Abstract:
An image sensing apparatus with an image sensor which comprises a plurality of sensors (47) each provided on each of pixel (37) forming a photo-receptive area (36), the sensor generating an electric signal in response to brightness of incident light from a subject; and a plurality of dual-function CCDs (40A-40H) for signal storage and read-out connected to the sensors, respectively, the dual-function CCDs each comprising a plurality of charge storage elements. The dual-function CCDs are of substantially linear shape, elongated over two or more of the pixels, and arranged parallel to each other. During an image sensing process, electric signals generated in the sensors of the pixels are transferred parallel in one direction by the plurality of dual-function CCDs, whereby the electric signals generated in the sensor are stored in the charge storage elements of the dual-function CCDs. During a signal read-out process, the electric signals stored in the charge storage elements of the dual-function CCDs are transferred parallel in the same direction as in the image sensing process, whereby the electric signals are read out of the photo-receptive area.
Abstract:
In a monitor mode, the saturated electric charge amount of a plurality of first, second, third, and fourth types of photoelectric conversion elements disposed in matrix form on a semiconductor substrate is set to one half a saturated electric charge amount during a still mode. In the monitor mode, electric charges stored by two of the four types of photoelectric conversion elements are transferred to vertical CCDs, mixed and vertically transferred to a horizontal CCD. In the still mode, electric charges of one of the four types of photoelectric conversion elements at a time for a 1 V period (where V is a vertical scan period) are transferred to vertical CCDs and vertically transferred to the horizontal CCD. Furthermore, in the still mode, initially, the electric charges in the photoelectric conversion elements are cleared out for 4n * V periods, where n is a positive integer. Thereafter, smear electric charges are swept out from the vertical CCDs during a 1 V period.
Abstract:
A method for driving an interline transfer type CCD imager by reading out a signal charge accumulated in one of first and second light receiving pixels to corresponding one of first and second accumulation regions. Part of the signal charge is transferred to the other one of the first and second accumulation regions which is disposed adjacently to the one of the accumulated regions. Another signal charge accumulated in the other one of the first and second light receiving pixels is read out so as to add the other signal charge to the part of the signal charge. Thereafter, the remaining part of the signal charge is transferred to the adjacent other one of the first and second accumulation regions.
Abstract:
A high definition camera for photographing still pictures using a high resolution charge coupled solid-state imaging device. The imaging device includes a plurality of photoelectric conversion elements arranged in rows and columns, wherein each column is divided into repeating sequences of four photoelectric elements, each element corresponding to a pixel and one of four fields. A plurality of vertical charge transfer paths are formed between each column of the photoelectric elements and a horizontal charge transfer path is connected to a terminal portion of each of the vertical charge transfer paths. The horizontal charge transfer path includes first and second horizontal registers. Pixel signals generated at photoelectric elements corresponding to one of four fields are transferred to transfer elements in a field shift period corresponding to the one field. Thereafter, the signals are transferred toward to the horizontal charge transfer path in accordance with drive signals and are then horizontally transferred by the horizontal charge transfer path at every row to read and store the signals for the one field. The signals of the four fields are stored in respective memory areas of a memory. In an embodiment, signals are read by every frame and the signals of two fields, corresponding to one of the first and second horizontal registers, are supplied to an electronic viewfinder for display. A still image of the displayed image is recorded in accordance with signals of four fields upon actuation of a shutter. In an additional embodiment, both of the horizontal registers are operable to output signals during a high resolution mode and only one of the horizontal registers are operable to output signals during a low resolution mode.
Abstract:
There is disclosed a solid-state imaging device comprising: a column direction transfer section arranged in parallel to photosensitive element trains, and capable of transferring, in column directions opposite to each other, signal charges produced in photosensitive elements; row direction transfer sections arranged on the both end sides of the column direction transfer section, respectively, and at least one transfer order conversion section provided between the row direction transfer section on one side and the column direction transfer section. In this solid-state imaging device, there is employed a scheme such that the transfer direction of the transfer in a column direction (first field transfer) of signal charges produced from photosensitive pixels of the odd rows and the transfer direction of the transfer in a column direction (second field transfer) of signal charges produced from photosensitive pixels of the odd rows are caused to be opposite to each other, and that the transfer order is reversed by the transfer order conversion section on one side to output signal charges in a reversed transfer order. Transfer between row direction transfer devices is therefore not required.
