公开(公告)号：US06898255B2

公开(公告)日：2005-05-24

申请号：US09885937

申请日：2001-06-22

申请人： Sang Yeon Kim

发明人： Sang Yeon Kim

IPC分类号： H04N7/24 ,  H03H17/02 ,  H04B1/10

CPC分类号： H03H17/0226

摘要： An apparatus and method for generating finite impulse response (FIR) filter coefficients are presented. The apparatus includes an address generator that multiplies a desired cutoff frequency f by an integer n to generate an address, a first look-up table that generates a sine function value of the address, a divider that divides the sine function value by n*pi, a multiplexer that generates an impulse response function value by selecting one of a value produced from the divider and 2*f based on an outside control signal, and a multiplier that multiplies the impulse response function value by a corresponding window function value to generate an nth filter coefficient for the FIR filter.

摘要翻译： 提出了一种用于产生有限脉冲响应（FIR）滤波器系数的装置和方法。 该装置包括一个地址发生器，其将期望的截止频率f乘以整数n以产生地址，产生地址的正弦函数值的第一查找表，将正弦函数值除以n * pi ，多路复用器，其通过从所述除法器产生的值和基于外部控制信号的2 * f产生脉冲响应函数值;以及乘法器，其将所述脉冲响应函数值乘以相应的窗口函数值，以产生 FIR滤波器的第n个滤波器系数。

公开(公告)号：US06633342B2

公开(公告)日：2003-10-14

申请号：US09759433

申请日：2001-01-12

申请人： Sang Yeon Kim

发明人： Sang Yeon Kim

IPC分类号： H04N521

CPC分类号： H04N5/208 ,  H04N5/213

摘要： An apparatus and method for eliminating noise of a received image and compensating its sharpness is provided. A common circuit is used in a structure for eliminating noise based on a double smoothing method and a structure for making the outline sharp based on an unsharp masking method. Noise elimination and sharpness enhancement are processed for a difference signal between an original signal of the image and its low pass filtered signal, thereby compensating the original signal. Thus, an image having an improved picture quality can be provided in a product which transmits/receives or displays image data, and high competitiveness of the product can be obtained by simplifying the user interface.

摘要翻译： 提供一种用于消除接收图像的噪声并补偿其锐度的装置和方法。 在基于双平滑方法的消除噪声的结构中使用公共电路和基于非锐化掩蔽方法使轮廓清晰的结构。 处理图像的原始信号与其低通滤波信号之间的差分信号的噪声消除和锐度增强，从而补偿原始信号。 因此，可以在发送/接收或显示图像数据的产品中提供具有改善的图像质量的图像，并且可以通过简化用户界面来获得产品的高竞争力。

公开(公告)号：US08854671B2

公开(公告)日：2014-10-07

申请号：US13590797

申请日：2012-08-21

申请人： Sang-yeon Kim ,  In-sung Choi

发明人： Sang-yeon Kim ,  In-sung Choi

IPC分类号： G06F15/00 ,  G06F3/12 ,  G06K1/00

CPC分类号： G06F3/1205 ,  G06F3/1238 ,  G06F3/1253

摘要： A method of setting printing options at a host apparatus using a LINUX-based operation system (OS), the method including displaying at least one printing option providing text input for a user from among printing options provided by an image forming apparatus connected to the host apparatus; receiving setting information regarding printing options selected by a user from among the at least one printing option as text input; and storing the setting information with the corresponding printing options.

摘要翻译： 一种使用基于LINUX的操作系统（OS）在主机设备上设置打印选项的方法，所述方法包括：从由连接到主机的图像形成设备提供的打印选项之中显示提供用户的文本输入的至少一个打印选项 仪器; 从所述至少一个打印选项中接收用户选择的打印选项的设置信息作为文本输入; 并用相应的打印选项存储设置信息。

公开(公告)号：US07665259B2

公开(公告)日：2010-02-23

申请号：US11295296

申请日：2005-12-06

申请人： Young-Ho Yoon ,  Sang-Yeon Kim ,  Su-Jin Lee ,  Hyung-Geun Kim ,  Chang-Shin Lee ,  Soon-Woo Nam ,  Seok-Tae Kang ,  Chang-Nam Lee ,  Sung-Bae Kim

发明人： Young-Ho Yoon ,  Sang-Yeon Kim ,  Su-Jin Lee ,  Hyung-Geun Kim ,  Chang-Shin Lee ,  Soon-Woo Nam ,  Seok-Tae Kang ,  Chang-Nam Lee ,  Sung-Bae Kim

IPC分类号： E04C3/34 ,  E04B1/18

CPC分类号： E04C3/34

摘要： Disclosed herein is a built-up type box-shaped steel column for filling concrete therein, that can be formed easily and economically in a built-up scheme by using ┐-beams and steel plates, and a method for manufacturing the same that includes bonding a steel plate at the inner surface of a ┐-shapes during a process of making a built-up type box-shaped steel column, thereby having a good resistance against a lateral pressure of concrete filled in the steel column and preventing the bonded portion from being exposed to the outside to provide a better outer appearance. The built-up type box-shaped steel column for filling concrete therein, includes: a ┐-shapes disposed at each of the four corners of a box-shaped steel column to be formed; and a steel plate disposed between the ┐-shapes adjacent to each other for connecting the ┐-shapes with each other.

