公开(公告)号：US08101914B2

公开(公告)日：2012-01-24

申请号：US12412708

申请日：2009-03-27

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： G01J5/00 ,  G01J5/20

CPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/08 ,  G01J5/0853

摘要： A thermal-type infrared solid-state imaging device comprises a infrared detector having at least a substrate provided with an integrated circuit for reading out a signal, a diaphragm for detecting a temperature change by absorbing infrared rays, and a support section for supporting the diaphragm above a surface of one side of the substrate with space in between, and includes an eaves section connected to a connection area provided in the vicinity of outer circumference of the diaphragm and covering at least components other than the diaphragm across a space and transmitting the heat generated by absorbing incident infrared rays to the diaphragm, wherein the eaves section has the thickness of a first region covering the components other than the diaphragm across a space thicker than the thicknesses of a second region contacting the connection area of the diaphragm and a third region rising upward in mid air from the diaphragm.

摘要翻译： 一种热式红外固体摄像装置，其特征在于，具备至少具有读取信号用集成电路的基板的红外线检测器，吸收红外线的温度变化检测用隔膜以及支撑所述隔膜 在其间具有空间的基板的一侧的表面之上，并且包括连接到设置在隔膜的外周附近的连接区域的檐部，并且至少覆盖横跨空间的隔膜以外的部件，并传递热量 通过将入射的红外线吸收到所述隔膜而产生，其中所述檐部具有覆盖除了所述隔膜以外的部件的第一区域的厚度，所述第一区域的厚度超过与所述隔膜的连接区域接触的第二区域的厚度， 在空气中从隔膜上升。

公开(公告)号：US20050116169A1

公开(公告)日：2005-06-02

申请号：US10960052

申请日：2004-10-08

申请人： Shigeru Tohyama ,  Seiji Kurashina

发明人： Shigeru Tohyama ,  Seiji Kurashina

IPC分类号： H01L27/14 ,  G01J5/20 ,  H01L37/00 ,  G01J5/00

CPC分类号： G01J5/20

摘要： A thermal-type infra-red ray solid-state image sensor includes at least one device for detecting infra-red ray, wherein the device is comprised of a substrate including a signal-reading circuit, a contact electrode formed on the substrate and electrically connected to the signal-reading circuit, a diaphragm spaced away from and above the substrate, a support supporting the diaphragm such that the diaphragm floats above the substrate, and being composed of electrically conductive material to electrically connect the contact electrode to the diaphragm, and a hood formed on the diaphragm for preventing infra-red ray from being radiated to the support, absorbing the infra-red ray, and transferring heat resulted from the thus absorbed infra-red ray, to the diaphragm. The hood is comprised of a sidewall standing on the diaphragm, and an upper plate extending inwardly of the sidewall from an upper edge of the sidewall, the upper plate being formed with an opening.

摘要翻译： 一种热式红外线固态图像传感器包括至少一个用于检测红外线的装置，其中该装置包括一基板，该基板包括信号读取电路，形成在该基板上的接触电极并电连接 信号读取电路，与基板隔开间隔开的隔膜，支撑隔膜的支撑件，使得隔膜浮在基板上方，并且由导电材料构成，以将接触电极电连接到隔膜;以及 罩形成在隔膜上，用于防止红外线辐射到支架上，吸收红外线，并将由此吸收的红外线产生的热传递到隔膜。 所述罩由侧壁，其位于所述隔膜上，以及从所述侧壁的上边缘向所述侧壁向内延伸的上板，所述上板形成有开口。

公开(公告)号：US5858811A

公开(公告)日：1999-01-12

申请号：US779644

申请日：1997-01-15

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L29/762 ,  H01L21/339

CPC分类号： H01L29/66954 ,  Y10S438/981

摘要： The method for fabricating a charge coupled device disclosed includes the steps of forming a gate oxide film and forming a transfer electrode. The provisional oxide film is formed on a semiconductor substrate, and the provisional oxide film at a transfer electrode formation region is selectively etched away. The transfer electrode from a polycrystalline silicon film on the gate oxide film of the transfer electrode formation region is selectively formed, and the provisional oxide film between transfer electrodes is etched away. Since the oxide film which protects the silicon substrate surface (oxide film/silicon interface) of the second layer transfer electrode formation region during the patterning of the first layer polycrystalline film and the insulating oxide film which covers the first layer transfer electrode surface, is formed in the two-step oxidation process, it is possible to adjust the thicknesses of the two oxide films as desired.

