公开(公告)号：US08779174B2

公开(公告)日：2014-07-15

申请号：US12996690

申请日：2009-06-12

申请人： Ken-ichi Tada ,  Toshiki Yamamoto ,  Hirokazu Chiba ,  Kohei Iwanaga ,  Atsushi Maniwa ,  Tadahiro Yotsuya ,  Noriaki Oshima

发明人： Ken-ichi Tada ,  Toshiki Yamamoto ,  Hirokazu Chiba ,  Kohei Iwanaga ,  Atsushi Maniwa ,  Tadahiro Yotsuya ,  Noriaki Oshima

IPC分类号： C07F7/28

CPC分类号： H01L21/28556 ,  B01J21/063 ,  B01J31/1805 ,  B01J35/004 ,  B01J2531/46 ,  C07C209/54 ,  C07C209/66 ,  C07C211/65 ,  C07C251/08 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02186 ,  H01L21/02271

摘要： A subject for the invention is to provide novel titanium complexes which have a high vapor pressure and high thermal stability and serve as an excellent material for producing a titanium-containing thin film by a technique such as the CVD method or ALD method and to further provide processes for producing these complexes, titanium-containing thin films produced from the complexes, and a process for producing the thin films. The invention relates to producing a titanium complex represented by general formula (1): (wherein R1 and R4 each independently represent an alkyl group having 1-16 carbon atoms; R2 and R3 each independently represent a hydrogen atom or an alkyl group having 1-3 carbon atoms; and R5 represents an alkyl group which has 1-16 carbon atoms and may have been substituted with one or more fluorine atoms) and to producing a titanium-containing thin film using the complex.

摘要翻译： 本发明的主题是提供具有高蒸气压和高热稳定性的新型钛络合物，并且通过诸如CVD法或ALD法的技术制造含钛薄膜的优异材料，并进一步提供 用于制备这些络合物的方法，由络合物制备的含钛薄膜以及薄膜的制造方法。 本发明涉及制备由通式（1）表示的钛络合物：（其中R 1和R 4各自独立地表示具有1-16个碳原子的烷基; R 2和R 3各自独立地表示氢原子或具有1- 3个碳原子; R5表示具有1-16个碳原子并且可以被一个或多个氟原子取代的烷基），并使用该络合物制备含钛薄膜。

公开(公告)号：US20100010248A1

公开(公告)日：2010-01-14

申请号：US12439364

申请日：2007-08-20

申请人： Ken-ichi Tada ,  Taishi Furukawa ,  Koichiro Inaba ,  Tadahiro Yotsuya ,  Hirokazu Chiba ,  Toshiki Yamamoto ,  Tetsu Yamakawa ,  Noriaki Oshima

发明人： Ken-ichi Tada ,  Taishi Furukawa ,  Koichiro Inaba ,  Tadahiro Yotsuya ,  Hirokazu Chiba ,  Toshiki Yamamoto ,  Tetsu Yamakawa ,  Noriaki Oshima

IPC分类号： C07F19/00

CPC分类号： C23C16/18 ,  C01G33/00 ,  C01G35/00 ,  C01P2002/88 ,  C07C211/65 ,  C07C251/08 ,  C07F9/005 ,  C23C16/405

摘要： Objects of the present invention are to provide a novel niobium or tantalum complex having good vapor pressure and becoming a raw material for producing a niobium- or tantalum-containing thin film by a method such as CVD method, ALD method or the like, a method for producing the same, a metal-containing thin film using the same, and a method for producing the same. The present invention relates to producing an imide complex represented by the general formula (1) by, for example, the reaction between M1(NR1)X3(L)r (2) and an alkali metal alkoxide (3): (wherein M1 represents niobium atom or tantalum atom, R1 represents an alkyl group having from 1 to 12 carbon atoms, R2 represents an alkyl group having from 2 to 13 carbon atoms, X represents halogen atom, r is 1 when L is 1,2-dimethoxyethane ligand, r is 2 when L is pyridine ligand, and M2 represents an alkali metal), and producing a niobium- or tantalum-containing thin film by using the imide complex (1) as a raw material.

摘要翻译： 本发明的目的是提供一种具有良好蒸气压的新型铌或钽络合物，并且通过诸如CVD法，ALD法等的方法成为生产含铌或钽的薄膜的原料， 为了制造它们，使用该薄膜的含金属薄膜及其制造方法。 本发明涉及通过例如M1（NR1）X3（L）r（2）和碱金属醇盐（3）之间的反应来制备由通式（1）表示的酰亚胺络合物：（其中M1表示 铌原子或钽原子，R1表示碳原子数1〜12的烷基，R2表示碳原子数2〜13的烷基，X表示卤素原子，当L为1,2-二甲氧基乙烷配体时，r为1， 当L为吡啶配体时，r为2，M2表示碱金属，通过使用酰亚胺络合物（1）作为原料制造含有铌或钽的薄膜。