公开(公告)号：US5572051A

公开(公告)日：1996-11-05

申请号：US351013

申请日：1994-12-07

申请人： Kenichi Arakawa ,  Kenji Nakahara

发明人： Kenichi Arakawa ,  Kenji Nakahara

IPC分类号： H01L27/146 ,  H01L29/768 ,  H04N5/335 ,  H04N5/353 ,  H04N5/365 ,  H04N5/372 ,  H01L27/148

CPC分类号： H01L29/76816

摘要： A solid state image sensing device, comprises: an n-type semiconductor substrate (11), a p-type well (12) formed on a surface of the semiconductor substrate, and a p.sup.+ -type diffusion layer (13, 21) having an impurity concentration higher than that of the well. In particular, the P.sup.+ -type diffusion layer (13) is formed so as to cover at least a part of circumference of an n-type diffusion layer (17) of a load transistor (N3) formed in the well (12) as a source follower circuit. Instead, the P.sup.+ -type diffusion layer (21) is formed between the n-type diffusion layer (17) of the load transistor (N3) and the semiconductor substrate (11). In both the cases, since the n-type diffusion layer (17) of the load transistor (N3) of the source follower circuit is covered with the second conductivity diffusion layer (13, 21) higher in impurity concentration than that of the well, even when a pulse is applied to the semiconductor substrate during electronic shutter operation, the p-type well (12) is not depleted, so that it is possible to prevent punch through current (I) from flowing from the n-type diffusion layer (17) of the load transistor (N3) to the n-type substrate (11).

摘要翻译： 一种固体摄像装置，包括：n型半导体衬底（11），形成在所述半导体衬底的表面上的p型阱（12），以及p +型扩散层（13,21），其具有 杂质浓度高于井。 特别地，形成P +型扩散层（13），以覆盖形成在阱（12）中的负载晶体管（N3）的n型扩散层（17）的至少一部分周边，作为 源极跟随器电路。 而是在负载晶体管（N3）的n型扩散层（17）和半导体衬底（11）之间形成P +型扩散层（21）。 在这两种情况下，由于源极跟随器电路的负极晶体管（N3）的n型扩散层（17）被杂质浓度高于阱的第二导电性扩散层（13,21）覆盖， 即使在电子快门操作期间向半导体衬底施加脉冲时，p型阱（12）也不会耗尽，从而可以防止穿通电流（I）从n型扩散层（ 负载晶体管（N3）的电阻（17）与n型衬底（11）的连接。

公开(公告)号：US5396091A

公开(公告)日：1995-03-07

申请号：US195167

申请日：1994-02-14

申请人： Miho Kobayashi ,  Tomoaki Iizuka ,  Hideki Motoyama ,  Tetsuo Yamada ,  Kenichi Arakawa ,  Nobusuke Sasano

发明人： Miho Kobayashi ,  Tomoaki Iizuka ,  Hideki Motoyama ,  Tetsuo Yamada ,  Kenichi Arakawa ,  Nobusuke Sasano

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/353 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/3722 ,  H04N5/378 ,  H01L29/78 ,  H01L27/14 ,  H01L31/00

CPC分类号： H04N3/1537 ,  H01L27/14831

摘要： Solid-state image sensing device is provided with a synthesizing section for synthesizing odd-field signal charges and even-field signal charges. The synthesizing section is a transfer path formed outside of the photosensitive region or vertical transfer paths formed in the photosensitive region. For the signal charge synthesis through vertical transfer path, after the integration, the signal charges are read simultaneously from the odd-line pixel group and the even-line pixel group. Further, it is possible to select either the method of outputting the odd-field signal charges and the even-field signal charges separately or the method of outputting the synthesized odd- and even-field signal charges.

摘要翻译： 固态摄像装置具有用于合成奇数场信号电荷和偶场信号电荷的合成部。 合成部分是形成在光敏区域中形成的感光区域或垂直传送路径外部的传送路径。 对于通过垂直传输路径的信号电荷合成，积分后，从奇数行像素组和偶数行像素组同时读取信号电荷。 另外，也可以选择分别输出奇数场信号电荷和偶场信号电荷的方法，也可以选择输出合成的奇数和偶数场信号电荷的方法。

公开(公告)号：US5389805A

公开(公告)日：1995-02-14

申请号：US219836

申请日：1994-03-29

申请人： Kenichi Arakawa

发明人： Kenichi Arakawa

IPC分类号： H01L27/148 ,  H01L29/796 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14831

摘要： A solid-state image sensing device comprises: a charge storage layer (12) formed in the vicinity of a surface of a first conductive type semiconductor substrate (11), for transferring incident light into an electric signal photoelectrically and further storing the transferred electric signal as a signal charge temporarily; a transfer channel (14) formed on the surface of the semiconductor substrate, for transferring the signal charge stored in the charge storing layer; a depletion prevention layer (13) formed on the surface of the semiconductor substrate and on the charge storage layer, for preventing interfaces from being depleted; and a barrier layer (16) formed at a position deeper than the transfer channel, for preventing punch through from being generated between the charge storage layer (12) and the transfer channel (14). The barrier layer (16) is formed locally at such a position that a maximum impurity concentration thereof is located at a position deeper than the depletion prevention layer. In the image sensing device, when the junction length between the barrier layer and the depletion prevention layer is shortened for miniaturization, it is possible to prevent the impurity concentration of the transfer channel from being lowered by the barrier layer, so that a drop of the transfer capacity of the transfer channel can be prevented, thus reducing the size of and increasing the number of pixels.

摘要翻译： 一种固态摄像装置，包括：形成在第一导电型半导体衬底（11）的表面附近的电荷存储层（12），用于将入射光光电转换成电信号，并进一步存储所转移的电信号 暂时作为信号充电; 形成在半导体衬底的表面上的用于传送存储在电荷存储层中的信号电荷的转移通道（14） 形成在半导体衬底的表面上和电荷存储层上的用于防止界面耗尽的耗尽防止层（13）; 以及形成在比所述传送通道更深的位置处的阻挡层（16），用于防止在所述电荷存储层（12）和所述传输通道（14）之间产生穿通。 势垒层（16）在其最大杂质浓度位于比耗尽防止层更深的位置的位置处局部形成。 在图像感测装置中，当阻挡层和耗尽层之间的接合长度缩短以便小型化时，可以防止传导通道的杂质浓度被阻挡层降低，从而使 可以防止传送通道的传送容量，从而减小像素的数量和增加数量。