摘要翻译： 公开的电荷耦合器件的制造方法包括形成栅极氧化膜并形成转移电极的步骤。 临时氧化物膜形成在半导体衬底上，并且选择性地蚀刻掉转移电极形成区域的临时氧化膜。 选择性地形成从转移电极形成区域的栅极氧化膜上的多晶硅膜的转移电极，并且转移电极之间的临时氧化膜被蚀刻掉。 由于形成在第一层多晶膜和覆盖第一层转移电极表面的绝缘氧化膜的图案化期间保护第二层转移电极形成区域的硅衬底表面（氧化物膜/硅界面）的氧化物膜， 在两步氧化工艺中，可以根据需要调节两个氧化膜的厚度。

公开(公告)号：US5852321A

公开(公告)日：1998-12-22

申请号：US810138

申请日：1997-02-25

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L27/14 ,  G01J1/02 ,  H01L37/02 ,  H01L31/058

CPC分类号： H01L37/02

摘要： A thermal type infrared radiation solid state image pick-up device includes a temperature-electrical signal converting function element and a heat isolation structural body supporting the temperature-electrical signal converting function element. The heat isolation structural body is formed of a silicon oxide or a silicon nitride in porous structure. Since the heat isolation structural body has porous structure, heat flowing out from the heat isolation structural body depends on an actual area derived by subtracting the area of the holes from the area of the cross-section of the leg (nominal cross section). On the other hand, the mechanical strength of the heat isolation structural body relies on the area of the cross section of the leg. Therefore, for obtaining the photo sensitivity equivalent to that of the conventional heat isolation structural body, the cross sectional area of the leg can be made greater to improve mechanical strength thereof.

摘要翻译： 热式红外辐射固态摄像装置包括温度 - 电信号转换功能元件和支持温度 - 电信号转换功能元件的隔热结构体。 隔热结构体由多孔结构中的氧化硅或氮化硅形成。 由于隔热结构体具有多孔结构，所以从隔热结构体流出的热量取决于从腿部横截面的区域（标称截面）减去孔的面积而得到的实际面积。 另一方面，隔热结构体的机械强度依赖于腿部横截面的面积。 因此，为了获得与传统隔热结构体相当的感光度，可以使腿部的横截面面积更大，以提高其机械强度。

公开(公告)号：US5710447A

公开(公告)日：1998-01-20

申请号：US549435

申请日：1995-10-27

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L27/146 ,  H01L27/148 ,  H01L31/108 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/3728 ,  H01L31/07

CPC分类号： H01L31/108 ,  H01L27/14812

摘要： Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impurity region which is selectively formed on the surface of a P(or N)-type semiconductor region at the surface of a semiconductor substrate, a CCD register for executing electronic scanning which is disposed in parallel to the row of photosensitive devices, and a read-out gate in which a signal charge is transferred from the photosensitive device to the CCD register, wherein a transparent Schottky electrode is formed on the first N(or P)-type impurity region except a portion adjacent to the read-out gate region, the Schottky electrode is electrically connected to a P.sup.+ (or N.sup.+)-type element separating region which surrounds the first N(or P)-type impurity region and has a Schottky barrier that is determined such that a diffusion potential between the Schottky electrode and the first N(or P)-type impurity region is lower than a diffusion potential between the first N(or P)-type impurity region and the P(or N)-type semiconductor region.