Abstract:
An interline transfer type area image sensor is described which can selectively operate in either an interlaced or non-interlaced read-out mode. The sensor includes a plurality of vertical CCD shift registers. Each shift register has an ion implanted shift transfer barrier or storage regions such that only one layer of gate electrode is required by each voltage clock, and a structure for selectively applying voltages to the clock lines for alternate rows of one or both of the vertical shift register electrodes.
Abstract:
A solid-state image pick-up device is provided which comprises a first group of photosensitive pixels formed on a semiconductor substrate of one conductivity type and arranged in a first two-dimensional matrix form, each of the pixels of the first group inclined by 45.degree. with respect to a horizontal direction; a second group of photosensitive pixels vertically offset from the first group of photosensitive pixels by a distance corresponding to about half a vertical pixel pitch, horizontally offset from the first group of photosensitive pixels by a distance corresponding to a horizontal dimension of each pixel, and having oblique gaps between obliquely adjacent ones of the pixels arranged in the matrix forms, each pixel of the second group being inclined by 45.degree. with respect to the horizontal direction; and a plurality of vertical registers arranged to extend in the oblique gaps and gaps between vertically adjacent ones of the pixels of each of the columns of the pixels.
Abstract:
A method of driving a solid-state image pickup device includes steps of using vertical charge-coupled devices each having a pixel section and a vacant packet section to fetch all the electric charges stored in photoelectric conversion elements to the pixel sections of the vertical charge-coupled devices, feeding vacant packets into the vertical charge-coupled devices from a horizontal charge-coupled device at every N-th row, thereby dispersing the vacant packets while transferring the electric charges to the lowermost row of the vacant packet section, feeding the vacant packets corresponding to one row to the vertical charge-coupled devices from the horizontal charge-coupled device during only a horizontal blanking period of each horizontal period to thereby cause the vacant packets to be transferred upwardly along the vertical charge-coupled devices by M rows (where M
Abstract:
In a CCD type solid state image pickup device including two-dimensionally arranged photo/electro conversion portions, a plurality of vertical shift registers each connected to one column of the photo/electro conversion portions, and a horizontal transfer portion connected to the vertical shift register, signal charges of every four of each column of the photo/electro conversion portions are mixed within the vertical shift registers or within the vertical transfer portions and the horizontal output register, to create a mixed signal charge. Then, the mixed signal charge corresponding to four of the photo/electro conversion portions is transferred within the horizontal output register. Thus, one scanning line is formed by every four rows of the photo/electro conversion portions.
Abstract:
Described is a new high performance CCD image sensor technology which can be used to build a versatile image sensor family with the sensors that have high resolution and high pixel density. The described sensor architectures are based on a new charge super sweep concept which was developed to overcome such common problems as blooming and the image smear. The charge super sweep takes place in very narrow vertical channels located between the photosites similar to the Interline Transfer CCD devices. The difference here is that the charge is never stored in these regions for any significant length of time and is swept out using a new resistive gate traveling wave sweeping technique, The charge super sweep approach also allows the fast charge transfer of several lines of data from the photosites located anywhere in the array into the buffer storage during a single horizontal blanking interval.
Abstract translation:描述了一种新的高性能CCD图像传感器技术,可用于构建具有高分辨率和高像素密度的传感器的通用图像传感器系列。 所描述的传感器架构基于新的充电超扫描概念,其被开发用于克服诸如开花和图像涂片的常见问题。 电荷超扫描发生在位于类似于Interline Transfer CCD器件的光电子之间的非常窄的垂直通道中。 这里的区别在于,在任何相当长的时间内,电荷从不存储在这些区域中,并且使用新的电阻栅极行波扫频技术进行扫描。电荷超扫描方法还允许快速的电荷传输几行数据 在单个水平消隐间隔期间将阵列中的任何位置的照片放入缓冲存储器。