公开(公告)号：US20090180508A1

公开(公告)日：2009-07-16

申请号：US12269583

申请日：2008-11-12

Applicant: Kouji MAKITA ,  Takayuki Kashima

Inventor： Kouji MAKITA ,  Takayuki Kashima

IPC: H01S5/00 ,  H01L21/00

CPC classification number: H01S5/4031 ,  B82Y20/00 ,  H01S5/162 ,  H01S5/2004 ,  H01S5/2201 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4087 ,  H01S2301/185

Abstract: A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.

Abstract translation: 双波长半导体激光器件包括：第一半导体激光器件，包括第一导电型第一包层，由AlGaAs混晶构成的第一引导层;具有由AlGaAs混晶构成的阻挡层的第一量子阱有源层; 由AlGaAs混晶构成的第二引导层和第二导电型第二覆层，以及包括第一导电型第三覆层，由AlGaInP混晶构成的第三引导层的第二半导体激光器件，第二量子阱活性 具有由AlGaInP混晶构成的阻挡层的层，由AlGaInP混晶构成的第四引导层和第二导电型第四覆层。 至少包含在第一量子阱活性层，第一引导层和第二引导层中的阻挡层各自具有大于0.47和0.60或更小的Al摩尔比。

公开(公告)号：US20070064752A1

公开(公告)日：2007-03-22

申请号：US11501064

申请日：2006-08-09

Applicant: Toru Takayama ,  Isao Kidoguchi ,  Takayuki Kashima

Inventor： Toru Takayama ,  Isao Kidoguchi ,  Takayuki Kashima

IPC: H01S3/10

CPC classification number: H01S5/40 ,  H01S5/162 ,  H01S5/22 ,  H01S5/4087

Abstract: Semiconductor lasers for respective wavelengths have window regions with different lengths so as to obtain optimum FFPs for emitted light of the respective wavelengths, and thus dependence on optical output can be equal between the wavelengths, facilitating the design of an optical system.

Abstract translation: 用于各波长的半导体激光器具有不同长度的窗口区域，以获得用于各个波长的发射光的最佳FFP，因此对波长的依赖性可以相等于波长，从而有助于光学系统的设计。

公开(公告)号：US4876433A

公开(公告)日：1989-10-24

申请号：US213140

申请日：1988-06-29

Applicant: Takayuki Kashima ,  Akira Sakabe ,  Yoshifumi Yamanaka

Inventor： Takayuki Kashima ,  Akira Sakabe ,  Yoshifumi Yamanaka

IPC: B23K9/10

CPC classification number: B23K9/1056

Abstract: An arc welding power source supplies a high voltage for the reignition of an arc after the polarity reversal of a welding current to prevent the destruction of circuit elements and ensure the stable and positive polarity reversal despite its reduced size, and also the occurrence of a spike voltage in a main circuit during the polarity reversal of a large current or alternatively the welding current during the polarity reversal is controlled to suppress a spike voltage during the current reversal.

Abstract translation: 电弧焊电源在焊接电流的极性反转之后提供高电压用于电弧的重新点火，以防止电路元件的破坏，并确保稳定和正极性反转，尽管其尺寸减小，并且还发生尖峰 在大电流的极性反转期间主电路中的电压或者极性反转期间的焊接电流被控制以在电流反转期间抑制尖峰电压。

公开(公告)号：US20110135609A1

公开(公告)日：2011-06-09

申请号：US13058366

申请日：2009-08-11

Applicant: Satoshi Araki ,  Munekazu Ogawa ,  Takayuki Kashima

Inventor： Satoshi Araki ,  Munekazu Ogawa ,  Takayuki Kashima

IPC: A01N63/04 ,  C12N1/14 ,  A01P7/04 ,  A01P7/02

CPC classification number: C12R1/645 ,  A01N63/04

Abstract: A microbial pesticide which is safe for the environment, fast-acting and excellent in an insecticidal effect in case of spray treatment for eggs and larvae of a pest is required. The invention provides a method for controlling at least one pest selected from the group consisting of whiteflies, aphid, spider mites, thrips, rust mites, leaf miners, pyralidae, cabbage moths and longhorn beetles, with Lecanicillium muscarium strain V-5 (deposition number: FERM BP-11135); and a microbial pesticide comprising the strain.

Abstract translation: 需要对环境安全的微生物杀虫剂，对于有害生物的卵和幼虫进行喷雾处理时，其作用速度快，杀虫效果优异。 本发明提供一种控制至少一种害虫的方法，所述害虫选自粉虱，蚜虫，蜘蛛螨，蓟马，铁锈螨，叶螨，螟蛾科，白菜蛾和长角甲虫，其具有Lecanicillium muscarium菌株V-5（保藏号 ：FERM BP-11135）; 和包含该菌株的微生物农药。

公开(公告)号：US20090086782A1

公开(公告)日：2009-04-02

申请号：US12235320

申请日：2008-09-22

Applicant: Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

Inventor： Takeshi YOKOYAMA ,  Takayuki KASHIMA ,  Kouji MAKITA

IPC: H01S5/026 ,  H01S5/20 ,  H01L21/02

CPC classification number: H01S5/162 ,  B82Y20/00 ,  H01S5/028 ,  H01S5/0281 ,  H01S5/32316 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/4031 ,  H01S5/4087

Abstract: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film. In the semiconductor laser device provided with a high-output dual-wavelength lasers that are formed monolithically, the decrease of the COD level during the high-output operation of the laser can be suppressed.

Abstract translation: 在作为半导体基板1的一个主面的一部分的第一区域上，形成第一半导体激光结构体10，具有第一下部包层3，具有第一量子阱结构的第一有源层4和第一 上覆层5,7，其从半导体衬底侧依次层叠，从而形成第一谐振器。 在与第一区域不同的第二区域上形成第二半导体激光器结构20，以具有第二下部包层13，具有第二量子阱结构的第二有源层14和第二上部包层15， 17，其按顺序分层，从而形成第二谐振器。 端面涂膜31,32形成在第一和第二谐振器的小面上，并且在第一和第二谐振器的小面和小面涂膜之间形成含氮层30。 在具有单片形成的高输出双波长激光器的半导体激光装置中，能够抑制激光器的高输出运转时的COD电平的降低。