公开(公告)号：US06369414B2

公开(公告)日：2002-04-09

申请号：US09451770

申请日：1999-12-01

申请人： Yukiya Kawakami ,  Shigeru Tohyama

发明人： Yukiya Kawakami ,  Shigeru Tohyama

IPC分类号： H01L27768

CPC分类号： H01L27/14812 ,  H01L27/14683

摘要： A charge coupled device has an n-type charge accumulating layer equal to or less than 5 micron in width, and the unit cells suffer from reduction of signal charge accumulated therein and an increased pulse height of a pulse signal for a substrate shutter, wherein at least one p-type local impurity region is formed in such a manner as to form a p-n junction together with the n-type charge accumulating layer and the n-type semiconductor substrate, thereby increasing the amount of signal charge accumulated in each unit cell without sacrifice of the pulse height of the pulse signal for the substrate shutter.

摘要翻译： 电荷耦合器件具有宽度等于或小于5微米的n型电荷累积层，并且单元电池受到其中累积的信号电荷的降低和用于衬底快门的脉冲信号的增加的脉冲高度，其中在 以与n型电荷累积层和n型半导体衬底一起形成pn结的方式形成至少一个p型局部杂质区域，从而增加在每个单元电池中累积的信号电荷量，而不需要 牺牲基板快门脉冲信号的脉冲高度。

公开(公告)号：US6018169A

公开(公告)日：2000-01-25

申请号：US19470

申请日：1998-02-05

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L21/285 ,  H01L21/28 ,  H01L27/146 ,  H01L27/148 ,  H01L31/10

CPC分类号： H01L27/14812 ,  H01L27/14831

摘要： There is provided a solid-state image sensor including a photodetector array in which a plurality of photodetectors are one- or two-dimensionally arranged, each one of the photodetctors including an electrode in a photoelectric conversion region, and transmitting signals when detecting a light passing through the electrode, the solid-state image sensor converting the signals into time sequence electric signals, the electrode being composed of titanium dioxide (TiO.sub.2). The titanium dioxide preferably contains oxygen vacancies or at least one of tungsten (W), phosphorus (P), antimony (Sb), tantalum (Ta), niobium (Nb), indium (In) and oxides thereof (WO.sub.3, P.sub.2 O.sub.5, Sb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Nb.sub.2 O.sub.5, In.sub.2 O.sub.3). The above-mentioned solid-state image sensor provides a high quantum efficiency which would be obtained when transparent, electrically conductive material such as ITO (In.sub.2 O.sub.3 --SnO.sub.2) and tin oxide (SnO.sub.2) is used. In addition, the solid-state image sensor enhances designability and productivity, since it has no limitation in fabrication which would exist when the above-mentioned transparent, electrically conductive material is used.

摘要翻译： 提供了一种固态图像传感器，其包括光电检测器阵列，其中多个光电检测器是一维或二维布置的，每个光电检测器包括光电转换区域中的电极，并且当检测到光通过时发送信号 通过电极，固态图像传感器将信号转换成时间序列电信号，电极由二氧化钛（TiO 2）组成。 二氧化钛优选含有氧空位或钨（W），磷（P），锑（Sb），钽（Ta），铌（Nb），铟（In）及其氧化物（WO3，P2O5，Sb2O5）中的至少一种 ，Ta2O5，Nb2O5，In2O3）。 上述固态图像传感器提供了当使用诸如ITO（In2O3-SnO2）和氧化锡（SnO2）的透明导电材料时可获得的高量子效率。 此外，固态图像传感器增强了设计性和生产率，因为当使用上述透明导电材料时，其将不存在限制。

公开(公告)号：US5907767A

公开(公告)日：1999-05-25

申请号：US872740

申请日：1997-06-11

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L27/146 ,  H01L21/76 ,  H01L27/148 ,  H01L31/04

CPC分类号： H01L27/148 ,  Y10S438/96

摘要： Disclosed is a backside-illuminated charge-coupled device imager, which has: a silicon substrate which includes a light-receiving region which is formed on the frontside of the silicon substrate and includes charge-coupled devices which are arranged one-dimensionally or two-dimensionally and has a thickness equal to or less than a pixel pitch, wherein light is supplied from the backside of the silicon substrate; wherein the light-receiving region of the silicon substrate is provided with a silicon layer with a thickness equal to or less than the pixel pitch and a silicon dioxide (SiO.sub.2) layer thicker than the silicon layer.

摘要翻译： 公开了背面照明的电荷耦合器件成像器，其具有：硅衬底，其包括形成在硅衬底的前侧上的光接收区域，并且包括一维或二维布置的电荷耦合器件， 并且具有等于或小于像素间距的厚度，其中从硅衬底的背面提供光; 其中所述硅衬底的光接收区域设置有厚度等于或小于所述像素间距的硅层和比所述硅层厚的二氧化硅（SiO 2）层。

公开(公告)号：US4875084A

公开(公告)日：1989-10-17

申请号：US174464

申请日：1988-03-28

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L31/0264 ,  H01L27/146 ,  H01L27/148 ,  H01L31/10

CPC分类号： H01L27/14649 ,  H01L27/1464 ,  H01L27/14806 ,  Y10S257/914

摘要： For precise selection of a cut-off wavelength of an incident light, there is disclosed an optoelectric transducer operative to produce an electric charges on the basis of an incident light, comprising, (a) a carrier injected region with a first conductivity type formed of a non-degenerative semiconductor material and having a surface capable of being illuminated by the incident light, (b) a potential-barrier region, a first homojunction being formed between the carrier injected region and the potential-barrier region, and (c) a photoelectric converting region with the first conductivity type formed of a degenerative semiconductor material, a second homojunction being formed between the potential-barrier region and the photoelectric converting region, wherein a potential barrier is formed at the second homojunction between the potential-barrier region and the photoelectric converting region, so that it is possible to form the potential-barrier with a arbitrary height by selecting the two semiconductor materials for the potential-barrier region and the photoelectric converting region.

摘要翻译： 为了准确地选择入射光的截止波长，公开了一种光电传感器，其可操作以基于入射光产生电荷，所述光电换能器包括：（a）具有第一导电类型的载流子注入区域，所述第一导电类型由 一种非退化性半导体材料，具有能够被入射光照射的表面，（b）势垒区域，形成在载流子注入区域和势垒区域之间的第一同态结构，（c） 具有由退化半导体材料形成的第一导电类型的光电转换区域，在势垒区域和光电转换区域之间形成第二同态结构，其中在势垒区域和第二同态结构之间形成势垒， 光电转换区域，从而可以通过选择tw来形成任意高度的势垒 o用于势垒区域和光电转换区域的半导体材料。