摘要翻译： 本发明公开了一种用于在其中填充混凝土的积层型箱形钢柱，其可以通过使用桁梁和钢板在组合方案中容易且经济地形成，及其制造方法包括粘结 在制造叠层型箱形钢柱的过程中，在内表面具有┐形的钢板，从而对填充在钢柱中的混凝土的侧向压力具有良好的抵抗力，并防止粘结部分 暴露在外面以提供更好的外观。 用于在其中填充混凝土的积层型箱形钢柱包括：设置在要形成的箱形钢柱的四个角中的每一个的┐形状; 以及设置在彼此相邻的┐形之间的钢板，用于将┐形彼此连接。

公开(公告)号：US07259071B2

公开(公告)日：2007-08-21

申请号：US10973852

申请日：2004-10-25

申请人： Inki Kim ,  Sang Yeon Kim ,  Min Paek ,  Chiew Sin Ping ,  Wan Gie Lee ,  Choong Shiau Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

发明人： Inki Kim ,  Sang Yeon Kim ,  Min Paek ,  Chiew Sin Ping ,  Wan Gie Lee ,  Choong Shiau Chien ,  Zadig Lam ,  Hitomi Watanabe ,  Naoto Inoue

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/823462 ,  H01L21/823481 ,  Y10S438/981

摘要： A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.

摘要翻译： 制造具有第一有源区和第二有源区的半导体器件的方法包括提供在衬底上限定第一有源区的第一和第二隔离结构。 第一有源区域使用第一工作电压，而第二有源区域使用不同于第一电压的第二工作电压。 形成覆盖第一和第二有源区的氮化物层。 形成覆盖氮化物层的氧化物层。 去除覆盖在第一有源区上的氧化物层的第一部分以露出氮化物层的第一部分。 使用湿蚀刻方法去除氮化物层的暴露的第一部分，同时留下覆盖第二有源区域的氮化物层的第二部分完好无损。 此后，在第一有源区上形成具有第一厚度的第一栅极氧化物，第一栅极氧化物具有面对第一隔离结构的第一边缘和面向第二隔离结构的第二边缘。 第一边缘与第一隔离结构隔开第一距离。 第二边缘与第二隔离结构隔开第二距离。 此后，在第二有源区上形成具有第二厚度的第二栅极氧化物，第二厚度不同于第一厚度。

公开(公告)号：US07166901B2

公开(公告)日：2007-01-23

申请号：US10950828

申请日：2004-09-27

申请人： Naoto Inoue ,  Hitomi Sakurai ,  Min Paek ,  Sang Yeon Kim ,  In Ki Kim

发明人： Naoto Inoue ,  Hitomi Sakurai ,  Min Paek ,  Sang Yeon Kim ,  In Ki Kim

IPC分类号： H01L29/00

CPC分类号： H01L27/0921 ,  H01L21/76237 ,  H01L21/823814 ,  H01L21/823878

摘要： A semiconductor device comprises a semiconductor substrate having a high voltage region and a low voltage region, at least a pair of adjacent high voltage MOS transistors disposed on the high voltage region of the semiconductor substrate, and low voltage MOS transistors disposed on the low voltage region of the semiconductor substrate. A first element isolator comprises a first shallow trench disposed on a surface of the low voltage, region of the semiconductor substrate, and a first dielectric embedded in the first shallow trench. A pair of second element isolators comprises two second shallow trenches spaced apart at an interval between a source region or a drain region of the pair of the adjacent high voltage MOS transistors and a source or a drain region of the other of the pair of the adjacent high voltage MOS transistors, and a second dielectric embedded in each of the second shallow trenches. The second shallow trenches are disposed on a surface of the high voltage region of the semiconductor substrate. A channel cut region having a high impurity concentration is disposed on the surface of the substrate between the second shallow trenches.

摘要翻译： 半导体器件包括具有高电压区域和低电压区域的半导体衬底，设置在半导体衬底的高电压区域上的至少一对相邻的高压MOS晶体管和设置在低电压区域上的低压MOS晶体管 的半导体衬底。 第一元件隔离器包括设置在半导体衬底的低电压区域的表面上的第一浅沟槽和嵌入在第一浅沟槽中的第一电介质。 一对第二元件隔离器包括在一对相邻高压MOS晶体管的源极区域或漏极区域之间间隔开的两个第二浅沟槽和一对相邻的高压MOS晶体管中的另一个的源极或漏极区域 高电压MOS晶体管和嵌入在每个第二浅沟槽中的第二电介质。 第二浅沟槽设置在半导体衬底的高压区域的表面上。 具有高杂质浓度的沟道切割区域设置在第二浅沟槽之间的衬底表面上。