摘要翻译： 公开了一种固态图像装置，其具有彼此平行设置的多个感光单元，每个感光单元包括一排多个感光装置，每个感光装置包括第一N（或P）型杂质区 其被选择性地形成在半导体衬底的表面上的P（或N）型半导体区域的表面上，用于执行与该行感光器件平行布置的电子扫描的CCD寄存器和读出 信号电荷从感光器件转移到CCD寄存器的栅极，其中透明肖特基电极形成在第一N（或P）型杂质区域上，除了与读出栅极区域相邻的部分，肖特基 电极电连接到围绕第一N（或P）型杂质区域的P +（或N +）型元件分离区域，并具有肖特基势垒，其被确定为使得扩散电位 肖特基电极和第一N（或P）型杂质区之间的扩散电位低于第一N（或P）型杂质区和P（或N）型半导体区之间的扩散电位。

公开(公告)号：US5537146A

公开(公告)日：1996-07-16

申请号：US359862

申请日：1994-12-20

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H04N5/33 ,  H04N3/14

CPC分类号： H01L27/14812 ,  H04N5/33

摘要： An inter-line, back-illuminated, solid state imaging device having a large active area. Metal signal lines providing driving signals to gate electrodes of vertical CCD shift-registers are disposed in front of radiation sensors. The metal signal lines can serve as metal mirrors for increasing the amount of usable radiation. At the gap portion of the metal signal lines, a second metal mirror can be provided. Alternatively, the dimension of the gap is smaller than the lowest wavelength of the band wavelength of the radiation to be detected. When a metal mirror is provided separately form the metal signal line group, the metal mirror can serve as a shield of the photoelectric conversion layer from the driving signal.

摘要翻译： 具有大的有效面积的线间背面照明的固态成像装置。 向垂直CCD移位寄存器的栅电极提供驱动信号的金属信号线设置在辐射传感器的前面。 金属信号线可以用作用于增加可用辐射量的金属镜。 在金属信号线的间隙部分，可以设置第二金属镜。 或者，间隙的尺寸小于待检测的辐射的波段的波长的最低波长。 当从金属信号线组分开设置金属镜时，金属反射镜可用作光电转换层与驱动信号的屏蔽。

公开(公告)号：US07541583B2

公开(公告)日：2009-06-02

申请号：US11723142

申请日：2007-03-16

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： G01J5/00

CPC分类号： G01J5/10 ,  G01J5/20

摘要： An infrared detecting apparatus includes: a substrate; an infrared detector which detects infrared radiation; a first supporting member which extends between the infrared detector and the substrate, and which supports the infrared detector apart from the substrate; a second supporting member which extends between the infrared detector and the substrate, and which supports the infrared detector apart from the substrate; and a plurality of wirings which extend between the infrared detector and the substrate, and which are all provided to the first supporting member.

摘要翻译： 红外线检测装置包括：基板; 检测红外辐射的红外检测器; 第一支撑构件，其在红外检测器和衬底之间延伸，并且将红外检测器与衬底支撑; 第二支撑构件，其在所述红外检测器和所述衬底之间延伸，并且所述第二支撑构件支撑所述红外检测器与所述衬底分离; 以及在红外线检测器和基板之间延伸并且全部设置在第一支撑构件上的多条布线。

公开(公告)号：US5598016A

公开(公告)日：1997-01-28

申请号：US358015

申请日：1994-12-16

申请人： Akihito Tanabe ,  Shigeru Tohyama

发明人： Akihito Tanabe ,  Shigeru Tohyama

IPC分类号： H01L27/14 ,  H01L27/148 ,  H01L31/0232 ,  H01L31/10 ,  H01L31/108

CPC分类号： H01L31/0232 ,  H01L27/14806 ,  H01L31/108

摘要： Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance. Optically optimum thickness is assured by individually forming the reflecting plate which optimizes optical properties represented by the absorption of the incident light, and the transparent electrode used for increasing the photodiode capacitance, and also applying a pulse voltage to the transparent electrode at a given timing in such a manner that the potential at the time of resetting of the photodiode potential is lower than that obtained when the charge is accumulated.

