统的厚度d1的平台型反射率过程 和d2。 保护层系统的厚度选择为小于d2。

公开(公告)号：US07116394B2

公开(公告)日：2006-10-03

申请号：US10738976

申请日：2003-12-19

Applicant: Levinus Pieter Bakker ,  Ralph Kurt ,  Bastiaan Matthias Mertens ,  Markus Weiss ,  Johann Trenkler ,  Wolfgang Singer

Inventor： Levinus Pieter Bakker ,  Ralph Kurt ,  Bastiaan Matthias Mertens ,  Markus Weiss ,  Johann Trenkler ,  Wolfgang Singer

IPC: G03B27/52 ,  G03B27/42

CPC classification number: G03F7/70916 ,  B08B6/00 ,  B08B7/0035 ,  G03F7/70925

Abstract: A cleaning system for removing contamination from at least a part of a surface of a component in a lithographic projection apparatus is disclosed. The cleaning system includes an electric field generator that generates an electric field to provide cleaning particles near the surface of the component.

Abstract translation: 公开了一种用于去除光刻投影装置中的部件表面的至少一部分的污染物的清洁系统。 清洁系统包括产生电场以在组件的表面附近提供清洁颗粒的电场发生器。