摘要翻译： 公开了一种光电二极管电容增加的光电转换装置。 在反射板和构成CCD图像传感器的整体像素的光电二极管之间形成透明电极。 它形成为光从后表面入射，并且光的驻波的环到达铂硅化物膜，从而实现入射光的有效吸收。 透明电极形成在与铂硅化物膜相反的反射板和光电二极管之间。 透明电极和硅化铂膜之间的电容可用作光电二极管电容。 通过分别形成优化由入射光的吸收表示的光学特性的反射板和用于增加光电二极管电容的透明电极，并且在给定的定时向透明电极施加脉冲电压来确保光学最佳厚度 使得光电二极管电位复位时的电位低于电荷累积时的电位。

公开(公告)号：US08796630B2

公开(公告)日：2014-08-05

申请号：US13429283

申请日：2012-03-23

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： G01J5/12 ,  G01J5/02 ,  H01L31/18

CPC分类号： G01J5/12 ,  G01J5/024 ,  G01J2005/068 ,  H01L27/1467 ,  H01L31/1876

摘要： In the reference element employed in the thermal-type infrared solid-state image sensing device according to the present invention, a slit used for construction of a light receiving element is opened in insulating films between which a thermoelectric conversion element is tucked to such an extent that the slit pierces into the sacrifice layer; a film made of electrically conductive material covering the light receiving section and the slit is provided and a protective film is provided thereon, and the film made of electrically conductive material and the protective film enter the interior of the slit along a side wall of the slit, whereby a void is left in the interior of the slit. As a result, residual stresses of the insulating films are kept equal in the light receiving element and the reference element, and thereby, the light blocking effect and the heat transfer effect are improved.

摘要翻译： 在本发明的热式红外线固体摄像装置中使用的基准元件中，用于构成光接收元件的狭缝在热电转换元件被卷起的绝缘膜上开放， 裂缝刺入牺牲层; 设置覆盖光接收部分和狭缝的由导电材料制成的膜，并且在其上设置保护膜，并且由导电材料制成的膜和保护膜沿狭缝的侧壁进入狭缝的内部 ，由此在狭缝的内部留下空隙。 结果，绝缘膜的残余应力在光接收元件和参考元件中保持相等，从而提高了遮光效果和传热效果。

公开(公告)号：US20110198720A1

公开(公告)日：2011-08-18

申请号：US13123939

申请日：2009-10-06

申请人： Shigeru Tohyama

发明人： Shigeru Tohyama

IPC分类号： H01L31/101 ,  H01L27/14

CPC分类号： H01L27/14649 ,  G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/20

摘要： A thermal-type infrared solid-state imaging element is provided with a pixel having a diaphragm (1), a substrate, and a pair of supporting sections which support the diaphragm (1) by being spaced apart from the substrate. The supporting section has a first supporting section (2) on the same level as the diaphragm (1), and a second supporting section (3) on a level between the diaphragm (1) and the substrate. The second supporting section (3) is composed of a beam (4) having one or more bending points (8), a first contact section (5) on one end portion of the beam (4), and a second contact section (6) on the other end portion of the beam (4). The beam (4) and the second contact section (6) of the second supporting section (3) of each pixel exist underneath the diaphragm (1) of another pixel.

摘要翻译： 热型红外固体摄像元件设有具有隔膜（1），基板和一对支撑部分的像素，该支撑部分通过与基板间隔开来支撑隔膜（1）。 支撑部分具有与隔膜（1）相同水平面的第一支撑部分（2）和在隔膜（1）和基板之间的水平面上的第二支撑部分（3）。 第二支撑部分（3）由具有一个或多个弯曲点（8）的梁（4），梁（1）的一个端部上的第一接触部分（5）和第二接触部分 ）在光束（4）的另一端部分上。 每个像素的第二支撑部分（3）的光束（4）和第二接触部分（6）存在于另一像素的光阑（1）的下方。